A method of manufacturing a light-emitting device includes: providing a substrate; forming a light-emitting structure comprising an active layer on the substrate; forming a protective layer having a first thickness on the light-emitting structure; etching the protective layer such that the protective layer has a second thickness less than the first thickness; and patterning the protective layer.

A method of manufacturing a light-emitting device includes: providing a substrate; forming a light-emitting structure comprising an active layer on the substrate; forming a protective layer having a first thickness on the light-emitting structure; etching the protective layer such that the protective layer has a second thickness less than the first thickness; and patterning the protective layer.

A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.

A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.

A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.

An image display device includes: a circuit element; a first interconnect layer electrically connected to the circuit element; a first insulating film covering the circuit element and the first interconnect layer; a light emitting element disposed on the first insulating film; a second insulating film covering at least a part of the light emitting element; a second interconnect layer electrically connected to the light emitting element and disposed on the second insulating film; and a first via extending through the first insulating film and the second insulating film, and electrically connecting the first interconnect layer and the second interconnect layer.

A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

A method for manufacturing a light emitting device comprising an optical member provided on a light extracting surface side of a semiconductor light emitting element via a first light transmissive layer, the method comprising the steps of: (i) roughening said extracting surface of said semiconductor light emitting element, (ii) forming said first light transmissive layer on an entirety of said roughened light extracting surface, (iii) flattening an upper surface of said first light transmissive layer, and (iv) directly bonding said flattened upper surface of said first light transmissive layer and a surface of said optical member by performing surface-activated bonding, atomic diffusion bonding, or hydroxyl bonding.

A method for manufacturing a light emitting device comprising an optical member provided on a light extracting surface side of a semiconductor light emitting element via a first light transmissive layer, the method comprising the steps of: (i) roughening said extracting surface of said semiconductor light emitting element, (ii) forming said first light transmissive layer on an entirety of said roughened light extracting surface, (iii) flattening an upper surface of said first light transmissive layer, and (iv) directly bonding said flattened upper surface of said first light transmissive layer and a surface of said optical member by performing surface-activated bonding, atomic diffusion bonding, or hydroxyl bonding.

A wavelength converter 100 includes: a first phosphor 1 composed of an inorganic phosphor activated by Ce.sup.3+; and a second phosphor 2 composed of an inorganic phosphor activated by Ce.sup.3+ and different from the first phosphor. At least one of the first phosphor and the second phosphor is particulate. The first phosphor and the second phosphor are bonded to each other by at least one of a chemical reaction in a contact portion between the compound that constitutes the first phosphor and a compound that constitutes the second phosphor and of adhesion between the compound that constitutes the first phosphor and the compound that constitutes the second phosphor.