The invention relates to a composition comprising at least one electroactive fluorinated terpolymer, and at least one second polymer compatible with the electroactive fluorinated terpolymer and having a glass transition temperature lower than that of the electroactive fluorinated terpolymer. The invention also relates to a method for producing said composition, and to a device such as an actuator comprising a substrate and a film of the above-mentioned composition.

The disclosed embodiments are generally directed to optical systems. The optical systems may include a proximal lens that may transmit light toward an eye of a user. The optical systems may also include a distal lens that may, in combination with the proximal lens, correct for at least a portion of a refractive error of the eye of the user. The optical systems may further include a selective transmission interface. The selective transmission interface may couple the proximal lens to the distal lens, transmits light having a selected property, and does not transmit light that does not have the selected property. The optical system can also include an accommodative lens, such as a liquid lens. Various other methods, systems, and computer-readable media are also disclosed.

Embodiments described herein involve methods of forming an interactive card with indicators on a substrate. A plurality of indicators are formed on the substrate by way of a printed electronics process. A plurality of displaceable regions of piezoelectric material are formed on the substrate by way of a printed electronics process. Electrical interconnections are formed on the substrate by way of a printed electronics process, the electrical interconnections connecting an indicator and an associated displaceable region of piezoelectric material such that displacement of the associated displaceable region of piezoelectric material generates a voltage therein that is provided to the indicator in order to actuate the indicator and thereby indicate displacement of the associated displaceable region of piezoelectric material.

There is provided a piezoelectric element which includes a first electrode which is formed on a substrate, a piezoelectric layer which is formed on the first electrode, and is formed from a compound oxide having an ABO.sub.3 type perovskite structure in which potassium (K), sodium (Na), niobium (Nb), and manganese (Mn) are provided, and a second electrode which is formed on the piezoelectric layer. The manganese includes bivalent manganese (Mn.sup.2+), trivalent manganese (Mn.sup.3+), and tetravalent manganese (Mn.sup.4+). A molar ratio (Mn.sup.2+/Mn.sup.3++Mn.sup.4+) of the bivalent manganese to a sum of the trivalent manganese and the tetravalent manganese is equal to or greater than 0.31.

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. One or more patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the one or more electrodes and a planarized support layer is deposited over the sacrificial layer. The support layer is etched to form one or more cavities overlying the electrodes to expose the sacrificial layer. The sacrificial layer is etched to release the cavities around the electrodes. Then, a cap layer is fusion bonded to the support layer to enclose the electrodes in the support layer cavities.

A piezoelectric sensor, a manufacturing method thereof and an electronic device are provided. The piezoelectric sensor includes a substrate, an active layer, the active layer being disposed at a side of the substrate: a first electrode, the first electrode being disposed at a side of the active laver a wav from the substrate, and the first electrode including a plurality of sub-electrodes disposed at intervals: a piezoelectric layer, the piezoelectric layer being disposed at a side of the first electrode away from the active layer; and a second electrode, the second electrode being disposed at a side of the piezoelectric layer away from the first electrode. The active layer is configured to be capable of switching between an insulating state and a conducting state, and in the conducting state the active layer is capable of conducting the plurality of sub-electrodes.

A method for producing a ferroelectric polymer element includes: disposing one electrode on a substrate; applying polymer solution in which a polyvinylidene fluoride-based polymer is dissolved in a solvent including an aprotic polar solvent onto the one electrode by forme-based printing; firing the polymer solution to crystallize the polyvinylidene fluoride-based polymer, so that a ferroelectric layer is formed; and disposing the other electrode on the ferroelectric layer.

A method for forming a dielectric elastomer transducer of the present invention includes: a first electrode layer fixing step of fixing a first electrode layer to a target object; a dielectric elastomer layer fixing step of fixing a dielectric elastomer layer to the first electrode layer; and a second electrode layer fixing step of fixing a second electrode layer to the dielectric elastomer layer. This configuration ensures that the dielectric elastomer transducer highly conforms to the target object.

A piezoelectric element includes a first electrode; a piezoelectric layer, placed on or above the first electrode, containing potassium, sodium, niobium, titanium, and oxygen; and a second electrode placed on or above the piezoelectric layer.

Provided is a method for forming a ferroelectric film of a metal oxide having a fluorite-type structure at a low temperature of lower than 300° C., and a ferroelectric film obtained at a low temperature. The present invention provides a production method of a ferroelectric film comprising a crystalline metal oxide having a fluorite-type structure of an orthorhombic crystal phase, which comprises using a film sputtering method comprising sputtering a target at a substrate temperature of lower than 300° C., to deposit on the substrate a film of a metal oxide which is capable of having a fluorite-type structure of an orthorhombic crystal phase, and having a subsequent thermal history of said film of lower than 300° C.; or applying an electric field to said film after said deposition or after said thermal history of lower than 300° C. Also provided are the ferroelectric film, which is formed on an organic substrate, glass, or metal substrate, which can be used only at low temperatures, and a ferroelectric element and a ferroelectric functional element or device using the ferroelectric film.