Disclosed are dielectric cavity arrays with cavities formed by pairs of dielectric tips, wherein the cavities have low mode volume (e.g., 7*10.sup.−5λ.sup.3, where X is the resonance wavelength of the cavity array), and large quality factor Q (e.g., 10.sup.6 or more). Applications for such dielectric cavity arrays include, but are not limited to, Raman spectroscopy, second harmonic generation, optical signal detection, microwave-to-optical transduction, and as light emitting devices.

A light emitting device includes a first active layer on a substrate, a current spreading length, and a plurality of mesa regions on the first active layer. At least a first portion of the first active layer can comprise a first electrical polarity. Each mesa region can include, at least a second portion of the first active layer, a light emitting region on the second portion of the first active layer with a dimension parallel to the substrate smaller than twice the current spreading length, and a second active layer on the light emitting region. The light emitting region can be configured to emit light with a target wavelength from 200 nm to 300 nm. At least a portion of the second active layer can comprise a second electrical polarity.

A method of fabricating and transferring high quality and manufacturable light-emitting devices, such as micro-sized light-emitting diodes (μLEDs), edge-emitting lasers and vertical-cavity surface-emitting lasers (VCSELs), using epitaxial later over-growth (ELO) and isolation methods. III-nitride semiconductor layers are grown on a host substrate using a growth restrict mask, and the III-nitride semiconductor layers on wings of the ELO are then made into the light-emitting devices. The devices are isolated from the host substrate to a thickness equivalent to the growth restrict mask and then transferred or lifted from of the host substrate. Back-end processing of the devices is then performed, such as attaching distributed Bragg reflector (DBR) mirrors, forming cladding layers, and/or adding heatsinks.

A light-emitting device package includes a frame including one side on which a first electrode is formed and the other side on which a second electrode is formed, an LED chip including a first conductive connection pad electrically connected to the first electrode and a second conductive connection pad electrically connected to the second electrode, a reflective member disposed on the frame, forming a cavity for accommodating the LED chip therein, and reflecting light emitted from the LED chip, and a wavelength conversion member filled in the cavity to cover the LED chip, wherein the reflective member includes a first side and a second side different from the first side, and a first height of the first side and a second height of the second side are formed to be different from each other.

Porous III-nitrides having controlled/tuned optical, electrical, and thermal properties are described herein. Also disclosed are methods for preparing and using such porous III-nitrides.

A device, such as a light-emitting device, e.g. a laser device, comprising: a plurality of group III-V semiconductor NWs grown on one side of a graphitic substrate, preferably through the holes of an optional hole-patterned mask on said graphitic substrate; a first distributed Bragg reflector or metal mirror positioned substantially parallel to said graphitic substrate and positioned on the opposite side of said graphitic substrate to said NWs; optionally a second distributed Bragg reflector or metal mirror in contact with the top of at least a portion of said NWs; and wherein said NWs comprise aim-type doped region and a p-type doped region and optionally an intrinsic region there between.

Improved temperature independence in infrared light emitting diodes (IRLEDs). The active stage groups (ASGs) occur at or at an integer multiple of each antinode of the e-field of the desired center wavelength. The structure is designed to yield increased efficiency at low (cryogenic) temperatures with a wide range of operational temperature independence. The structure may be designed to provide a wide range of temperature independent operation near room temperature. The spacing (S) between the centers of the active stage groups may be varied to create a more broad and shallow peak of the temperature dependence of the antinode enhancement. The IRLED may be an interband cascade LED. A plurality (or array) of IRLEDs may be used in an infrared scene projector (IRSP)

An optoelectronic component is specified comprising a semiconductor body comprising a first semiconductor layer sequence and a second semiconductor layer sequence which are arranged on top of one another in a stacking direction, wherein the first semiconductor layer sequence has a first active region, which generates electromagnetic primary radiation with a first peak wavelength the second semiconductor layer sequence comprises a second active region, which has a section configured to partially absorb electromagnetic primary radiation and to re-emit electromagnetic secondary radiation having a second peak wavelength, and the first peak wavelength is in a red wavelength range and the second peak wavelength is in an infrared wavelength range, or the first peak wavelength is smaller than the second peak wavelength by at most 100 nanometers.

Disclosed are RCLED lamp bead packaging process and RCLED lamp bead, which comprises steps of: dispensing a die-bonding glue, mounting a chip, baking, welding a bonding wire, dispensing a first layer of anti-reflection adhesive, baking, dispensing a second layer of anti-reflection adhesive, baking, and testing. Anti-reflection adhesive is dispensed in corresponding area to cover part capable of reflecting light in RCLED lamp bead and eliminate reflection effect effectively. The first layer of anti-reflection adhesive fills in specified area rapidly to achieve high production efficiency. The second layer of anti-reflection adhesive flows slowly after glue dispensing, so that the glue dispensing precision is improved and the light-emitting hole is prevent from being covered. When bonding wire is welded, a bracket is the first welding spot and a PAD of the chip is the second welding spot to achieve a lower radian of the bonding wire.

A full color display includes multiple pixels and has a white point, a direction of emission and a solid angle of emission around the direction of emission characterized by a half-cone angle θ. Each pixel includes: a sub-pixel including a red LED having a first geometry emitting red light into a range of emission angles, such that a fraction of the power emitted within the solid angle of emission is at least 1.2*(1−cos(θ).sup.2); a sub-pixel including a green LED having a second geometry emitting green light into a range of emission angles, such that a fraction of the power emitted within the solid angle of emission is at least 1.2*(1−cos(θ).sup.2); and a sub-pixel including a blue LED emitting blue light into a range of emission angles, such that a fraction of the power emitted within the solid angle of emission is at least 1.2*(1−cos(θ).sup.2). The LEDs are configured such that, in any direction within the solid angle of emission, white light emitted by the display has a chromaticity difference Du′v′ from the white point of the display which is less than 0.01.