In an example, a wireless gamma and or hard X-ray radiation detector includes a bulk semiconductor crystal, electrical contacts, a bias circuit, and a terahertz (THz) electromagnetic (EM) wave receiver. The bulk semiconductor crystal and includes indium antimonide (InSb), cadmium telluride (CdTe), or cadmium zinc telluride (CdZnTe). The electrical contacts are coupled to two facets of the bulk semiconductor crystal. The bias circuit is electrically coupled to the bulk semiconductor crystal through the electrical contacts. The THz EM wave receiver is positioned to detect THz radiation emitted by the bulk semiconductor crystal.

A radiation detector includes a halide semiconductor sandwiched a cathode and an anode and a buffer layer between the halide semiconductor and the anode. The anode comprises a composition selected from: (a) an electrically conducting inorganic-oxide composition, (b) an electrically conducting organic composition, and (c) an organic-inorganic hybrid composition. The buffer layer comprises a composition selected from: (a) a composition distinct from the composition of the anode and including at least one other electrically conducting inorganic-oxide composition, electrically conducting organic composition, or organic-inorganic hybrid composition; (b) a semi-insulating layer selected from: (i) a polymer-based composition; (ii) a perovskite-based composition; (iii) an oxide-semiconductor composition; (iv) a polycrystalline halide semiconductor; (v) a carbide, nitride, phosphide, or sulfide semiconductor; and (vi) a group II-VI or III-V semiconductor; and (c) a component metal of the halide-semiconductor.

The present disclosure provides a photosensitive device, including: a photosensitive layer (1) formed by stacking a plurality of fillers, each of the fillers being a uniformly distributed nanopore structure, the nanopore structure being filled with gaseous selenium; a first electrode (2) provided on a light incident side of the photosensitive layer (1); and a second electrode (3) provided on a light exit side of the photosensitive layer (1). The present disclosure further provides an X-ray detector and a display device.

A detector may be provided with an array of sensing elements. The detector may include a semiconductor substrate including the array, and a circuit configured to count a number of charged particles incident on the detector. The circuit of the detector may be configured to process outputs from the plurality of sensing elements and increment a counter in response to a charged particle arrival event on a sensing element of the array. Various counting modes may be used. Counting may be based on energy ranges. Numbers of charged particles may be counted at a certain energy range and an overflow flag may be set when overflow is encountered in a sensing element. The circuit may be configured to determine a time stamp of respective charged particle arrival events occurring at each sensing element. Size of the sensing element may be determined based on criteria for enabling charged particle counting.

Disclosed herein is a radiation detector comprising: a substrate of an intrinsic semiconductor; a semiconductor single crystal in a recess in the substrate, the semiconductor single crystal having a different composition from the intrinsic semiconductor; a first electrical contact in electrical contact with the semiconductor single crystal; a second electrical contact on or in the substrate, and surrounding the first electrical contact or the semiconductor single crystal, wherein the second electrical contact is electrically isolated from the semiconductor single crystal; wherein the radiation detector is configured to absorb radiation particles incident on the semiconductor single crystal and to generate charge carriers.

Disclosed herein is a method, comprising: forming a radiation absorption layer comprising a layer of SiC on a semiconductor substrate; forming a first electric contacts on a first surface of the radiation absorption layer; bonding the radiation absorption layer with an electronics layer; removing the semiconductor substrate; forming a second electric contacts on a second surface of the radiation absorption layer distal from the electronics layer.

A detector includes a substrate including a matrix of aramid nanofibers, a distribution of nanoparticles across the matrix of aramid nanofibers, and a plurality of organic capping ligands. Each organic capping ligand of the plurality of organic capping ligands bonds a respective nanoparticle of the plurality of nanoparticles to a respective aramid nanofiber of the matrix of aramid nanofibers. The detector further includes first and second electrodes disposed along opposite sides of the substrate to capture charges generated by photons or particles incident upon the detector. Each nanoparticle of the plurality of nanoparticles has a semiconductor composition.

A detector for electromagnetic radiation includes: a first, pixelated electrode layer having a plurality of electrode pixels; a first layer including a plurality of tiles, the plurality of tiles including a material absorbing and converting the electromagnetic radiation, wherein at least edges of tiles facing another tile have been cut using pulsed laser cutting; and a second electrode layer.

In an example, a wireless gamma and or hard X-ray radiation detector includes a bulk semiconductor crystal, electrical contacts, a bias circuit, and a terahertz (THz) electromagnetic (EM) wave receiver. The bulk semiconductor crystal and includes indium antimonide (InSb), cadmium telluride (CdTe), or cadmium zinc telluride (CdZnTe). The electrical contacts are coupled to two facets of the bulk semiconductor crystal. The bias circuit is electrically coupled to the bulk semiconductor crystal through the electrical contacts. The THz EM wave receiver is positioned to detect THz radiation emitted by the bulk semiconductor crystal.

In a described example, an apparatus includes: a photon detector array with a first signal output pad coupled to a photon detector array pixel; a die carrier comprising a readout integrated circuit (ROIC) die and a conductor layer having conductors that couple a first signal input pad on the conductor layer to an input signal lead of the ROIC die; and the first signal output pad coupled to the first signal input pad.