A semiconductor structure includes a group IV substrate and a patterned group III-V device over the group IV substrate. A blanket dielectric layer is situated over the patterned group III-V device. Contact holes in the blanket dielectric layer are situated over the patterned group III-V device. A liner stack having at least one metal liner is situated in each contact hole. Filler metals are situated over each liner stack and fill the contact holes. The patterned group device can be optically and/or electrically connected to group IV devices in the group IV substrate.

A multijunction solar cell including a substrate and a top (or light-facing) solar subcell having an emitter layer, a base layer, and a window layer adjacent to the emitter layer, the window layer composed of a material that is optically transparent, has a band gap of greater than 2.6 eV, and includes an appropriately arranged multilayer antireflection coating on the top surface thereof.

Transdermal microneedles continuous monitoring system is provided. The continuous system monitoring includes a substrate, a microneedle unit, a signal processing unit and a power supply unit. The microneedle unit at least comprises a first microneedle set used as a working electrode and a second microneedle set used as a reference electrode, the first and second microneedle sets arranging on the substrate. Each microneedle set comprises at least a microneedle. The first microneedle set comprises at least a sheet having a through hole on which a barbule forms at the edge. One of the sheets provides the through hole from which the barbules at the edge of the other sheets go through, and the barbules are disposed separately.

A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein the upper first solar subcell covers less than the entire upper surface of the second solar subcell, leaving an exposed portion of the second solar subcell around the periphery of the multijunction solar sell that lies in the path of the incoming light beam.

A multijunction solar cell includes an upper solar subcell, a bottom solar subcell adjacent to the upper solar subcell, a layer of light scattering elements below and directly adjacent to the bottom solar subcell, and a metallic layer disposed below and adjacent to the layer of light scattering elements.

A five junction solar cell and its method of manufacture including an upper first solar subcell composed of a semiconductor material having a first band gap; a second solar subcell adjacent to said first solar subcell and composed of a semiconductor material having a second band gap smaller than the first band gap and being lattice matched with the upper first solar subcell; a third solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a third band gap smaller than the second band gap and being lattice matched with the second solar subcell; a fourth solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a fourth band gap smaller than the third band gap and being lattice matched with respect to the third solar subcell; a graded interlayer adjacent to the fourth solar subcell and having a fifth band gap greater than the fourth band gap; and a bottom solar subcell adjacent to the graded interlayer and being lattice mismatched from the fourth solar subcell and having a sixth band gap smaller than the fifth band gap.

Photodetectors are fabricated on GaAs substrate using dilute nitride technology for high speed-high-sensitivity operation for telecom and datacom applications for the wavelength ranges covering O-band (Original band: 1260 nm to 1360) to C-band (conventional band: 1530-1565 nm).

An inverted metamorphic multijunction solar cell including an upper first solar subcell, a second solar subcell and a third solar subcell. The upper first solar subcell has a first band gap and positioned for receiving an incoming light beam. The second solar subcell is disposed below and adjacent to, and is lattice matched with, the upper first solar subcell, and has a second band gap smaller than the first band gap. The third solar subcell is disposed below the second solar subcell, and is composed of a GaAs base and emitter layer so as to optimize the efficiency of the solar cell after exposure to radiation. In some implementations, at least one of the solar subcells has a graded band gap throughout its thickness.

A light-receiving device of an embodiment of the present disclosure includes a photoelectric conversion layer that includes a first compound semiconductor with a first conductivity type and absorbs a wavelength of an infrared region, a first semiconductor layer formed on the photoelectric conversion layer, and an insulation layer formed to surround the photoelectric conversion layer and the first semiconductor layer, the first semiconductor layer having a second conductivity-type region at a middle region excluding a periphery facing the photoelectric conversion layer.

A semiconductor device comprises a substrate, one or more first III-semiconductor layers, and a plurality of superlattice structures between the substrate and the one or more first layers. The plurality of superlattice structures comprises an initial superlattice structure and one or more further superlattice structures between the initial superlattice structure and the one or more first layers. The plurality of superlattice structures is configured such that a strain-thickness product of semiconductor layer pairs in each superlattice structure of the one or more further superlattice structures is greater than or equal to a strain-thickness product of semiconductor layer pairs in superlattice structure(s) of the plurality of superlattice structures between that superlattice structure and the substrate. The plurality of superlattice structures is also configured such that a strain-thickness product of semiconductor layer pairs in at least one of the one or more further superlattice structures is greater than a strain-thickness product of semiconductor layer pairs in the initial superlattice structure.