The present disclosure relates to the field of dielectric elastomers. In particular, provided are a dielectric elastomer precursor fluid, a preparation method therefor and the use thereof, a dielectric elastomer composite material, a flexible device, and a light-emitting device. The dielectric elastomer precursor fluid comprises an elastomer matrix, an ionic liquid and a solvent, wherein the volume fraction of the ionic liquid and the solvent is 5-45%. The dielectric elastomer precursor fluid has the advantages of a high conductivity, a high transparency and a good fluidity, and is beneficial for preparing a dielectric elastomer composite material having a high dielectric constant, a low elastic modulus and a high optical transparency, thus fully solving the problem that a high dielectric constant cannot be balanced with a low elastic modulus and a high optical transparency in a dielectric elastomer.

The present disclosure relates to the field of dielectric elastomers. In particular, provided are a dielectric elastomer precursor fluid, a preparation method therefor and the use thereof, a dielectric elastomer composite material, a flexible device, and a light-emitting device. The dielectric elastomer precursor fluid comprises an elastomer matrix, an ionic liquid and a solvent, wherein the volume fraction of the ionic liquid and the solvent is 5-45%. The dielectric elastomer precursor fluid has the advantages of a high conductivity, a high transparency and a good fluidity, and is beneficial for preparing a dielectric elastomer composite material having a high dielectric constant, a low elastic modulus and a high optical transparency, thus fully solving the problem that a high dielectric constant cannot be balanced with a low elastic modulus and a high optical transparency in a dielectric elastomer.

Systems and methods for forming semiconductor layers, including oxide-based layers, are disclosed in which a material deposition system has a rotation mechanism that rotates a substrate around a center axis of the substrate. The system includes a heater configured to heat the substrate and a positioning mechanism that allows dynamic adjusting of an orthogonal distance, a lateral distance, and a tilt angle of an exit aperture of a material source relative to the substrate. In some embodiments, the dynamic adjusting is based on a desired layer uniformity for a desired layer growth rate. In some embodiments, the orthogonal distance, the lateral distance, or the tilt angle depends on a predetermined material ejection spatial distribution of the material source.

Systems and methods for forming semiconductor layers, including oxide-based layers, are disclosed in which a material deposition system has a rotation mechanism that rotates a substrate around a center axis of the substrate. The system includes a heater configured to heat the substrate and a positioning mechanism that allows dynamic adjusting of an orthogonal distance, a lateral distance, and a tilt angle of an exit aperture of a material source relative to the substrate. In some embodiments, the dynamic adjusting is based on a desired layer uniformity for a desired layer growth rate. In some embodiments, the orthogonal distance, the lateral distance, or the tilt angle depends on a predetermined material ejection spatial distribution of the material source.

A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.

A transparent thin film display element (100) with a display region(101), and a transition region (105) having a first edge (106) bordering the display region and a second edge (107) opposite to the first edge, the transparent display element having a layer stack (103) comprises:a first conductor layer (110); a second conductor layer (120); and an emissive layer (130) superposed between the first and the second conductor layers and configured to emit light upon electrical current flowing through the emissive layer between the first and the second conductor layers. At least one layer (120) of a group comprising the first and the second conductor layers and the emissive layer has, in the transition region (105), a first coverage at the first edge (106), a second coverage lower than the first coverage at the second edge (107), and an intermediate coverage lying between the first and the second coverage.

In embodiments, an optoelectronic device comprises a substrate formed of magnesium oxide, and a multi-region stack epitaxially deposited upon the substrate. The multi-region stack may comprise a non-polar crystalline material structure along a growth direction, or may comprise a crystal polarity having an oxygen-polar crystal structure or a metal-polar crystal structure along the growth direction. In some cases, at least one region of the multi-region stack is a bulk semiconductor material comprising Mg.sub.(x)Zn.sub.(1-x)O. In some cases, at least one region of the multi-region stack is a superlattice comprising MgO and Mg.sub.(x)Zn.sub.(1-x)O.

A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has a sub-layer made of a nitride-based semiconductor material including Al, and having an energy band gap greater than that of said electron-blocking layer. The P-type electron-blocking layer is made of a nitride-based semiconductor material including Al, and has an energy band gap greater than that of the P-type cladding layer.

A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.

A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has first, second, and third sub-layers that are stacked on one another in a direction away from the N-type cladding layer. The first, second, and third sub-layers have energy band gaps Eg1, Eg2, and Eg3 which satisfy a relationship of Eg1<Eg2<Eg3. In addition, Eg3 is greater than an energy band gap of the P-type electron-blocking layer.