The present disclosure relates to a semiconductor light emitting device comprising: a growth substrate; a first semiconductor layer; a first light emitting part, including an active layer which is provided on the first semiconductor layer and generates ultraviolet light, and a second semiconductor layer; a second light emitting part, including an active layer which is provided on the first semiconductor layer and generates ultraviolet light, and a second semiconductor layer; a connecting part which is provided on the first semiconductor layer and connects the first light emitting part and the second light emitting part; an insulating layer that covers the first semiconductor layer, the first light emitting part, the second light emitting part and the connecting part; a first pad electrode which is formed on the insulating layer; and a second pad electrode which is formed on the insulating layer.

The present disclosure relates to a semiconductor light emitting device comprising: a growth substrate; a first semiconductor layer; a first light emitting part, including an active layer which is provided on the first semiconductor layer and generates ultraviolet light, and a second semiconductor layer; a second light emitting part, including an active layer which is provided on the first semiconductor layer and generates ultraviolet light, and a second semiconductor layer; a connecting part which is provided on the first semiconductor layer and connects the first light emitting part and the second light emitting part; an insulating layer that covers the first semiconductor layer, the first light emitting part, the second light emitting part and the connecting part; a first pad electrode which is formed on the insulating layer; and a second pad electrode which is formed on the insulating layer.

A light-emitting device includes a substrate and an epitaxial unit. The substrate has a first and a second surface. The substrate is formed on the first surface with a plurality of protrusions. The epitaxial unit includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially disposed on the first surface of the substrate. The first surface of the substrate has a first area that is not covered by the epitaxial unit, and a second area this is covered by the epitaxial unit. A height difference (h2) between the first area and the second area is no greater than 1 μm. A display apparatus and a lighting apparatus are also disclosed.

A light-emitting device includes a substrate and an epitaxial unit. The substrate has a first and a second surface. The substrate is formed on the first surface with a plurality of protrusions. The epitaxial unit includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially disposed on the first surface of the substrate. The first surface of the substrate has a first area that is not covered by the epitaxial unit, and a second area this is covered by the epitaxial unit. A height difference (h2) between the first area and the second area is no greater than 1 μm. A display apparatus and a lighting apparatus are also disclosed.

A method of manufacturing an optoelectronic device, including the steps of: forming, on a first surface of a first including assemblies of electronic components, a stack of insulating layers and of conductive tracks; forming, on another wafer, light-emitting diodes each comprising ends; forming a metal layer on at least a portion of the surface of the first wafer and another metal layer on at least a portion of the surface of the second wafer, the other metal layer being electrically coupled to the end of each light-emitting diode; placing into contact the metal layers; forming an insulated conductive via connecting another surface of the wafer to a conductive track; and forming insulated conductive trenches surrounding diodes.

The present disclosure relates to an epitaxial wafer and a preparing method thereof, and a light-emitting device. The epitaxial wafer includes a substrate and an epitaxial stack, the epitaxial stack is disposed on the substrate, and the epitaxial stack includes a first epitaxial structure, a conductive adhesive layer, and a second epitaxial structure which are sequentially stacked in a direction parallel to an extension direction of the substrate. The first epitaxial structure is adhesively fixed to the second epitaxial structure through the conductive adhesive layer. The first epitaxial structure includes a first N-type semiconductor layer, a first active layer, and a first P-type semiconductor layer. The second epitaxial structure includes a second N-type semiconductor layer, a second active layer, and a second P-type semiconductor layer.

A semiconductor ultraviolet light emitting device package is provided. The semiconductor ultraviolet light emitting device package includes: a semiconductor ultraviolet light emitting device mounted on the first surface of the package substrate and configured to emit deep ultraviolet light including a wavelength in a range of 250 nm to 285 nm; a reflector disposed on the first surface of the package substrate to surround the semiconductor ultraviolet light emitting device, and including an inclined sidewall that defines an opening of the reflector, the semiconductor ultraviolet light emitting device disposed within the opening; and a light transmitting cover including a lower surface covering the opening and an upper surface opposite to the lower surface, wherein an antireflective layer is disposed on at least one from among the lower surface and the upper surface.

A method for making a device. The method comprises forming a buffer layer on a substrate; forming a periodically doped layer on the buffer layer; forming one or more wires on the periodically doped layer, the wires being chosen from nanowires and microwires; and introducing porosity into the periodically doped layer to form a porous distributed Bragg reflector (DBR). Various devices that can be made by the method are also disclosed.

A method for making a device. The method comprises forming a buffer layer on a substrate; forming a periodically doped layer on the buffer layer; forming one or more wires on the periodically doped layer, the wires being chosen from nanowires and microwires; and introducing porosity into the periodically doped layer to form a porous distributed Bragg reflector (DBR). Various devices that can be made by the method are also disclosed.

A light emitting device includes a flexible substrate, at least one light emitting element, a sealing resin, an adhesion layer and a support member. The flexible substrate includes a flexible base member and a plurality of wiring portions disposed on one surface of the base member. At least one light emitting element is arranged on a first surface of the flexible substrate and electrically connected to the wiring portions. The sealing resin seals the at least one light emitting element. The adhesion layer and the support member are arranged in this order on a second surface of the flexible substrate different from the first surface of the flexible substrate. The support member has a recess in a region corresponding at least to a region on the first surface where the at least one light emitting element is arranged.