A display device includes a pixel electrode disposed on a substrate and including a reflective electrode layer and an upper electrode layer, a contact electrode disposed on the pixel electrode, light-emitting elements disposed on the contact electrode and disposed perpendicular to the pixel electrode, a planarization layer disposed on the pixel electrode, the planarization layer filling a space between the light-emitting elements, and a common electrode disposed on the planarization layer and the light-emitting elements, and a size of the contact electrode is equal to a size of each of the light-emitting elements in a plan view, and the upper electrode layer is disposed on the reflective electrode layer and is in a polycrystalline phase.

The disclosure provides a display device and a manufacturing method thereof. The display device includes a substrate, a spacer layer, a light emitting element, and an optical layer. The spacer layer is disposed on the substrate and includes openings. The light emitting element and the optical layer are disposed in the opening.

A display device, according to an embodiment of the present invention, comprises a semiconductor light-emitting element, the semiconductor light-emitting element comprising: a first conductive electrode; an undoped semiconductor layer formed on the first conductive electrode; a first conductive semiconductor layer formed on the undoped semiconductor layer; an active layer formed on the first conductive semiconductor layer; a second conductive semiconductor layer formed on the active layer; and a second conductive electrode formed on the second conductive semiconductor layer; wherein the first conductive electrode is formed to cover a part of a side surface of the first conductive semiconductor layer.

In an embodiment an optical component includes an optical body at least partially translucent to visible light and a coating directly arranged at the optical body, wherein the coating has a reflection coefficient of at least 0.8 for at least one wavelength range in a range from 380 nm to 1500 nm and an average thickness between 10 μm and 200 μm inclusive, wherein the coating has a polysiloxane as base material, and wherein the polysiloxane comprises —SiO.sub.3/2 units.

A display device includes a pixel array substrate and a circuit board. The pixel array substrate has a first surface, a second surface opposite to the first surface, and a first side surface connecting the first surface and the second surface. Multiple bonding pads are located on the first surface. The circuit board is bent from above the first surface of the pixel array substrate to below the second surface. The circuit board is electrically connected to the bonding pads and includes a thermoplastic substrate. The thermoplastic substrate includes a third surface facing the pixel array substrate and a fourth surface opposite to the third surface. The thermoplastic substrate includes a first bend formed by thermoplastics.

Micro light-emitting diodes (LED) are distanced from a mirror layer that reflects light emitted by the LEDs to increase the light extraction efficiency of the LEDs. In some embodiments, micro LEDs are electrically coupled to the mirror layer by vias positioned at an end of the LED positioned proximate to the mirror layer. In other embodiments, a conductive layer is positioned adjacent to an electrode of multiple micro LEDs and a pillar contacts the conductive layer at a location where the conductive layer is not positioned adjacent to a micro LED electrode. Vias and pillars allow the mirror height to be increased relative to structures where micro LEDs extend into a mirror layer. Increasing the mirror height can reduce the amount of destructive interference at a release layer caused by reflections of LED-emitted light by the mirror layer when the release layer is ablated via laser irradiation.

A light-emitting device includes a semiconductor diode structure and a multi-layer reflector (MLR) structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength λ.sub.0 to propagate within the diode structure. The MLR structure is positioned against a back surface of the second semiconductor layer, includes two or more layers of dielectric materials of two or more different refractive indices, reflects incident output light within the diode structure, and is in near-field proximity to the active layer relative to λ.sub.0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The MLR structure can include scattering elements that scatter some laterally propagating output light to propagate perpendicularly.

A display device and a method of fabricating the same is provided. A display device includes first and second pixel circuit units spaced apart from each other, a first pixel electrode on the first pixel circuit unit, a second pixel electrode on the second pixel circuit unit, a first light-emitting element electrically connected to the first pixel electrode, and for emitting first light, a second light-emitting element electrically connected to the second pixel electrode, and for emitting second light, a first pixel connecting electrode between the first pixel electrode and the first light-emitting element, and a second pixel connecting electrode between the second pixel electrode and the second light-emitting element, wherein the first pixel electrode overlaps with the first light-emitting element, and wherein the second pixel electrode does not overlap with the second light-emitting element.

A preparation method of a display panel includes: forming multiple compensation groups on a substrate to obtain an array substrate, where the multiple compensation groups include at least first compensation group and second compensation group, and brightness difference of light-emitting elements of same light-emitting color in the first compensation group and the second compensation group under a same gray scale is larger than a preset value; calculating thicknesses of first color film layer, second color film layer and third color film layer corresponding to each of the multiple compensation groups respectively; forming the first color film layer, the second color film layer and the third color film layer on light-emitting side of the first light-emitting element, the second light-emitting element, and the third light-emitting element respectively according to the thicknesses of the first color film layer, the second color film layer and the third color film layer obtained by calculation.

A method for manufacturing a light emitting module includes: providing a light source including a first surface having a pair of electrodes, and a second surface; providing a light guide plate including a first main surface and a second main surface, the light guide plate defining a through-hole extending through the light guide plate from the first main surface to the second main surface, the through-hole having a first penetration portion disposed on a first main surface side, a second penetration portion disposed on a second main surface side, and an intermediate penetration portion connecting the first penetration portion and the second penetration portion, the intermediate penetration portion being narrower in width than the second surface of the light source; and disposing the light source in the second penetration portion of the light guide plate with a joining member being interposed between the light source and the light guide plate.