In one form, a method of manufacturing a circuit device comprises providing a lead frame comprising a plurality of leads, each comprising an island portion, a bonding portion elevated from the island portion, a slope portion extending obliquely so as to connect the island portion and the bonding portion, and a lead portion extending from the bonding portion. First and second transistors and first and second diodes are mounted upper surfaces of island portions of respective first and second leads, and are connected to the respective leads through wirings that connect the transistors and diodes to the bonding portions of the respective leads. Lower surfaces of the island portions are attached to an upper surface of a circuit board, and the circuit board, the transistors, the diodes, and the lead frame are encapsulated by a resin, so that the lead portions are not covered by the resin.

In one form, a method of manufacturing a circuit device comprises providing a lead frame comprising a plurality of leads, each comprising an island portion, a bonding portion elevated from the island portion, a slope portion extending obliquely so as to connect the island portion and the bonding portion, and a lead portion extending from the bonding portion. First and second transistors and first and second diodes are mounted upper surfaces of island portions of respective first and second leads, and are connected to the respective leads through wirings that connect the transistors and diodes to the bonding portions of the respective leads. Lower surfaces of the island portions are attached to an upper surface of a circuit board, and the circuit board, the transistors, the diodes, and the lead frame are encapsulated by a resin, so that the lead portions are not covered by the resin.

There is provided a copper bonding wire having an improved storage life in the atmosphere. There is specifically provided a copper bonding wire for semiconductor devices characterized in that a density of crystal grain boundary on a surface of the wire is 0.6 (μm/μm.sup.2) or more and 1.6 (μm/μm.sup.2) or less.

There is provided a copper bonding wire having an improved storage life in the atmosphere. There is specifically provided a copper bonding wire for semiconductor devices characterized in that a density of crystal grain boundary on a surface of the wire is 0.6 (μm/μm.sup.2) or more and 1.6 (μm/μm.sup.2) or less.

A semiconductor device includes first semiconductor chips that each include a first control electrode and a first output electrode, second semiconductor chips each include a second control electrode and a second output electrode, first and second input circuit patterns on which the first and second input electrodes are disposed, respectively, first and second control circuit patterns electrically connected to the first and second control electrodes, respectively, first and second resistive elements, and a first inter-board wiring member. The first control electrodes and first resistive element are electrically connected via the first control circuit pattern, the second control electrodes and second resistive element are electrically connected via the second control circuit pattern, and at least one of the first output electrodes and at least one of the second output electrodes are electrically connected to each other via the first inter-board wiring member.

A semiconductor device includes first semiconductor chips that each include a first control electrode and a first output electrode, second semiconductor chips each include a second control electrode and a second output electrode, first and second input circuit patterns on which the first and second input electrodes are disposed, respectively, first and second control circuit patterns electrically connected to the first and second control electrodes, respectively, first and second resistive elements, and a first inter-board wiring member. The first control electrodes and first resistive element are electrically connected via the first control circuit pattern, the second control electrodes and second resistive element are electrically connected via the second control circuit pattern, and at least one of the first output electrodes and at least one of the second output electrodes are electrically connected to each other via the first inter-board wiring member.

A semiconductor device includes first and second conductive parts, a first bonding wire connecting the first and second conductive parts and having a non-flat portion between opposite ends thereof so that a portion between the opposite ends is away from the first and second conductive parts, a case having a housing space to accommodate the first and second conductive parts, including a sidewall having first to fourth lateral faces surrounding the housing space to form a rectangular shape in a plan view, and a cover disposed on the sidewall, a sealing member filling the case to seal the first bonding wire, and a first stress relaxer for relieving a stress in the first bonding wire. The first bonding wire extends from the second lateral face toward the fourth lateral face, and the first stress relaxer is positioned between the first bonding wire and the first lateral face.

A semiconductor device includes first and second conductive parts, a first bonding wire connecting the first and second conductive parts and having a non-flat portion between opposite ends thereof so that a portion between the opposite ends is away from the first and second conductive parts, a case having a housing space to accommodate the first and second conductive parts, including a sidewall having first to fourth lateral faces surrounding the housing space to form a rectangular shape in a plan view, and a cover disposed on the sidewall, a sealing member filling the case to seal the first bonding wire, and a first stress relaxer for relieving a stress in the first bonding wire. The first bonding wire extends from the second lateral face toward the fourth lateral face, and the first stress relaxer is positioned between the first bonding wire and the first lateral face.

A switching power device comprises a device lead-frame. Gates, Kelvin sources and a drain are formed on the device lead-frame, the gates and the Kelvin sources are arranged at one end of the device lead-frame, and the drain is arranged at the other end of the device lead-frame; and two gates and two Kelvin sources are provided. One end of the device lead-frame is sequentially provided with the gate, the Kelvin source, the Kelvin source and the gate, so as to form a symmetrical pin structure.

A switching power device comprises a device lead-frame. Gates, Kelvin sources and a drain are formed on the device lead-frame, the gates and the Kelvin sources are arranged at one end of the device lead-frame, and the drain is arranged at the other end of the device lead-frame; and two gates and two Kelvin sources are provided. One end of the device lead-frame is sequentially provided with the gate, the Kelvin source, the Kelvin source and the gate, so as to form a symmetrical pin structure.