A power generation device manufacturing method and a power generation device are proposed. In one embodiment, the method includes (a) forming a halide perovskite active layer on a flexible substrate bent by a stress applied thereto and (b) releasing the stress applied to the substrate on which the halide perovskite active layer is formed, thereby unfolding the bent substrate. By applying a strain to the active layer of the power generation device and controlling the same, using the method described above, it is possible to improve the performance of the power generation device without changing the composition of the active layer or the configuration of the device.

A film structure body has: a substrate that is a silicon substrate including an upper surface composed of a (100) plane; an orientation film including a zirconium oxide film that is cubic crystal (100)-oriented on the upper surface; and a conductive film including a platinum film that is cubic crystal (100)-oriented on the orientation film.

A method of forming an Al.sub.1-xSc.sub.xN film can include heating a substrate, in a reactor chamber, to a temperature range, providing a precursor comprising Sc to the reactor chamber, providing a dopant comprising Mg, C, and/or Fe to the reactor chamber, and forming an epitaxial Al.sub.1-xSc.sub.xN film on the substrate in the temperature range, the epitaxial Al.sub.1-xSc.sub.xN film including the dopant in a concentration in a range between about 1×10.sup.17/cm.sup.3 and about 2×10.sup.20/cm.sup.3 on the substrate.

The present disclosure relates to a method of forming a device. The method includes depositing a first layer of getter material on a substrate. A first electrode is formed in a first conductive layer deposited on the first layer of getter material. An insulator element is formed in a piezoelectric layer deposited on the first electrode. A second electrode is formed in a second conductive layer deposited on the insulator element. A first input-output electrode is formed to be conductively connected to the first layer of getter material and a second input-output electrode is formed to be conductively connected to the second electrode.

There is provided a piezoelectric composite comprising a piezoelectric polymer and particles of a filler dispersed in the polymer, wherein the filler is in micro or nanoparticle form and is present in a filler:polymer weight ratio between about 1:99 and about 95:5. There is also provided an ink and ink cartridge for 3D printing of the piezoelectric composite. There is also provided a piezoelectric 3D printed material comprising the piezoelectric composite and a bifunctional material comprising the piezoelectric composite with one or more conductive electrodes adjacent to the piezoelectric composite. Methods of manufacture and uses thereof are also provided, including methods for 3D printing of a piezoelectric 3D printed material via solvent-cast or FDM 3D printing starting from the piezoelectric composite and/or the ink.

A method is provided for fabricating piezoelectric plates. A sacrificial layer is formed overlying a growth substrate. A template layer, with openings exposing sacrificial layer surfaces, is formed over the sacrificial layer. An adhesion layer/first electrode stack is selectively deposited in the openings overlying the sacrificial layer surfaces, and a piezoelectric material formed in the openings overlying the stack. Then, a second electrode is formed overlying the piezoelectric material. Using the second electrode as a hardmask, the piezoelectric material is etched to form polygon-shaped structures, such as disks, attached to the sacrificial layer surfaces. After removing the template layer and annealing, the polygon-shaped structures are separated from the sacrificial layer. With the proper choice of growth substrate material, the annealing can be performed at a relatively high temperature.

An aspect of the present invention relates to a vibration element comprising: a substrate; a ceramic layer containing glass and provided on the substrate; and a piezoelectric element comprising an electrode layer fixed to the substrate with the ceramic layer therebetween and a piezoelectric layer, wherein the piezoelectric layer, the electrode layer, the substrate, and the ceramic layer are integrated by the piezoelectric layer, the electrode layer, the substrate, and the ceramic layer being sintered together at a sintering temperature of from 800° C. or higher to 940° C. or lower.

A method for forming a pressure sensor includes forming a base of a sapphire material, the base including a cavity formed therein; forming a sapphire membrane on top of the base and over the cavity; forming a lower electrode on top of the membrane; forming a piezoelectric material layer on an upper surface of the lower electrode, the piezoelectric material layer being formed of aluminum nitride (AIN); and forming at least one upper electrode on an upper surface of the piezoelectric material layer.

In some embodiments, the present disclosure relates to a method in which a first set of one or more voltage pulses is applied to a piezoelectric device over a first time period. During the first time period, the method determines whether a performance parameter of the piezoelectric device has a first value that deviates from a reference value by more than a predetermined value. Based on whether the first value deviates from the reference value by more than the predetermined value, the method selectively applies a second set of one or more voltage pulses to the piezoelectric device over a second time period. The second time period is after the first time period and the second set of one or more voltage pulses differs in magnitude and/or polarity from the first set of one or more voltage pulses.

A transducer of the preferred embodiment including a transducer and a plurality of adjacent, tapered cantilevered beams. Each of the beams define a beam base, a beam tip, and a beam body disposed between the beam base and the beam tip. The beams are arranged such that each of the beam tips extends toward a common area. Each beam is joined to the substrate along the beam base and is free from the substrate along the beam body. A preferred method of manufacturing a transducer can include: depositing alternating layers of piezoelectric and electrode onto the substrate in block, processing the deposited layers to define cantilever geometry in block, depositing metal traces in block, and releasing the cantilevered beams from the substrate in block.