A method for manufacturing a solar cell module, the method includes a cell forming operation for forming a first solar cell and a second solar cell by, for each of the first and second solar cells, attaching a first auxiliary electrode and a second auxiliary electrode to a back surface of a semiconductor substrate on which a plurality of first electrodes and a plurality of second electrodes are formed; and a cell string forming operation for connecting the first auxiliary electrode of the first solar cell to the second auxiliary electrode of the second solar cell through an interconnector to form a cell string.

A photovoltaic solar structure comprises at least two electrically connected solar cell regions forming a shade management block. The solar cell regions have a light receiving frontside and a passivated backside opposite the light receiving frontside and a first metallization over the passivated backside has base and emitter metallization contacting base and emitter regions of the solar cell regions. An electrically insulating backplane is over the backsides of the two solar cells regions. The electrically insulating backplane covers the first metallization of the two solar cell regions. A second metallization is over the electrically insulating backplane and contacts the first metallization through the electrically insulating backplane. The second metallization has at least an opposite polarity electrical connection electrically connecting the solar cell regions of the shade management block. The opposite polarity connection has positive and negative electrical polarities. The opposite polarity electrical connection is connected to a bypass diode.

A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

Method of manufacturing a single-side-contacted photovoltaic device (1), comprising the steps of: a) providing a photovoltaically-active substrate (3) defining a plurality of alternating hole collecting zones (3a) and electron collecting zones (3b) arranged in parallel strips; b) depositing a conductive layer (5) across said zones; c) depositing at least one conductive track (9) extending along at least part of each of said zones (3a, 3b); d) selectively forming a dielectric layer (7) on each of said zones (3a, 3b), so as to leave an exposed area free of dielectric at an interface between adjacent zones (3a, 3b); e) etching said conductive layer (5) in said exposed areas; f) applying a plurality of interconnecting conductors (11a, 11b) so as to electrically interconnect at least a portion of said hole collecting zones (3a) with each other, and to electrically interconnect at least a portion of said electron collecting zones (3b) with each other.

The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

The disclosure provides a solar cell and a back contact structure thereof, a photovoltaic module, and a photovoltaic system. The back contact structure includes a first doped region having an opposite polarity to a silicon substrate and a second doped region having a same polarity as the silicon substrate. An isolation region is arranged between the first doped region and the second doped region. The protective region arranged on the first doped region includes an insulation layer and a third doped layer having a same polarity as the second doped region. An opening is provided in the protective region to connect the first conductive layer to the first doped region. In the present invention, scratches caused by belt transmission in an existing cell fabrication process is resolved.

A back contact solar cell string includes: at least two cell pieces, where each cell piece comprises positive electrode regions and negative electrode regions alternately disposed with each other; insulation layers, covering the positive electrode regions on one side of the cell piece and the negative electrode regions on another side of the cell piece; and a first bus bar, connected to two adjacent cell pieces and electrically connected to the positive electrode regions and the negative electrode regions in the two adjacent cell pieces that are not covered by the insulation layers.

A solar cell including a semiconductor substrate having a first conductivity type an emitter region, having a second conductivity type opposite to the first conductivity type, on a first main surface of the semiconductor substrate an emitter electrode which is in contact with the emitter region a base region having the first conductivity type a base electrode which is in contact with the base region and an insulator film for preventing an electrical short-circuit between the emitter region and the base region, wherein the insulator film is made of a polyimide, and the insulator film has a C.sub.6H.sub.11O.sub.2 detection count number of 100 or less when the insulator film is irradiated with Bi.sub.5.sup.++ ions with an acceleration voltage of 30 kV and an ion current of 0.2 pA by a TOF-SIMS method. The solar cell can have excellent weather resistance and high photoelectric conversion characteristics.

A back contact structure of a solar cell, includes: a silicon substrate, the silicon substrate including a back surface including a plurality of recesses disposed at intervals; a plurality of first conductive regions and a plurality of second conductive regions disposed alternately in the plurality of recesses, where each first conductive region includes a first dielectric layer and a first doped region which are disposed successively in the plurality of recesses, and each second conductive region includes a second doped region; a second dielectric layer disposed between the plurality of first conductive regions and the plurality of second conductive regions; and a conductive layer disposed on the plurality of first conductive regions and the plurality of second conductive regions.

A solar cell module is discussed. The solar cell module includes a plurality of solar cells each including a semiconductor substrate and a plurality of first electrodes and a plurality of second electrodes, which are formed on a back surface of the semiconductor substrate and are separated from each other, the plurality of solar cells disposed in a first direction; a plurality of first conductive lines connected to the plurality of first electrodes included in a first solar cell of the plurality of solar cells, and the plurality of first conductive lines extended in the first direction; a plurality of second conductive lines connected to the plurality of second electrodes included in a second solar cell of the plurality of solar cells which is adjacent to the first solar cell, and the plurality of second conductive lines extended in the first direction.