A light emitting device includes a substrate including a base member including a front surface, a rear surface opposite to the front surface, a bottom surface perpendicular to the front surface, and a top surface opposite to the bottom surface, a first wiring portion located on the front surface, and a second wiring portion located on the rear surface; a light emitting element electrically connected with the first wiring portion; and a first reflective member covering a lateral surface of the light emitting element and the front surface of the base member. The base member has a recessed portion opened on the rear surface and the bottom surface. The substrate includes a third wiring portion covering an inner wall of the recessed portion and electrically connected with the second wiring portion, and a via in contact with the first wiring portion, the second wiring portion and the third wiring portion.

Provided is a wavelength conversion member including a ceramic layer as a reflective layer and having excellent luminescence intensity and a light emitting device using the same. A wavelength conversion member 10 including: a first porous ceramic layer 1 having a porosity of 20% by volume or more; and a phosphor layer 2 formed on a principal surface 1a of the first porous ceramic layer 1.

A light system includes a first substrate and a second substrate having the first substrate thereon. A light emitting diode (LED) is connected to the first substrate. An encapsulation layer covers the LED and at least a majority of the first substrate.

A light emitting device and a light emitting module both having narrow spacing between emission faces, as well as a method of manufacturing light emitting device and a method of manufacturing light emitting module are provided.

A light emitting device 100 includes element structure bodies 15, at least one of the element structure bodies including a submount substrate 10, a light emitting element 20 disposed on the submount substrate 10, a light transmitting member 30 disposed on the light emitting element 20, and a first cover member 50 covering the lateral faces of the light emitting element 20 on the submount substrate 10, and a second cover member 60 supporting the element structure bodies 15 by covering the lateral faces of the element structure bodies 15.

A display apparatus is provided. The display apparatus includes a substrate, a transistor, a metal layer, and a light-emitting diode. The transistor is disposed on the substrate. The metal layer is disposed on the transistor and electrically connected to the transistor, wherein a first distance is between the upper surface of the metal layer and the substrate in a direction perpendicular to the substrate. The light-emitting diode is disposed on the metal layer, wherein the light-emitting diode includes a light-emitting diode body and an electrode, the light-emitting diode body is electrically connected to the metal layer via the electrode, the light-emitting diode body has a first surface and a second surface opposite to the first surface, the first surface and the second surface are parallel to the substrate, and in the direction above, a second distance is between the first surface and the second surface, wherein the ratio of the second distance to the first distance is greater than or equal to 0.25 and less than or equal to 6.

Light emitting devices and components having excellent chemical resistance and related methods are disclosed. In one embodiment, a component of a light emitting device can include a silver (Ag) portion, which can be silver on a substrate, and a protective layer disposed over the Ag portion. The protective layer can at least partially include an inorganic material for increasing the chemical resistance of the Ag portion.

Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

A method of manufacturing a light emitting module is provided. A plurality of light-emitting diodes are aligned on an elongated base board. By a dispenser, an uncured paste of sealing material is continuously applied on a plurality of light-emitting diodes aligned on the elongated base board. The applied paste of sealing material is cured.

The invention relates to a vertical light-emitting diode chip structure capable of measuring temperature and a temperature measurement calibration method thereof. A semiconductor epitaxial structure and a metal film resistance temperature measurement structure are separately arranged on the upper plane of a transverse high thermal conductivity extension structure. Through the high thermal conductivity characteristic of the transverse high thermal conductivity extension structure, the temperature of an active layer of the semiconductor epitaxial structure can be quickly transferred to the metal film resistance temperature measurement structure. The temperature measurement calibration method comprises: placing a plurality of connected and uncut package support plates into a constant temperature device at the same time to obtain a temperature calibration relation for different package support plates at the same time to reduce the temperature calibration cost in a batch mass production mode.

LED packages are disclosed capable of emitting a range of colors including white light, while still emitting that can have a high color rendering index (CRI). The LED packages can have a simplified reflective cup arrangement and improved lead frame design. The LED packages according to the present invention comprise one or more LED WITH PHOSPHORs for high CRI lighting applications, along with multiple narrowband emitters (e.g. RGB LEDs), but do not have a dam or partition to segregate the LED WITH PHOSPHOR from the multiple emitters. This results in a LED package that is less complex and easier to manufacture, while still providing the desired flexibility in LED package emissions.