A power generation device manufacturing method and a power generation device are proposed. In one embodiment, the method includes (a) forming a halide perovskite active layer on a flexible substrate bent by a stress applied thereto and (b) releasing the stress applied to the substrate on which the halide perovskite active layer is formed, thereby unfolding the bent substrate. By applying a strain to the active layer of the power generation device and controlling the same, using the method described above, it is possible to improve the performance of the power generation device without changing the composition of the active layer or the configuration of the device.

A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.

[Object]

An object of the present invention is to provide a method for manufacturing an oxide single crystal substrate having less dispersion in characteristics within the substrate surface.

[Means to solve the Problems]

In the manufacture method of the present invention, a powder containing a Li compound is dispersed in a medium to form a slurry, and heat is applied while the slurry is in contact with the surface of the oxide single crystal substrate, so as to diffuse Li into the substrate from the surface thereof to effect a modification of the substrate; or after the slurry is brought into contact with the surface of the oxide single crystal substrate, the oxide single crystal substrate is buried in a powder containing the Li compound, and heat is applied to effect the diffusion of Li in the substrate from the surface thereof whereby a modification of the substrate occurs.

A crystal pattern forming method includes: an electromagnetic wave absorbing layer forming process for forming an electromagnetic wave absorbing layer on one of surfaces of a substrate; an amorphous film forming process for forming an amorphous film on the electromagnetic wave absorbing layer; a mask forming process for forming an electromagnetic wave blocking mask for blocking an electromagnetic wave on the other one of the surfaces of the substrate; and a crystallizing process for causing the substrate to be irradiated with the electromagnetic wave from the other one of the surfaces of the substrate through the electromagnetic wave blocking mask to crystallize a given region in the amorphous film. In the mask forming process, a recessed structure is formed on the other one of the surfaces of the substrate, by selectively removing the other one of the surfaces of the substrate to form a recessed portion.

A piezoelectric material contains: a first component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than a rhombohedral crystal in a single composition, has a Curie temperature Tc2 higher than Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc3 equal to or higher than Tc2, and is a lead-free-system composite oxide that has a perovskite-type structure and is different from the first component. When a molar ratio of the third component to the sum of the first component and the third component is α and α×Tc3+(1−α)×Tc1 is Tc4, |Tc4−Tc2| is 50° C. or lower.

A piezoelectric thin film is formed through sputtering and consists essentially of scandium aluminum nitride. The carbon atomic content is 2.5 at % or less. When producing the piezoelectric thin film, scandium and aluminum are sputtered simultaneously on a substrate from a scandium aluminum alloy target material having a carbon atomic content of 5 at % or less in an atmosphere where at least nitrogen gas exists. The sputtering may be conducted also by applying an ion beam on an opposing surface of the alloy target material at an oblique angle. Moreover, aluminum and scandium may be also sputtered simultaneously on the substrate from an Sc target material and an Al target material. As a result, a piezoelectric thin film which exhibits excellent piezoelectric properties and a method for the same can be provided.

Aspects of the present disclosure describe systems, methods, and structures that scavenge mechanical energy to provide electrical energy to a wearable, where the mechanical energy is scavenged by a bending-strain-based transducer that includes a non-resonant energy harvester. By employing a non-resonant energy harvester that operates in bending mode, more electrical energy can be generated that possible with prior-art energy harvesters. In some embodiments the bending-strain-based transducer also includes a sensor and/or a haptic device. Some transducers in accordance with the present disclosure comprise a piezoelectric layer comprising a low-K piezoelectric material, such as aluminum nitride, which enables generation of higher voltage and power/energy output and/or a thinner transducer. As a result, transducers in accordance with the present disclosure can be included in wearables for which large transducer thickness would be problematic, such as sole members (e.g., shoe insoles, midsoles or outsoles), garments, bras, handbags, backpacks, and the like.

Aspects of the present disclosure describe systems, methods, and structures that scavenge mechanical energy to provide electrical energy to a wearable, where the mechanical energy is scavenged by a bending-strain-based transducer that includes a non-resonant energy harvester. By employing a non-resonant energy harvester that operates in bending mode, more electrical energy can be generated that possible with prior-art energy harvesters. In some embodiments the bending-strain-based transducer also includes a sensor and/or a haptic device. Some transducers in accordance with the present disclosure comprise a piezoelectric layer comprising a low-K piezoelectric material, such as aluminum nitride, which enables generation of higher voltage and power/energy output and/or a thinner transducer. As a result, transducers in accordance with the present disclosure can be included in wearables for which large transducer thickness would be problematic, such as shoe insoles, midsoles or outsoles, garments, bras, handbags, backpacks, and the like.

A piezoelectric film layered structure includes a base, and a ScAlN film formed on the base. The ScAlN film has an unpaired electron density within a range between 1.7×10.sup.18 electrons/cm.sup.3, inclusive, and 1.1×10.sup.19 electrons/cm.sup.3, inclusive.

An apparatus for atomic scale processing includes: a reactor having inner and outer surfaces; where at least a portion of the inner surfaces define an internal volume of the reactor; a fixture assembly positioned within the internal volume of the reactor having a surface configured to hold a substrate within the internal volume of the reactor; a vacuum pump in communication with the reactor; at least one reactor pressure control device; and a controller in communication with the at least one reactor pressure control device, where the controller is configured to activate and deactivate the at least one reactor pressure control device to increase and decrease the pressure within the internal volume of the reactor, where the increase in the pressure within the internal volume of the reactor increases the temperature of the substrate from an initial temperature.