An array substrate (100) includes a first type of electroluminescent diode (110). The first type of electroluminescent diode (110) includes a first electrode (111), alight emitting structure layer (112) comprising nanoparticles (114), and a second electrode (113) disposed in a stacked manner. The nanoparticles (114) may be configured to increase luminous efficiency of the first type of electroluminescent diode (110).

A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure include dopants of a first conductivity type with different doping concentrations. Further, the second doping regions of the plurality of second doping regions of the first doping structure include dopants of a second conductivity type with different doping concentrations. At least one first doping region of the plurality of first doping regions of the first doping structure partly overlaps at least one second doping region of the plurality of second doping regions of the first doping structure causing an overlap region arranged at the main surface.

A method of manufacturing an organic light-emitting device includes a heat treatment performed at a set or predetermined temperature range when forming a hole transport layer utilizing a solution process. When an emission layer is formed thereon utilizing a solution process, a mixed layer may be formed to a suitable thickness for improving hole injection into the emission layer. An organic light-emitting device may be manufactured utilizing the method.

A display panel including a first array substrate, a first pad, and a second pad is provided. The first array substrate includes a first substrate, a first active element, a first display element, and a second display element. The first active element is disposed on the top surface of the first substrate. The first display element and the second display element are disposed on the top surface of the first substrate. The first display element is electrically connected to the first active element. The first pad and the second pad are disposed on the bottom surface of the first substrate. The first active element is electrically connected to the first pad. Each of the first pad and the second pad includes an embedded part and a protruded part. The embedded part is located in the first substrate. The protruded part is protruded from the bottom surface of the first substrate.

A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.

Provided is a display device including a first base substrate, a plurality of pixels disposed on the first base substrate and each of which including a pixel area and a non-pixel area around the pixel area, a second base substrate facing the first base substrate with the pixels therebetween, and a plurality of light conversion layers disposed under the second base substrate and overlapping the pixel areas of the pixels, wherein the second base substrate includes a first part overlapping the non-pixel area, and a second part around the first part, wherein a refractive index of the first part is different from a refractive index of the second part.

The present invention discloses a patterned perovskite film, a preparation method thereof, and a display device. The method includes mixing a perovskite precursor and a photo-initiated polymer monomer, and realizing polymerization of a part of a predetermined area under shielding of a photomask, that is, the formed perovskite crystals are encapsulated by the formed polymer with formation of the patterned perovskite film.

A method of manufacturing an electroluminescent device includes providing a substrate including a first pixel and a second pixel configured to emit different colors; forming a first light-emitting layer and a first protecting layer over the substrate through a first opening of a first sacrificial layer; forming a second light-emitting layer and a second protecting layer over the substrate through a second opening of a second sacrificial layer; removing the first sacrificial layer together with the second sacrificial layer; and removing the first protecting layer from the first light-emitting layer, and the second protecting layer from the second light-emitting layer.

A method of manufacturing an organic light-emitting display apparatus includes: forming a lift-off layer on a substrate including a first electrode, the lift-off layer including a fluoropolymer; forming a pattern layer on the lift-off layer; etching the lift-off layer between patterns of the pattern layer by utilizing a first solvent to expose the first electrode; forming an organic functional layer on the first electrode and the pattern layer, the organic functional layer including an emission layer; removing remaining portions of the lift-off layer by utilizing a second solvent; and forming a second electrode on the organic functional layer.

A method of manufacturing a display device having an organic EL device includes the steps of: forming an organic EL device over a substrate; and forming a protection film so as to cover the organic EL device. The protection film is made of a laminated film of a first insulating film containing Si, a second insulating film containing Al and a third insulating film containing Si. The step of forming the protection film includes the steps of: forming the first insulating film by a plasma CVD method so as to cover the organic EL device; forming the second insulating film over the first insulating film by an ALD method; and forming the third insulating film over the second insulating film by a plasma CVD method.