H01L33/346

CONVERTER WITH GLASS LAYERS

A wavelength converting layer may have a glass or a silicon porous support structure. The wavelength converting layer may also have a cured portion of wavelength converting particles and a binder laminated onto the porous glass or silicon support structure.

Converter with glass layers

A wavelength converting layer may have a glass or a silicon porous support structure. The wavelength converting layer may also have a cured portion of wavelength converting particles and a binder filling the porous glass or silicon support structure.

LIGHT-EMITTING DIODE (LED) PACKAGE WITH REFLECTIVE COATING AND METHOD OF MANUFACTURE

A light-emitting diode (LED) package and method of manufacture are described. An LED package includes an LED die that has a top surface, a bottom surface and side surfaces. The package further includes a wavelength converting element having a top surface, a bottom surface and side surfaces. The bottom surface of the wavelength converting element is adjacent the top surface of the LED die. The package further includes a light reflecting coating surrounding at least the side surfaces of both the LED die and the wavelength converting element. The light reflective coating has at a least a portion that extends above the top surface of the wavelength converting element.

LIGHT-EMITTING MATERIAL, METHOD FOR PRODUCING LIGHT-EMITTING MATERIAL AND DISPLAY APPARATUS
20170358745 · 2017-12-14 · ·

A light-emitting material, a method for producing the light-emitting material and a display apparatus are provided. An average particle size of the light-emitting material is 0.1 μm to 30 μm, and an average distance between outermost quantum dots of a particle of the light-emitting material and a surface of the particle of the light-emitting material is 0.5 nm to 25 nm, or a minimum distance between the outermost quantum dots of a particle of the light-emitting material and the surface of the particle of the light-emitting material is 0.1 nm to 20 nm.

UV LED package structure for improving light extraction

The application is related to a UV LED package structure for improving light extraction efficiency. An UV LED chip is set on a substrate with an anti-flare film for increasing upward light extraction to concentrate the emitted light by an optical element. Because no glue is filled between the UV LED chip and the optical element, it will be prevented the glue from spoiling and deteriorating by the UV light from the UV LED chip. Thereby, the UV LED package structure can prevent from the light performance reducing.

Luminous body, light emitting film, light emitting diode and light emitting device having luminous body

A luminous body includes a first moiety including a plurality of first ligands combined to a surface of an inorganic emitting particle; and a second moiety including silsesquioxanes connected to a second ligand connected to one of the first ligands, wherein one of the first and second ligands is a polar ligand, and the other one of the first and second ligands is a non-polar ligand.

DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.

Display apparatus and method of manufacturing the same

Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.

Display apparatus and method of manufacturing the same

Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.

DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.