Semitransparent chalcogen solar cells and techniques for fabrication thereof are provided. In one aspect, a method of forming a solar cell includes: forming a first transparent contact on a substrate; depositing an n-type layer on the first transparent contact; depositing a p-type chalcogen absorber layer on the n-type layer, wherein a p-n junction is formed between the p-type chalcogen absorber layer and the n-type layer; depositing a protective interlayer onto the p-type chalcogen absorber layer, wherein the protective interlayer fully covers the p-type chalcogen absorber layer; and forming a second transparent contact on the interlayer, wherein the interlayer being disposed between the p-type chalcogen absorber layer and the second transparent contact serves to protect the p-n junction during the forming of the second transparent contact. Solar cells and other methods for formation thereof are also provided.

Semitransparent chalcogen solar cells and techniques for fabrication thereof are provided. In one aspect, a method of forming a solar cell includes: forming a first transparent contact on a substrate; depositing an n-type layer on the first transparent contact; depositing a p-type chalcogen absorber layer on the n-type layer, wherein a p-n junction is formed between the p-type chalcogen absorber layer and the n-type layer; depositing a protective interlayer onto the p-type chalcogen absorber layer, wherein the protective interlayer fully covers the p-type chalcogen absorber layer; and forming a second transparent contact on the interlayer, wherein the interlayer being disposed between the p-type chalcogen absorber layer and the second transparent contact serves to protect the p-n junction during the forming of the second transparent contact. Solar cells and other methods for formation thereof are also provided.

An integrated tandem solar cell includes a first solar cell including a rear electrode, a light absorption layer disposed on the rear electrode, and a buffer layer disposed on the light absorption layer; a recombination layer including a first transparent conductive layer disposed on the buffer layer; a nanoparticle layer that is transparent and conductive, that is disposed on the first transparent conductive layer, and that planarizes the first solar cell; and a second transparent conductive layer disposed on the nanoparticle layer; and a second solar cell that is a perovskite solar cell including a perovskite layer and that is disposed on and bonded to the second transparent conductive layer of the recombination layer. The recombination layer electrically joins the first and second solar cells and planarizes the first solar cell so that the second solar cell is uniformly deposited in all regions thereof.

An integrated tandem solar cell includes a first solar cell including a rear electrode, a light absorption layer disposed on the rear electrode, and a buffer layer disposed on the light absorption layer; a recombination layer including a first transparent conductive layer disposed on the buffer layer; a nanoparticle layer that is transparent and conductive, that is disposed on the first transparent conductive layer, and that planarizes the first solar cell; and a second transparent conductive layer disposed on the nanoparticle layer; and a second solar cell that is a perovskite solar cell including a perovskite layer and that is disposed on and bonded to the second transparent conductive layer of the recombination layer. The recombination layer electrically joins the first and second solar cells and planarizes the first solar cell so that the second solar cell is uniformly deposited in all regions thereof.

A photovoltaic cell can include a nitrogen-containing metal layer in contact with a semiconductor layer.

A photovoltaic cell can include a nitrogen-containing metal layer in contact with a semiconductor layer.

A method for manufacturing a stacked thin film of an embodiment includes forming a p-electrode on a substrate, forming a film that mainly contains a cuprous oxide and/or a complex oxide of cuprous oxides on the p-electrode, and performing an oxidation treatment on the film that mainly contains the cuprous oxide and/or the complex oxide of cuprous oxides. An ozone partial pressure in the oxidation treatment is 5 [Pa] or more and 200 [Pa] or less, a treatment temperature in the oxidation treatment is 273 [K] or more and 323 [K] or less, and a treatment time in the oxidation treatment is 1 second or more and 60 minutes or less.

A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.

A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.

A method of forming a photovoltaic product with a plurality of photovoltaic cells is disclosed. The method comprises depositing a stack with first and second electrode layers (12, 16) and a photovoltaic layer (14) arranged in between. The method comprises partitioning the stack. The partitioning includes forming a trench (20) extending through the second electrode layer and the photovoltaic layer to expose the first electrode layer. The stack is first irradiated with a laser beam with a first spotsize and with a first wavelength for which the photovoltaic layer has a relatively high absorption coefficient as compared to that of the second electrode layer. The stack is then irradiated with a second laser beam with a second spotsize, greater than the first spotsize, and with a second wavelength for which the photovoltaic layer has a relatively low absorption coefficient as compared to that of the second electrode layer.