H01L31/02

SOLAR CELL MODULE AND METHOD FOR OPERATING A SOLAR CELL MODULE
20230046616 · 2023-02-16 ·

A solar cell module and a method for operating a solar cell module. The solar cell module includes a plurality of strings which are each formed from a plurality of solar cells connected to one another in a series circuit, wherein each string is connected to a bypass circuit assigned thereto. The solar cell module is also characterized in that the bypass circuit has a switching element and is configured to reduce an electrical current inside the string by switching the switching element when a return current occurs within the associated string.

LIGHT RECEIVING MODULE
20230051355 · 2023-02-16 · ·

A plurality of lead pins (2a-d) penetrates through a stem (1) having a circular shape and includes a signal lead pin (2a,2b). A block (4) is provided on an upper surface of the stem. A waveguide light receiving device (9) is provided on a side surface of the block. An amplifier (6) is provided on the side surface of the block and amplifies an electric signal output from the waveguide light receiving device. A first relay substrate is provided on the upper surface of the stem and arranged between the block and the signal lead pin. A first transmission line (12a,12b) is provided on the first relay substrate. A first wire (10f,10g) connects one end of the first transmission line and an output terminal of the amplifier. A second wire (10h,10i) connects the other end of the first transmission line (12a,12b) and the signal lead pin.

INTEGRATED DETECTION SCHEME FOR FAST BLOOD FLOW MEASUREMENT

Disclosed are various embodiments for integrated diffuse correlation spectroscopy. A first control signal can be sent to a switch to cause an integrator to integrate a current from a photodiode. An integrated current can be received from the integrator, and a data signal can be sent to a computing device based at least in part on the integrated current. A second control signal can be sent to a switch to cause the integrator to cease integrating the current from the photodiode.

PHOTOELECTRIC CONVERSION MODULE

Provided is optical module as a photoelectric conversion module that includes a photoelectric hybrid board, a light-receiving/emitting element, a driving element, and a heat dissipating sheet. The light-receiving/emitting element and the driving element are mounted on one surface in a thickness direction of the photoelectric hybrid board. The heat dissipating sheet is in contact with the light-receiving/emitting element and the driving element from a side opposite to the photoelectric hybrid board. The driving element has a greater height above the photoelectric hybrid board than the light-receiving/emitting element.

PHOTODIODE INTEGRATED WITH CIRCUIT

A sensor chip includes a sensor pixel. The sensor pixel includes an avalanche photodetector. A circuit is adjacent to the avalanche photodetector. The circuit is coupled to the avalanche photodetector. An isolation structure at least partially encloses the circuit and is between the avalanche photodetector and the circuit.

Semiconductor device including an electrically conductive adhesive layer and a bypass diode in a carrier

A solar cell structure is disclosed. The solar cell structure comprises a carrier having a front side and a P-N junction, a solar cell electrically coupled to the front side of the carrier, and an adhesive layer. The adhesive layer bonds the front side of the carrier to the solar cell. The adhesive layer includes conductive particles that electrically couple the carrier to the solar cell.

Electronic IC device comprising integrated optical and electronic circuit component and fabrication method

A first circuit structure of an electronic IC device includes comprises light-sensitive optical circuit components. A second circuit structure of the electronic IC device includes an electronic circuit component and an electrically-conductive layer extending between and at a distance from the optical circuit components and the electronic circuit component. Electrical connections link the optical circuit components and the electronic circuit component. These electrical connections are formed in holes which pass through dielectric layers and the intermediate conductive layer. Electrical insulation rings between the electrical connections and the conductive layer are provided which surround the electrical connections and have a thickness equal to a thickness of the conductive layer.

Safety mechanisms, wake up and shutdown methods in distributed power installations

A distributed power system including multiple DC power sources and multiple power modules. The power modules include inputs coupled respectively to the DC power sources and outputs coupled in series to form a serial string. An inverter is coupled to the serial string. The inverter converts power input from the serial string to output power. A signaling mechanism between the inverter and the power module is adapted for controlling operation of the power modules.

Photo-emitting and/or photo-receiving diode array device

Photo-emitting and/or photo-receiving diode array device, comprising: a stack of first and second semiconductor layers doped according to different types; first trenches passing through the stack and surrounding a region of the stack wherein several diodes are formed; dielectric portions arranged in the first trenches and covering lateral flanks of said region over the entire thickness of the second layer and a first part of the thickness of the first layer; first electrically conductive portions arranged in the first trenches and covering the lateral flanks of said region over a second part of the thickness of the first layer, and forming first electrodes of the diodes of said region; at least one second trench partially passing through the first layer and separating the portions of the first layer from the diodes of said region.

Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors

An integrated circuit structure comprising a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure wherein a regrown gallium nitride material is disposed on the photoconductive semiconductor switch and operatively coupled with the wafer.