Disclosed in an embodiment is a semiconductor device package comprising: a body comprising a cavity; a semiconductor device disposed within the cavity; and a light transmission member disposed on an upper portion of the cavity, wherein the body comprises a first conductive part and a second conductive part disposed to be spaced apart from each other in a first direction, a first insulating part disposed between the first conductive part and the second conductive part, and a second insulating part disclosed in an edge region where a lower surface and side surfaces of the body meet, wherein the cavity comprises a stepped portion on which the light transmission member is disposed, and wherein the second insulating part overlaps with the stepped portion in a vertical direction of the body.

A light-emitting element includes: a substrate; a semiconductor layered body including: a first semiconductor layer, an active layer, and a second semiconductor layer, wherein a portion of the first semiconductor layer is exposed from the active layer and the second semiconductor layer; a first electrode disposed on the exposed portion of the first semiconductor layer and electrically connected to the first semiconductor layer; a second electrode disposed on the second semiconductor layer; a first insulating layer covering the first electrode and the second electrode and having a first opening above the first electrode and a second opening above the second electrode; a first pad electrode disposed on the first insulating layer and electrically connected to the first electrode through the first opening; and a second pad electrode disposed on the first insulating layer and electrically connected to the second electrode through the second opening.

A method for manufacturing a quantum dot layer includes: performing first application of applying, to a position overlapping with a substrate, a first solution including a plurality of particles including a core and a first ligand, a first inorganic precursor, and a first solvent; performing first heating of heating first solution to a first temperature or higher after the performing first application, the first temperature being a higher temperature of a melting point of the first ligand and a boiling point of the first solvent; and performing second heating of heating the first inorganic precursor to a second temperature after the performing first heating, the second temperature being higher than the first temperature and being a temperature, at which the first inorganic precursor epitaxially grows around the core and at which a first shell configured to coat the core is formed to form a plurality of first quantum dots.

A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi.sub.4Al.sub.3N.sub.9, SrSiAl.sub.2O.sub.3N.sub.2, BaSi.sub.2N.sub.2O.sub.2, ALi.sub.3XO.sub.4, M*.sub.(1−x*−y*−z*) Z*.sub.z*[A*.sub.a*B*.sub.b*C*.sub.c*D*.sub.d*E*.sub.e*N.sub.4-n*O.sub.n*], and combinations thereof.

The present invention discloses a bidirectional ultraviolet light emitting diode (UV LED) based on N—ZnO/N—GaN/N—ZnO heterojunction as well as its preparation method. The LED includes: N—ZnO microwires, a N—GaN film, a PMMA protective layer and alloy electrodes; and its preparation method includes the following steps: lay two N—ZnO microwires on the N—GaN film, then spin-coat a PMMA protective layer on the film to fix the N—ZnO microwires until the PMMA protective layer spreads over the N—ZnO microwires, and then place the film on a drying table to solidify the PMMA protective layer; then etch the PMMA protective layer with O.sub.2 to expose the N—ZnO microwires, and prepare alloy electrodes on different N—ZnO microwires to construct a N—ZnO/N—GaN/N—ZnO heterojunction to constitute a complete device. The present invention constructs an N/N/N symmetrical structure; the device is composed of N—ZnO and N—GaN, emits light in the ultraviolet region and has a small turn-on voltage.

A light-emitting element according to the present invention includes an anode, a hole transport layer, and a light-emitting layer containing a quantum dot, and a cathode in this order, and the hole transport layer includes an n+-type semiconductor layer, and a p+-type semiconductor layer adjacent to the n+-type semiconductor layer and disposed closer to the light-emitting layer than the n+-type semiconductor layer (24).

A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.

A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.

A method for manufacturing a light emitting device can include providing a substrate; forming a first active layer with a first electrical polarity; forming a light emitting region configured to emit light with a target wavelength between 200 nm and 300 nm; forming a second active layer with a second electrical polarity; forming a first electrical contact layer, optionally comprising a first optical reflector; removing a portion of the first electrical contact layer, the second active layer, the light emitting region, and the first active layer to form a plurality of mesas; and forming a second electrical contact layer. Each mesa can include a mesa width smaller than 10 times the target wavelength that confines the emitted light from the light emitting region to fewer than 10 transverse modes, or a mesa width smaller than twice a current spreading length of the light emitting device.

A light emitting device including a substrate having a protruding pattern on an upper surface thereof, a first sub-unit disposed on the substrate, a second sub-unit disposed between the substrate and the first sub-unit, a third sub-unit disposed between the substrate and the second sub-unit, a first insulation layer at least partially in contact with side surfaces of the first, second, and third sub-units, and a second insulation layer at least partially overlapping with the first insulation layer, in which at least one of the first insulation layer and the second insulation layer includes a distributed Bragg reflector.