A method of forming an Al.sub.1-xSc.sub.xN film can include heating a substrate, in a reactor chamber, to a temperature range, providing a precursor comprising Sc to the reactor chamber, providing a dopant comprising Mg, C, and/or Fe to the reactor chamber, and forming an epitaxial Al.sub.1-xSc.sub.xN film on the substrate in the temperature range, the epitaxial Al.sub.1-xSc.sub.xN film including the dopant in a concentration in a range between about 1×10.sup.17/cm.sup.3 and about 2×10.sup.20/cm.sup.3 on the substrate.

A method for forming a MEMS device is provided. The method includes forming a stack of piezoelectric films and metal films on a base layer, wherein the piezoelectric films and the metal films are arranged in an alternating manner. The method also includes forming a first trench in the stack of the piezoelectric films and the metal films. The method further includes forming at least one void at the side wall of the first trench. In addition, the method includes forming a spacer structure in the at least one void. The method further includes forming a contact in the first trench after the formation of the spacer structure.

A method for forming a MEMS device is provided. The method includes forming a stack of layers on a base piezoelectric layer. The stack of layers includes a base metal film over the base piezoelectric layer; a first piezoelectric film over the base metal film; and a first metal film having an opening therein over the first piezoelectric film. The method also includes forming a trench in the stack of layers, wherein the trench passes through the opening in the first metal film but does not expose the base metal film; after forming the trench, forming a spacer structure under the first metal film but spaced apart from the base metal film; after forming the spacer structure, deepening the trench to expose the base metal film; and forming a contact in the trench.

The present invention relates to a piezoelectric fiber having excellent flexibility, the piezoelectric fiber employs a conductive fiber member as an inner electrode, on which a piezoelectric polymer layer, an outer electrode and a coating layer are sequentially formed, thereby having excellent flexibility and sufficient elasticity to be sewed, woven, knotted or braided. Therefore, the piezoelectric fiber can be applied in power supplies for a variety of sizes and types of wearable electronic devices, portable devices, clothing, etc. In addition, since the piezoelectric fiber has excellent piezoelectricity and durability because of the above-described structure, it can effectively convert deformation or vibration caused by external physical force into electric energy, and thus can replace existing ceramic-based and polymer piezoelectric bodies, etc. Furthermore, an economical and simple method of manufacturing a piezoelectric fiber having excellent piezoelectricity is provided.

The present disclosure relates to a precursor solution for the preparation of a ceramic of the BZT-αBXT type, where X is selected from Ca, Sn, Mn, and Nb, and α is a molar fraction selected in the range between 0.10 and 0.90, said solution comprising: 1) at least one barium precursor compound; 2) a precursor compound selected from the group consisting of at least one calcium compound, at least one tin compound, at least one manganese compound, and at least one niobium compound; 3) at least one anhydrous precursor compound of zirconium; 4) at least one anhydrous precursor compound of titanium; 5) a solvent selected from the group consisting of a polyol and mixtures of a polyol and a secondary solvent selected from the group consisting of alcohols, carboxylic acids, ketones, and mixtures thereof; and 6) a chelating agent, as well as method of using the same.

A method of making a solvent cast polymer composite film comprising (a) contacting barium titanate, a titanate coupling agent (TCA) and a mixing solvent to form a barium titanate and TCA solution; (b) dispersing at least a portion of the barium titanate and TCA solution to form TCA treated barium titanate; (c) contacting at least a portion of the TCA treated barium titanate with a polyetherimide and a casting solvent to form a polymer composite casting solution; (d) casting at least a portion of the polymer composite casting solution onto a casting substrate to form a solvent cast polymer composite solution; and (e) curing at least a portion of the solvent cast polymer composite solution to form the solvent cast polymer composite film.

A bulk-acoustic wave resonator includes: a substrate; and a resonator portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate. The piezoelectric layer is formed of aluminum nitride (AlN) containing scandium (Sc). The bulk-acoustic wave resonator satisfies the following expression: leakage current density×scandium (Sc) content<20. The leakage current density is a leakage current density of the piezoelectric layer in μA/cm2, and the scandium (Sc) content is a weight percentage (wt %) of scandium (Sc) in the piezoelectric layer.

A bulk-acoustic wave resonator includes a resonator, including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on a substrate; and an insertion layer disposed below the piezoelectric layer, and configured to partially elevate the piezoelectric layer and the second electrode, wherein the insertion layer may be formed of a material containing silicon (Si), oxygen (O), and nitrogen (N).

A method for producing a piezoelectric actuator including forming a vibration plate, forming a first electrode on the vibration plate, forming a piezoelectric layer on the first electrode, and forming a second electrode on the piezoelectric layer, wherein the forming the vibration plate has a single layer forming step including forming a metal layer containing zirconium by a gas phase method, and forming a metal oxide layer by firing the metal layer, the single layer forming step is repeated, thereby forming the vibration plate in which the metal oxide layers are stacked, and the metal oxide layer has a thickness less than 200 nm.

There are provided an acoustic wave transducing unit and a method for manufacturing the same, and an acoustic wave transducer. The acoustic wave transducing unit includes: a substrate; a first electrode on the substrate; a supporting portion on a side of the first electrode away from the substrate; a diaphragm layer on a side of the supporting portion away from the substrate; a release hole penetrating through at least the diaphragm layer; the supporting portion, the diaphragm layer and the first electrode define a vibration chamber, the vibration chamber is communicated with the release hole, the supporting portion is lattice-matched with the first electrode, the supporting portion is lattice-matched with the diaphragm layer; a material of the supporting portion can be decomposed into a metal simple substance and a gas under an action of laser; Photon Energy of the supporting portion is smaller than that of the diaphragm layer.