A display device including: a substrate including pixel electrodes; a passivation layer on the substrate, a groove in the passivation layer between the pixel electrodes;

contact electrodes on the pixel electrodes; and a light-emitting element layer comprising a plurality of light-emitting elements respectively bonded onto the contact electrodes and having a plurality of semiconductor layers thereon. The groove does not overlap the plurality of light-emitting elements.

A display device, according to an embodiment of the present invention, comprises a semiconductor light-emitting element, the semiconductor light-emitting element comprising: a first conductive electrode; an undoped semiconductor layer formed on the first conductive electrode; a first conductive semiconductor layer formed on the undoped semiconductor layer; an active layer formed on the first conductive semiconductor layer; a second conductive semiconductor layer formed on the active layer; and a second conductive electrode formed on the second conductive semiconductor layer; wherein the first conductive electrode is formed to cover a part of a side surface of the first conductive semiconductor layer.

In an embodiment an optical component includes an optical body at least partially translucent to visible light and a coating directly arranged at the optical body, wherein the coating has a reflection coefficient of at least 0.8 for at least one wavelength range in a range from 380 nm to 1500 nm and an average thickness between 10 μm and 200 μm inclusive, wherein the coating has a polysiloxane as base material, and wherein the polysiloxane comprises —SiO.sub.3/2 units.

A light-emitting device includes a substrate and an epitaxial unit. The substrate has a first and a second surface. The substrate is formed on the first surface with a plurality of protrusions. The epitaxial unit includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially disposed on the first surface of the substrate. The first surface of the substrate has a first area that is not covered by the epitaxial unit, and a second area this is covered by the epitaxial unit. A height difference (h2) between the first area and the second area is no greater than 1 μm. A display apparatus and a lighting apparatus are also disclosed.

A display device includes a substrate, a first light-emitting element, a second light-emitting element, and a third light-emitting element on the substrate, each of the first, second, and third light-emitting elements includes a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer, an opening formed in the second semiconductor layer and the third semiconductor layer of the third light-emitting element, and a wavelength conversion member located at the opening, wherein the first light-emitting element and the third light-emitting element are configured to emit first light, and the second light-emitting element is configured to emit second light, and the wavelength conversion member is configured to convert the first light from the third light-emitting element into third light.

A light-emitting device includes a semiconductor diode structure and a multi-layer reflector (MLR) structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength λ.sub.0 to propagate within the diode structure. The MLR structure is positioned against a back surface of the second semiconductor layer, includes two or more layers of dielectric materials of two or more different refractive indices, reflects incident output light within the diode structure, and is in near-field proximity to the active layer relative to λ.sub.0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The MLR structure can include scattering elements that scatter some laterally propagating output light to propagate perpendicularly.

A light-emitting device includes a semiconductor diode structure and a multi-layer reflector (MLR) structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength λ.sub.0 to propagate within the diode structure. The MLR structure is positioned against a back surface of the second semiconductor layer, includes two or more layers of dielectric materials of two or more different refractive indices, reflects incident output light within the diode structure, and is in near-field proximity to the active layer relative to λ.sub.0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The MLR structure can include scattering elements that scatter some laterally propagating output light to propagate perpendicularly.

A display device and method for fabrication thereof includes a plurality of pixel electrodes and common electrode connection parts that are spaced from each other on a first substrate, a plurality of light emitting elements on the plurality of pixel electrodes, a plurality of common electrode elements on the common electrode connection parts, and a common electrode layer on the plurality of light emitting elements and the plurality of common electrode elements, wherein each of the plurality of light emitting element includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, each of the plurality of common electrode elements includes at least the second semiconductor layer, and the common electrode layer includes a same material as the second semiconductor layer to be connected to the second semiconductor layers of the plurality of light emitting elements.

A light-emitting device includes a semiconductor diode structure, a quasi-guided-mode (QGM) structure against the back of the diode structure, and a reflector against the back of the QGM structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength λ.sub.0 to propagate within the diode structure. The QGM structure includes a waveguide layer, a cladding layer, and scattering elements, and is in near-field proximity to the active layer relative to λ.sub.0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The scattering elements redirect output light propagating within the device, including in laterally propagating quasi-guided modes supported by the QGM structure, to propagate perpendicularly toward the device exit surface.

Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter that is less than twice an electron diffusion length of the semiconductor layer. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.