A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

A back-contacting solar cell includes: a silicon substrate (1), wherein a shadow face of the silicon substrate (1) is delimited into a first region and a second region (2), and the second region (2) is doped to form a second-charge-carrier collecting end; a metal-chalcogen-compound layer (4), wherein the metal-chalcogen-compound layer (4) is deposited within at least the first region of the silicon substrate (1), and a region of the metal-chalcogen-compound layer (4) that corresponds to the first region forms a first-charge-carrier collecting end; a first electrode (5), wherein the first electrode (5) is correspondingly provided on the first-charge-carrier collecting end; and a second electrode (6), wherein the second electrode (6) is correspondingly provided within a region that corresponds to the second region (2). The collection and transferring of the first charge carrier are realized by using the first-charge-carrier collecting end.

A structure of partial tunnel oxide passivated contact for a photovoltaic cell and a photovoltaic module. The structure comprises: a first tunnel oxide layer disposed on a surface of a cell body, and a first polysilicon film disposed on a surface of the tunnel oxide layer. The surface of the cell body has a region for passivated contact and a region for light absorption, the first tunnel oxide layer is disposed in the region for passivated contact, and a projection of the first polysilicon film on the surface of the cell body is located in the region for passivated contact.

This light absorbing device includes: a light reflecting layer; a dielectric layer disposed on the light reflecting layer; and a plurality of metal nanostructures disposed on the dielectric layer. A portion of each of the plurality of metal nanostructures is buried in the dielectric layer and another portion thereof is exposed to the outside.

Thermophotovoltaic (TPV) systems and devices with improved efficiencies are disclosed herein. In one example, a thermophotovoltaic (TPV) cell includes an active layer; a back-surface reflective (BSR) layer; and a spacer layer positioned between the active layer and back-surface reflective layer.

The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

The present invention relates to a method for producing one or more electrical contacts on a component, comprising the following steps:—providing a component which has a front and a rear, an outer layer of a transparent, electrically conductive oxide (TCO) or a self-passivating metal or semiconductor being present on the front and/or rear;—applying a structured, electrically conductive seed layer, the application of the seed layer taking place non-galvanically;—galvanically depositing at least one metal on the seed layer.

A back contact solar cell string includes: at least two cell pieces, where each cell piece comprises positive electrode regions and negative electrode regions alternately disposed with each other; insulation layers, covering the positive electrode regions on one side of the cell piece and the negative electrode regions on another side of the cell piece; and a first bus bar, connected to two adjacent cell pieces and electrically connected to the positive electrode regions and the negative electrode regions in the two adjacent cell pieces that are not covered by the insulation layers.

A solar cell of an embodiment includes: a substrate; an n-electrode; an n-type layer; a p-type light absorption layer which is a semiconductor of a Cu-based oxide; and a p-electrode. The n-electrode is disposed between the substrate and the n-type layer. The n-type layer is disposed between the n-electrode and the p-type light absorption layer. The p-type light absorption layer is disposed between the n-type layer and the p-electrode. The n-type layer is disposed closer to a light incident side than the p-type light absorption layer. The substrate is a single substrate included in the solar cell.

The present disclosure discloses a low LOI tellurium-lithium-silicon-zirconium frit system and a conductive paste and application thereof, and belongs to the field of conductive paste. In the low LOI tellurium-lithium-silicon-zirconium frit system, components of the frit are 24%-40% TeO.sub.2, 18%-24% Li.sub.2O, 4%-13% SiO.sub.2, 0-2% ZrO.sub.2, and a balance MO.sub.x, and M is one or a mixture of Na, K, Mg, Ca, Sr, Ti, V, Cr, Mo, W, Mn, Cu, Ag, Zn, Cd, B, Al, Ga, Tl, Ge, Pb, P, and Bi. There is no need to add additional surfactants, a viscosity change of the conductive paste prepared after standing for 30 days is less than 20%, the conductive paste has good stability, the water related weight loss of inorganic oxide of the conductive paste is less than 1.6%, and the application performance of the conductive paste is not affected after standing for 30 days.