A magnesium-based thermoelectric conversion material includes a first layer formed of Mg.sub.2Si and a second layer formed of Mg.sub.2Si.sub.xSn.sub.1-x (here, x is equal to or greater than 0 and less than 1), in which the first layer and the second layer are directly joined to each other, and within a junction surface with the first layer and in the vicinity of the junction surface, the second layer has a tin concentration transition region in which a tin concentration increases as a distance from the junction surface increases. The junction layer is regarded as a site in which a tin concentration is found to be equal to or lower than a detection limit by the measurement performed using EDX.

A structure and method for cooling a three-dimensional integrated circuit (3DIC) are provided. A cooling element is configured for thermal connection to the 3DIC. The cooling element includes a plurality of individually controllable cooling modules disposed at a first plurality of locations relative to the 3DIC. Each of the cooling modules includes a cold pole and a heat sink. The cold pole is configured to absorb heat from the 3DIC. The heat sink is configured to dissipate the heat absorbed by the cold pole and is coupled to the cold pole via an N-type semiconductor element and via a P-type semiconductor element. A temperature sensing element includes a plurality of thermal monitoring elements disposed at a second plurality of locations relative to the 3DIC for measuring temperatures at the second plurality of locations. The measured temperatures control the plurality of cooling modules.

A thermoelectric element to convert thermal energy into electrical energy includes a first electrode part, a second electrode part having a different work function than the first electrode part and arranged at a distance from the first electrode part, on a same surface of a substrate as the first electrode part, and a middle part provided between the first electrode part and the second electrode part.

The present invention provides: a thermoelectric conversion material capable of being produced in a simplified manner and at a lower cost and excellent in thermoelectric performance and flexibility, and a method for producing the material. The thermoelectric conversion material has, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound. The method for producing a thermoelectric conversion material having, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound includes a step of applying a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound onto a support and drying it to form a thin film thereon, and a step of annealing the thin film.

A thermoelectric composition is provided that includes a nanocomposite comprising a copper selenide (Cu.sub.2Se) matrix having a plurality of nanoinclusions comprising copper metal selenide (CuMSe.sub.2) distributed therein. M may be selected from the group consisting of: indium (In), aluminum (Al), gallium (Ga), antimony (Sb), bismuth (Bi), and combinations thereof. The thermoelectric composition has an average figure of merit (ZT) of greater than or equal to about 1.5 at a temperature of less than or equal to about 850K (about 577° C.). Methods of making such a thermoelectric nanocomposite material by a sequential solid-state transformation of a CuSe.sub.2 precursor are also provided.

Disclosed is a composition for forming a thermoelectric film, the composition comprising an edge-oxidized graphene oxide, wherein the edge-oxidized graphene oxide is dispersed in a thermoelectric material.

To provide a Peltier cooling element that is excellent in thermoelectric performance and flexibility and can be manufactured easily at low cost. A Peltier cooling element containing a thermoelectric conversion material containing a support having thereon a thin film containing a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, and a method for manufacturing a Peltier cooling element containing a thermoelectric conversion material containing a support having thereon a thin film containing a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, the method containing: coating a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, on a support, and drying, so as to form a thin film; and subjecting the thin film to an annealing treatment.

A thermoelectric material is provided. The material can be a grain boundary modified nanocomposite that has a plurality of bismuth antimony telluride matrix grains and a plurality of zinc oxide nanoparticles within the plurality of bismuth antimony telluride matrix grains. In addition, the material has zinc antimony modified grain boundaries between the plurality of bismuth antimony telluride matrix grains.

A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises silicon or a silicon alloy, and the average grain size of the crystal grains constituting the polycrystalline body is 1 μm or less, and the electrical conductivity is 10,000 S/m or higher.

A thermoelectric sintered body according to an embodiment comprises thermoelectric powder, the thermoelectric powder, arranged in a horizontal direction, comprising: a plurality of first powders in the shape of plate-type flakes; and a plurality of second powders in a shape different from that of the first powders, wherein the second powders comprise 5 volume % or less of the total thermoelectric powder.