Provided are a solar cell, a manufacturing method thereof, and a photovoltaic module. The solar cell includes: a semiconductor substrate, in which a rear surface of the semiconductor substrate having a first texture structure, the first texture structure includes two or more first substructures at least partially stacked on one another, and in a direction away from the rear surface and perpendicular to the rear surface, a distance between a top surface of an outermost first substructure and a top surface of an adjacent first substructure being less than or equal to 2 μm; a first passivation layer located on a front surface of the semiconductor substrate; a tunnel oxide layer located on the first texture structure; a doped conductive layer located on a surface of the tunnel oxide layer; and a second passivation layer located on a surface of the doped conductive layer.

A semiconductor device comprises a substrate, one or more first III-semiconductor layers, and a plurality of superlattice structures between the substrate and the one or more first layers. The plurality of superlattice structures comprises an initial superlattice structure and one or more further superlattice structures between the initial superlattice structure and the one or more first layers. The plurality of superlattice structures is configured such that a strain-thickness product of semiconductor layer pairs in each superlattice structure of the one or more further superlattice structures is greater than or equal to a strain-thickness product of semiconductor layer pairs in superlattice structure(s) of the plurality of superlattice structures between that superlattice structure and the substrate. The plurality of superlattice structures is also configured such that a strain-thickness product of semiconductor layer pairs in at least one of the one or more further superlattice structures is greater than a strain-thickness product of semiconductor layer pairs in the initial superlattice structure.

A solar module lifting apparatus includes a base supported on the ground, a cylinder module including cylinder units disposed on the base and changing in height by contracting and stretching, and a rotary supply plate having one side supporting a solar module and the other side coupled to the cylinder module and moving up and down the solar module by operation of the cylinder module, in which the rotary supply plate includes a first hinge and a second hinge spaced apart from each other on the other side, the cylinder module includes a first cylinder unit and a second cylinder unit of which the upper ends are coupled to the first hinge and the second hinge by shafts, respectively, and at least one of the height and the inclination of the rotary supply plate is adjusted by contracting or stretching of the first cylinder unit and the second cylinder unit.

A solar module lifting apparatus includes a base supported on the ground, a cylinder module including cylinder units disposed on the base and changing in height by contracting and stretching, and a rotary supply plate having one side supporting a solar module and the other side coupled to the cylinder module and moving up and down the solar module by operation of the cylinder module, in which the rotary supply plate includes a first hinge and a second hinge spaced apart from each other on the other side, the cylinder module includes a first cylinder unit and a second cylinder unit of which the upper ends are coupled to the first hinge and the second hinge by shafts, respectively, and at least one of the height and the inclination of the rotary supply plate is adjusted by contracting or stretching of the first cylinder unit and the second cylinder unit.

Provided are a solar cell, a manufacturing method thereof, and a photovoltaic module. The solar cell includes: a semiconductor substrate, in which a rear surface of the semiconductor substrate having a first texture structure, the first texture structure includes two or more first substructures at least partially stacked on one another, and in a direction away from the rear surface and perpendicular to the rear surface, a distance between a top surface of an outermost first substructure and a top surface of an adjacent first substructure being less than or equal to 2μm; a first passivation layer located on a front surface of the semiconductor substrate; a tunnel oxide layer located on the first texture structure; a doped conductive layer located on a surface of the tunnel oxide layer; and a second passivation layer located on a surface of the doped conductive layer.

A solar cell structure is disclosed. The solar cell structure comprises a carrier having a front side and a P-N junction, a solar cell electrically coupled to the front side of the carrier, and an adhesive layer. The adhesive layer bonds the front side of the carrier to the solar cell. The adhesive layer includes conductive particles that electrically couple the carrier to the solar cell.

Disclosed is a method of facilitating straining of a semiconductor element (331) for semiconductor fabrication. In a described embodiment, the method comprises: providing a base layer (320) with the semiconductor element (331) arranged on a first base portion (321) of the base layer (320), the semiconductor element (331) being subjected to a strain relating to a characteristic of the first base portion (321); and adjusting the characteristic of the first base portion (321) to facilitate straining of the semiconductor element (331).

A semiconductor structure includes a group IV substrate and a patterned group III-V device over the group IV substrate. Precursor stacks having at least one precursor metal are situated over at least one portion of the patterned group III-V device. A blanket dielectric layer is situated over the patterned group III-V device. Contact holes in the blanket dielectric layer are situated over each precursor stack. A filler metal is situated in each contact hole and over each precursor stack. The patterned group III-V device can be optically and/or electrically connected to group IV devices in the group IV substrate. Additional contact holes in the blanket dielectric layer can be situated over the group IV devices and filled with the filler metals.

The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: at least one vertical pillar feature within a trench; a photosensitive semiconductor material extending laterally from sidewalls of the at least one vertical pillar feature; and a contact electrically connecting to the photosensitive semiconductor material.

Photo-emitting and/or photo-receiving diode array device, comprising: a stack of first and second semiconductor layers doped according to different types; first trenches passing through the stack and surrounding a region of the stack wherein several diodes are formed; dielectric portions arranged in the first trenches and covering lateral flanks of said region over the entire thickness of the second layer and a first part of the thickness of the first layer; first electrically conductive portions arranged in the first trenches and covering the lateral flanks of said region over a second part of the thickness of the first layer, and forming first electrodes of the diodes of said region; at least one second trench partially passing through the first layer and separating the portions of the first layer from the diodes of said region.