To provide an imaging device that suppresses reflection of incident light still more effectively and has excellent sensitivity characteristics. This imaging device includes a semiconductor substrate and a photoelectric conversion section. The semiconductor substrate includes a multi-stepped recess in which a plurality of respective holes defined by first outlines having substantially polygonal shapes is continuous in a thickness direction. The substantially polygonal shapes extend along a first surface orthogonal to the thickness direction and are different from each other in size in a plan view taken along the thickness direction. The photoelectric conversion section generates electric charge through photoelectric conversion. The photoelectric conversion section is defined by a second outline including a portion inclined with respect to the first outlines of the holes in a plan view. The electric charge corresponds to an amount of incident light passing through the multi-stepped recess.

There is provided a semiconductor film that includes an aggregate of semiconductor quantum dots that contain a Pb atom, and a ligand that is coordinated to the semiconductor quantum dot, in which a ratio of the number of Pb atoms having a valence of 1 or less to the number of Pb atoms having a valence of 2 is 0.20 or less. There are also provided a photodetector element, an image sensor, and a manufacturing method for a semiconductor film.

A light detector includes a substrate, a membrane disposed on a surface of the substrate, a first and a second electrode post supporting the membrane. The first electrode post includes a first main body portion having a tubular shape spreading from a first electrode pad toward a side opposite to the substrate, and a first flange portion provided in an end portion at the side opposite to the substrate in the first main body portion. The first flange portion is provided with a first sloped surface inclined so as to approach the substrate as it goes away from the first main body portion. A first wiring layer reaches an inner surface of the first main body portion through the first sloped surface. The second electrode post and the second wiring layer are formed similarly to the first electrode post and the first wiring layer.

A light detector includes a substrate, a membrane disposed on a surface of the substrate, a first and a second electrode post supporting the membrane. The first electrode post includes a first main body portion having a tubular shape spreading from a first electrode pad toward a side opposite to the substrate, and a first flange portion provided in an end portion at the side opposite to the substrate in the first main body portion. The first flange portion is provided with a first sloped surface inclined so as to approach the substrate as it goes away from the first main body portion. A first wiring layer reaches an inner surface of the first main body portion through the first sloped surface. The second electrode post and the second wiring layer are formed similarly to the first electrode post and the first wiring layer.

Disclosed are a solar cell apparatus and a method for fabricating the same. The solace cell apparatus according to the embodiment includes a solar cell formed on a support substrate; a polymer adhesive layer including photo-curable polymer on the solar cell; and a protective panel on the polymer adhesive layer.

A light detector includes: a substrate; and a membrane which is supported on a surface of the substrate so that a space is formed between the surface of the substrate and the membrane, in which the membrane includes a first wiring layer and a second wiring layer which are opposite each other with a gap extending along a line having a curved portion interposed therebetween and a resistance layer which is electrically connected to each of the first wiring layer and the second wiring layer and has an electric resistance depending on a temperature, and in which a first edge portion at the side of the line in the first wiring layer and a second edge portion at the side of the line in the second wiring layer respectively continuously extend.

A semiconductor device includes a substrate, a first insulation layer formed on the substrate in a first region, a photon absorption seed layer formed on the first insulation layer in the first region and on the substrate in a second region separate from the first region, and a photon absorption layer formed on the photon absorption seed layer in the first region. The photon absorption seed layer has a particular structure that may assist in reducing dislocation density in a region that includes a photon absorption layer.

The present disclosure relates to a composition that includes a first layer that includes a perovskite defined by ABX.sub.3 and a second layer that includes a perovskite-like material defined by at least one of A′.sub.2B′X′.sub.4, A′.sub.3B′.sub.2X′.sub.9, A′B′X′.sub.4, A′.sub.2B′X′.sub.6, and/or A′.sub.2AB′.sub.2X′.sub.7, where the first layer is adjacent to the second layer, A is a first cation, B is a second cation, X is a first anion, A′ is a third cation, B′ is a fourth cation, X′ is a second anion, and A′ is different than A.

A solar cell and preparation method. The solar cell includes silicon substrate having first or second polarity, where the substrate includes first and second sides opposite to each other; first passivation structure on first side of the substrate, a portion of first structure farthest from the substrate having first polarity and a position where first structure is located being first electrode region; second passivation structure on a side of first structure away from the substrate, a portion of second structure farthest from the substrate having second polarity and a position where second structure is located being second electrode region, second and first electrode regions are not overlapped and second structure has a process temperature lower than first structure; and first electrode in first region on a side of second structure away from the substrate and second electrode in second region on a side of second structure away from the substrate.

A Mie photo sensor is described. A Mie photo sensor is configured to leverage Mie scattering to implement a photo sensor having a resonance. The resonance is based on various physical and material properties of the Mie photo sensor. In an example, a Mie photo sensor includes a layer of semiconductor material with one or more mesas. Each mesa of semiconductor material may include a scattering center. The scattering center is formed by the semiconductor material of the mesa being at least partially surround by a material with a different refractive index than the semiconductor material. The abutting refractive index materials create an interface that forms a scattering center and localizes the generation of free carriers during Mie resonance. One or more electrical contacts may be made to the mesa to measure the electrical properties of the mesa.