A quantum device includes a substrate including a first material and including an upper surface thereof, a first layer comprising a compound of the first material disposed on the upper surface of the substrate, a second layer, comprising a metal oxide, disposed on the first layer, a third layer, comprising a noble metal, disposed on the second layer, a fourth layer, comprising a metal oxide, disposed on the third layer, a fifth layer, comprising a piezoelectric material, disposed on the fourth layer, a sixth layer, comprising a noble metal, disposed on the fifth layer, a seventh layer, comprising a material capable of quantum emission, disposed on the sixth layer, and an eighth layer, comprising a noble metal, disposed on the seventh layer, and at least one of the eighth layer and the seventh layer are sized to enable quantum emission from the seventh layer.

A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

A semiconductor device having a GeSiSn base region combined with an emitter region and a collector region can be used to fabricate a bipolar transistor or a heterojunction bipolar transistor. The GeSiSn base region can be compositionally graded or latticed matched or strained to GaAs. The GeSiSn base region can be wafer bonded to a GaN or SiC collector region.

A device that includes a metal(III)-polar III-nitride substrate having a first surface opposite a second surface, a tunnel junction formed on one of the first surface or a buffer layer disposed on the first surface, a p-type III-nitride layer formed directly on the tunnel junction, and a number of material layers; a first material layer formed on the p-type III-nitride layer, each subsequent layer disposed on a preceding layer, where one layer from the number of material layers is patterned into a structure, that one layer being a III-nitride layer. Methods for forming the device are also disclosed.

Disclosed are an adhesive transparent electrode and a method of fabricating the same. More particularly, an adhesive transparent electrode according to an embodiment of the present disclosure includes a substrate and an adhesive silicone-based polymer matrix, in which a metal nanowire network is embedded, deposited on the substrate, wherein the adhesive silicone-based polymer matrix includes a silicone-based polymer including a silicone-based polymer base and a silicone-based polymer crosslinker; and a non-ionic surfactant.

A light emitting device, a method of fabricating a light emitting device and a method of controlling light emission. The light emitting device includes a plasmonic structure. The plasmonic structure is configured to have a plurality of localized surface plasmon resonances. The light emitting device also includes a broadband light emitting layer having an emission spectrum substantially overlapping wavelengths of the localized surface plasmon resonances. A spacer layer is disposed between the plasmonic structure and the broadband light emitting layer. A color of light emitted by the broadband light emitting layer is tunable by the localized surface plasmon resonances of the plasmonic structure.

The present invention relates to a μLED light emitting device without electrical contact based on a wavelength down-conversion. The μLED light emitting device without electrical contact comprises μLED crystal grains, wavelength down-conversion light emitting lavers, ate upper driving electrode and a lower driving electrode, insulators, an optical micro-structure and a control module. The upper driving electrode and the lower driving electrode are free from direct electrical contact with each of the μLED crystal grains, the control module is electrically connected with the upper driving electrode and the lower driving electrode respectively to provide alternating driving signals to the upper driving electrode and the lower driving electrode so as to form a driving electric field, and the driving electric field controls an electron-hole recombination of the μLED crystal grain and emits a first light source which is converted into a second light source via the wavelength down-conversion light emitting layer. As a driving electrode in the μLED light emitting device without electrical contact based on the wavelength down-conversion provided by the present invention is free from electrical contact with a p-type semiconductor layer and an n-type semiconductor layer in the μLED crystal grain, there are no complicated manufacturing process of a chip in the μLED light emitting device and bonding and mass transfer processes of the μLED chip and a driving chip, so that the production cycle of the μLED light emitting device is shortened effectively and the manufacturing cost of the μLED light emitting device is reduced effectively.

A III-nitride LED with simultaneous visible and ultraviolet (UV) emission, in which the visible emission is due to conventional InGaN active region mechanisms and the UV emission occurs due to Auger carrier injection into a UV light emitting region, such as impurity-doped AlGaN. The primary application for the III-nitride LED is general airborne pathogen inactivation to prevent the transmission of airborne-mediated pathogens while being safe for humans.

Disclosed herein is a semiconductor light emitting device including a semiconductor light emitting element, a Zener diode, and a conductive support component that supports the semiconductor light emitting element and the Zener diode. The semiconductor light emitting element has a first electrode. The semiconductor light emitting device further includes a first wire connected to the Zener diode and the first electrode.

Disclosed herein is a semiconductor light emitting device including a semiconductor light emitting element and a conductive support component that supports the semiconductor light emitting element and that includes an electrically-conductive part and an insulating part. The electrically-conductive part includes a first electrically-conductive part and a second electrically-conductive part. The insulating part has an insulating main surface and an insulating back surface. The first electrically-conductive part includes a first main surface part exposed from the insulating main surface. The second electrically-conductive part includes a second back surface part exposed from the insulating back surface. The first main surface part includes a first main surface base part on which the semiconductor light emitting element is mounted and a first main surface extending part extending from the first main surface base part. The first main surface extending part overlaps with the second back surface part as viewed in the thickness direction.