Reliability of a semiconductor device is improved. A slope is provided on a side face of an interconnection trench in sectional view in an interconnection width direction of a redistribution layer. The maximum opening width of the interconnection trench in the interconnection width direction is larger than the maximum interconnection width of the redistribution layer in the interconnection width direction, and the interconnection trench is provided so as to encapsulate the redistribution layer in plan view.

A semiconductor package and a method of forming the same are disclosed. A method of forming a semiconductor package includes the following operations. A polymer layer is formed over a die. A metal feature is formed in the polymer layer. An argon-containing plasma treatment is performed to the polymer layer and the metal feature.

A semiconductor structure and a method of forming the same are disclosed. A method of forming a semiconductor structure includes the following operations. An insulating layer is formed over a substrate. A metal feature is formed in the insulating layer. An argon-containing plasma treatment is performed to the insulating layer and the metal feature.

To provide an interlayer filler composition capable of forming a cured adhesive layer sufficiently cured and excellent in adhesion without letting voids be formed in the cured adhesive layer while minimizing leak out of a filler. An interlayer filler composition for a semiconductor device, comprises an epoxy resin (A), a curing agent (B), a filler (C) and a flux (D), has a minimum value of its viscosity at from 100 to 150° C. and satisfies the following formulae (1) and (2) simultaneously:

10<η50/η120<500   (1)

1,000<η150/η120   (2)

(wherein η50, η120 and η150 represent the viscosities at 50° C., 120° C. and 150° C., respectively, of the interlayer filler composition).

Techniques for packaging an integrated circuit include attaching a die to a conductive layer before forming dielectric layers on an opposing surface of the conductive layer. The conductive layer may first be formed on a carrier substrate before the die is disposed on the conductive layer. The die may be electrically coupled to the conductive layer via wires or solder bumps. The carrier substrate is removed before the dielectric layers are formed. The dielectric layers may collectively form a coreless package substrate for the integrated circuit package.

A semiconductor device includes a substrate, a pad disposed on the substrate, a passivation disposed over the substrate, a post passivation interconnection (PPI) disposed over the passivation and the substrate, a conductive line isolated from the PPI, a bump disposed on the PPI and a polymeric composite between the PPI and the conductive line, wherein the polymeric composite includes a first layer conformal to the conductive line and PPI and a second layer filling a gap between the PPI and the conductive line. Further, a method of manufacturing a semiconductor device includes providing a substrate, disposing a passivation over the substrate, forming a post passivation interconnect (PPI) and a conductive line over the passivation, disposing a bump on the PPI, and forming a polymeric composite over the PPI by disposing a first layer conformal to the PPI and the conductive line and disposing a second layer to fill a gap between the PPI and the conductive line.

A semiconductor package and a method of forming the same are disclosed. A method of forming a semiconductor package includes the following operations. A polymer layer is formed over a die. A metal feature is formed in the polymer layer. An argon-containing plasma treatment is performed to the polymer layer and the metal feature.

A semiconductor package and a method of forming the same are disclosed. A method of forming a semiconductor package includes the following operations. A polymer layer is formed over a die. A metal feature is formed in the polymer layer. An argon-containing plasma treatment is performed to the polymer layer and the metal feature.

A flip chip bonding method includes obtaining a die including a first substrate and an adhesive layer on the first substrate; bonding the die to a second substrate different from the first substrate; and curing the adhesive layer. The curing the adhesive layer includes heating the second substrate to melt the adhesive layer, and providing the adhesive layer and the second substrate with air having pressure greater than atmospheric pressure.

A semiconductor package and a method of forming the same are disclosed. A method of forming a semiconductor package includes the following operations. A polymer layer is formed over a die. A metal feature is formed in the polymer layer. An argon-containing plasma treatment is performed to the polymer layer and the metal feature.