A solar cell including at least a first layer made of a semiconductor material for absorbing photons from light radiation and releasing charge carriers, and at least one conductive layer, overlapping the first layer, adapted to allow the light radiation to enter into the solar cell towards the first layer and to collect the charge carriers released by the first layer, the solar cell where the conductive layer includes at least three overlapped layers, including a transparent intermediate metal layer, made of metal, and two transparent oxide layers, made of a conductive oxide, where the two oxide layers are an inner oxide layer and an outer oxide layer surrounding the transparent intermediate metal layer to provide a low resistance path for the electrical charges and to maximize the amount of light radiation entering the solar cell. The embodiments also include a solar cells module including said solar cell.

A solar cell of an embodiment includes: a p-electrode in which a first p-electrode and a second p-electrode are laminated; a p-type light-absorbing layer in direct contact with the first p-electrode; an n-type layer in direct contact with the p-type light-absorbing layer; and an n-electrode. The first p-electrode is disposed between the p-type light-absorbing layer and the second p-electrode. The p-type light-absorbing layer is disposed between the n-type layer and the first p-electrode. The n-type layer is disposed between the p-type light-absorbing layer and the n-electrode. The first p-electrode includes a metal oxide containing Sn as a main component.

The present invention relates to a method for producing one or more electrical contacts on a component, comprising the following steps:—providing a component which has a front and a rear, an outer layer of a transparent, electrically conductive oxide (TCO) or a self-passivating metal or semiconductor being present on the front and/or rear;—applying a structured, electrically conductive seed layer, the application of the seed layer taking place non-galvanically;—galvanically depositing at least one metal on the seed layer.

An X-ray device including a sensing panel is provided. The sensing panel includes a first pixel and a second pixel. The second pixel is disposed adjacent to the first pixel in a top view direction. The first pixel includes a first photoelectric conversion layer. The second pixel includes a second photoelectric conversion layer. The first photoelectric conversion layer and the second photoelectric conversion layer belong to different layers.

A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and an n-type layer includes a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode and mainly contains a compound represented by Ga.sub.x1M1.sub.x2M2.sub.x3M3.sub.x4O.sub.x5, the M1 being Al and/or B, the M2 being one or more selected from the group consisting of In, Ti, Zn, Hf, and Zr, the M3 being one or more selected from the group consisting of Sn, Si, and Ge, the x1 and the x5 being more than 0, the x2, the x3, and the x4 being 0 or more, and the x5 when a sum of the x1, the x2, the x3, and the x4 is 2 being 3.0 or more and 3.8 or less, and a second n-type layer which is located between the first n-type layer and the n-electrode and mainly contains a compound represented by Ga.sub.y1M1.sub.y2M2.sub.y3M3.sub.y4O.sub.y5, the y1 and the y5 being more than 0, the y2, the y3, and the y4 being 0 or more, and the y5 when a sum of the y1, the y2, the y3, and the y4 is 2 being 3.0 or more and 3.8 or less, or a first n-type region which is located between the p-type light-absorbing layer and the n-electrode and mainly contains a compound represented by Ga.sub.x1M1.sub.x2M2.sub.x3M3.sub.x4O.sub.x5, the M1 being Al and/or B, the M2 being one or more selected from the group consisting of In, Ti, Zn, Hf, and Zr, the M3 being one or more selected from the group consisting of Sn, Si, and Ge, the x1 and the x5 being more than 0, the x2, the x3, and the x4 being 0 or more, and the x5 when a sum of the x1, the x2, the x3, and the x4 is 2 being 3.0 or more and 3.8 or less, and a second n-type region which is located between the first n-type region and the n-electrode and mainly contains a compound represented by Ga.sub.y1M1.sub.y2M2.sub.y3M3.sub.y4O.sub.y5, the y1 and the y5 being more than 0, the y2, the y3, and the y4 being 0 or more, and the y5 when a sum of the y1, the y2, the y3, and the y4 is 2 being 3.0 or more and 3.8 or less, wherein (x2+x3) is larger than (y2+y3).

An infrared photodiode includes a first electrode including a reflective layer, a second electrode facing the first electrode, and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes an infrared absorbing material. A maximum absorption wavelength of the infrared absorbing material in a solution state is greater than about 700 nm and less than or equal to about 950 nm. The infrared photodiode is configured to exhibit an external quantum efficiency (EQE) spectrum in a wavelength region of greater than or equal to about 1000 nm.

An integrated tandem solar cell includes a first solar cell including a rear electrode, a light absorption layer disposed on the rear electrode, and a buffer layer disposed on the light absorption layer; a recombination layer including a first transparent conductive layer disposed on the buffer layer; a nanoparticle layer that is transparent and conductive, that is disposed on the first transparent conductive layer, and that planarizes the first solar cell; and a second transparent conductive layer disposed on the nanoparticle layer; and a second solar cell that is a perovskite solar cell including a perovskite layer and that is disposed on and bonded to the second transparent conductive layer of the recombination layer. The recombination layer electrically joins the first and second solar cells and planarizes the first solar cell so that the second solar cell is uniformly deposited in all regions thereof.

A transparent photovoltaic device includes a transparent substrate, a transparent bottom electrode coupled to the transparent substrate, an active layer coupled to the transparent bottom electrode, and a transparent multilayer top electrode. The transparent multilayer top electrode includes a seed layer deposited on the active layer, a first metal layer deposited on the seed layer, an interconnect layer deposited on the first metal layer, and a second metal layer deposited on the interconnect layer. The transparent photovoltaic device is characterized by an average visible transmission (AVT) greater than 25% and a top electrode sheet resistance that is less than 100 Ohm/sq.

Disclosed are an array substrate and a preparation method thereof, and a digital microfluidic chip. The preparation method includes: forming a plurality of photoelectric detection devices on a silicon-based substrate; transferring the photoelectric detection devices to a base substrate by adopting a micro transfer printing process; and forming a plurality of transparent driving electrodes on the base substrate, wherein the transparent driving electrodes are insulated from the photoelectric detection devices.

An electrode structure including a top electrode and a bottom electrode located below the top electrode. The top electrode includes a plurality of inner electrodes and an outer electrode connected with the inner electrodes. The inner electrodes are configured to filter a light by wavelength range and filter the light into a polarized light. The inner electrodes extend along a first direction. Each of the inner electrodes includes a metal structure having a first portion and a second portion and a dielectric structure located between the first portion and the second portion of the metal structure. The first portion, the dielectric structure, and the second portion are arranged along a second direction perpendicular to the first direction.