A film structure body has: a substrate that is a silicon substrate including an upper surface composed of a (100) plane; an orientation film including a zirconium oxide film that is cubic crystal (100)-oriented on the upper surface; and a conductive film including a platinum film that is cubic crystal (100)-oriented on the orientation film.

An actuator includes a substrate, a diaphragm on the substrate, a lower electrode on the diaphragm, a piezoelectric body on the lower electrode, and an upper electrode on the piezoelectric body. A ratio of lead (Pb) and zirconium (Zr) in atomic percent (atm %) present at a grain boundary in the piezoelectric body satisfies a relation of Pb/Zr>1.7.

In some embodiments, the present disclosure relates to a processing tool that includes a wafer chuck disposed within a hot plate chamber and having an upper surface configured to hold a semiconductor wafer. A heating element is disposed within the wafer chuck and configured to increase a temperature of the wafer chuck. A motor is coupled to the wafer chuck and configured to rotate the wafer chuck around an axis of rotation extending through the upper surface of the wafer chuck. The processing tool further includes control circuitry coupled to the motor and configured to operate the motor to rotate the wafer chuck while the temperature of the wafer chuck is increased to form a piezoelectric layer from a sol-gel solution layer on the semiconductor wafer.

A functional ink that includes a precursor sol-gel solution and a solvent is provided. The precursor sol-gel solution is used for forming an oxide dielectric film having a perovskite structure represented by a general formula ABO.sub.3, and has been subjected to a partial hydrolysis process in which a viscosity change resulting from the partial hydrolysis process is controlled to be less than or equal to 50%, and water contained in the precursor sol-gel solution is controlled to be greater than or equal to 0.50 times and less than or equal to 10 times by molar ratio with respect to a B site atom contained in the precursor sol-gel solution. The functional ink has a metal oxide concentration and a viscosity that renders the functional ink suitable for being discharged from a nozzle of a liquid droplet discharge apparatus included in a thin film fabrication apparatus.

A piezoelectric thin film element having a first electrode, a second electrode and a piezoelectric thin film between the electrodes, wherein the thin film comprises a laminate having two or more piezoelectric thin film layers and wherein a first thin film layer is doped by one or more dopants and a second film layer is doped by one or more dopants and wherein at least one dopant of the second thin film layer is different from the dopant or dopants of the first thin film layer.

A residual stress in a PZT type ferroelectric film 12 formed on a substrate body 11 by a sol-gel process is −14 MPa to −31 MPa, and the ferroelectric film 12 is crystal oriented in a (100) plane.

Provided is a coating liquid for forming a piezoelectric thin film containing lead zirconate titanate, the coating liquid including a complex precursor containing at least three kinds of metal elements of Pb, Ti, and Zr, the coating liquid being free from an exothermic peak at a temperature of 450° C. or more, or having a heat generation amount at a temperature of from 400° C. to 450° C., which is larger than a heat generation amount at a temperature of from 450° C. to 500° C., in differential thermal analysis of the coating liquid.

Various examples are provided for multiferroic thin films. In one example, a multiferroic thin film device includes a thin film of multiferroic material and an electrode disposed on a side of the thin film of multiferroic material. The multiferroic material can be (Fe.sub.x,Sr.sub.1-x)TiO.sub.3 In another example, a method for producing a multiferroic thin film includes forming a multiferroic pre-cursor; disposing the multiferroic precursor on a substrate to form a multiferroic coating; pre-baking the multiferroic coating on the substrate to form a pre-baked multiferroic thin film; and annealing the pre-baked multiferroic thin film under an oxygen atmosphere to form a crystalized multiferroic thin film. One or more electrodes can be formed on the crystalized multiferroic thin film.

A process of forming an integrated circuit containing a piezoelectric thin film by forming a sol gel layer, drying in at least 1 percent relative humidity, baking starting between 100 and 225° C. increasing to between 275 and 425° C. over at least 2 minutes, and forming the piezoelectric thin film by baking the sol gel layer between 250 and 350° C. for at least 20 seconds, annealing between 650 and 750° C. for at least 60 seconds in an oxidizing ambient pressure between 700 and 1000 torr and a flow rate between 3 and 7 slm, followed by annealing between 650 and 750° C. for at least 20 seconds in a pressure between 4 and 10 torr and a flow rate of at least 5 slm, followed by ramping down the temperature.

A composition for forming a PZT-based piezoelectric film formed of Mn-doped composite metal oxides is provided, the composition including: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone, in which when a metal atom ratio in the composition is shown as Pb:Mn:Zr:Ti, the PZT-based precursors are contained so that a metal atom ratio of Pb is satisfied to be from 1.00 to 1.20, a metal atom ratio of Mn is satisfied to be equal to or greater than 0.002 and less than 0.05, a metal atom ratio of Zr is satisfied to be from 0.40 to 0.55, a metal atom ratio of Ti is satisfied to be from 0.45 to 0.60, and the total of Zr and Ti in a metal atom ratio is 1.