The present embodiment relates to a radiation detector having a structure enabling suppression of polarization in a thallium bromide crystalline body and suppression of corrosion of an electrode in the air. The radiation detector comprises a first electrode, a second electrode, and a thallium bromide crystalline body provided between the first and second electrodes. One of the first and the second electrodes includes an alloy layer and a low-resistance metal layer provide on the alloy layer. The alloy layer is comprised of an alloy of metallic thallium and another metal different from the metallic thallium. The low-resistance metal layer has a resistance value lower than a resistance value of the alloy layer and is electrically connected to a pad on a readout circuit while the radiation detector is mounted on the readout circuit.

Provided is a field shaping multi-well photomultiplier and method for fabrication thereof. The photomultiplier includes a field-shaping multi-well avalanche detector, including a lower insulator, an a-Se photoconductive layer and an upper insulator. The a-Se photoconductive layer is positioned between the lower insulator and the upper insulator. A light interaction region, an avalanche region, and a collection region are provided along a length of the photomultiplier, and the light interaction region and the collection region are positioned on opposite sides of the avalanche region.

This thin film is a thin film for detecting circularly polarized light, and includes a plurality of inorganic layers constituting a layered structure and/or a plurality of inorganic chains constituting a chain structure, which are formed of a perovskite type substance, and chiral molecules incorporated in at least a part of a boundary part between the adjacent inorganic layers and/or between the inorganic chains, wherein the chiral molecules include only one of S-form chiral molecules and R-form chiral molecules or chiral molecules with a higher abundance proportion of one of S-form chiral molecules and R-form chiral molecules than an abundance proportion of the other of S-form chiral molecules and R-form chiral molecules, and wherein the crystal structure of the perovskite type substance is oriented in a predetermined direction.

This thin film is a thin film for detecting circularly polarized light, and includes a plurality of inorganic layers constituting a layered structure and/or a plurality of inorganic chains constituting a chain structure, which are formed of a perovskite type substance, and chiral molecules incorporated in at least a part of a boundary part between the adjacent inorganic layers and/or between the inorganic chains, wherein the chiral molecules include only one of S-form chiral molecules and R-form chiral molecules or chiral molecules with a higher abundance proportion of one of S-form chiral molecules and R-form chiral molecules than an abundance proportion of the other of S-form chiral molecules and R-form chiral molecules, and wherein the crystal structure of the perovskite type substance is oriented in a predetermined direction.

An electrical device includes at least one graphene quantum capacitance varactor. In some examples, the graphene quantum capacitance varactor includes an insulator layer, a graphene layer disposed on the insulator layer, a dielectric layer disposed on the graphene layer, a gate electrode formed on the dielectric layer, and at least one contact electrode disposed on the graphene layer and making electrical contact with the graphene layer. In other examples, the graphene quantum capacitance varactor includes an insulator layer, a gate electrode recessed in the insulator layer, a dielectric layer formed on the gate electrode, a graphene layer formed on the dielectric layer, wherein the graphene layer comprises an exposed surface opposite the dielectric layer, and at least one contact electrode formed on the graphene layer and making electrical contact with the graphene layer.

An X-ray device including a sensing panel is provided. The sensing panel includes a first pixel and a second pixel. The second pixel is disposed adjacent to the first pixel in a top view direction. The first pixel includes a first photoelectric conversion layer. The second pixel includes a second photoelectric conversion layer. The first photoelectric conversion layer and the second photoelectric conversion layer belong to different layers.

A neutron beam detecting device according to the invention includes: a first solar cell-type detector that is provided with, on a surface thereof, a conversion film for converting neutrons into photons or any charged particle beam among alpha particles, protons, lithium nuclei, gamma rays or beta rays, and generates a current in response to incident radiation; a radiation detector that generates a current insensitive to neutrons as an output signal in response to the radiation incident; a current measuring device that detects, as signals, the current generated by the first solar cell-type detector and the current generated by the radiation detector in response to the incident radiation; and a flux calculating unit that compares the current signals from the detectors which are detected by the current measuring device. The flux calculating unit associates the detected current signals from the solar cell-type detector and the radiation detector with a relation between a flux of incident radiation of a predetermined type obtained in advance and the detected currents from the solar cell-type detector and the radiation detector, and calculates a flux of a neutron beam.

An antenna electrode including a first electrode that includes a core and a first conductive surface; a second electrode that includes a second conductive surface; and an electrical tunnel junction between the first conductive surface and the second conductive surface, the tunnel junction having a gap width greater than about 0.1 nm and less than about 10 nm.

An antenna electrode including a first electrode that includes a core and a first conductive surface; a second electrode that includes a second conductive surface; and an electrical tunnel junction between the first conductive surface and the second conductive surface, the tunnel junction having a gap width greater than about 0.1 nm and less than about 10 nm.

A radiation imaging apparatus comprising a first scintillator, a second scintillator which receives radiation transmitted through the first scintillator, conversion elements and a controller is provided. The conversion elements include first conversion elements and second conversion elements with different sensitivities for detecting light emitted from at least one of the first scintillator or the second scintillator. During radiation irradiation, the controller obtains, from a signal output from one or more measuring element configured to measure a dose of incident radiation, a first signal corresponding to light converted from radiation by the second scintillator, and outputs, based on the first signal, a stop signal configured to stop the radiation irradiation, and after the radiation irradiation, the controller causes the first conversion elements and the second conversion elements to output signals configured to generate an energy subtraction image.