A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.

A thin film transistor (TFT) array substrate includes: a substrate; a first insulation layer on the substrate; a capacitor including a lower electrode on the first insulation layer, and an upper electrode arranged to overlap with the whole lower electrode and having an opening, and the upper electrode is insulated from the lower electrode by a second insulation layer; an inter-layer insulation film covering the capacitor; a node contact hole in the inter-layer insulation film and the second insulation layer, and within the opening; and a connection node on the inter-layer insulation film and electrically coupling the lower electrode and at least one TFT to each other through the node contact hole.

A display device according to the present disclosure has a resonator structure in which a light reflector and a semi-transmissive plate are disposed at a distance that differs for each luminescent color. In this resonator structure, a light-emitting function layer including a light-emitting layer, a transparent cathode electrode, and a protective film that protects the cathode electrode are laminated in order between the light reflector and the semi-transmissive plate. In addition, the semi-transmissive plate is formed on the protective film.

The present specification relates to a double spiro structure compound, and an organic light emitting device comprising the same.

According to one embodiment, a light-emitting element includes a substrate, a first electrode, a second electrode, and a light-emitting layer. The substrate is light-transmissive. The second electrode is provided between the first electrode and a portion of the substrate. The second electrode is light-transmissive. A light-emitting layer is provided between the first electrode and the second electrode. The substrate includes a first region and a second region. The first region overlaps at least a portion of the light-emitting layer in a first direction, the first direction is from the second electrode toward the first electrode. The second region is provided around the first region along a plane perpendicular to the first direction. The substrate has an opening provided in at least a portion of the second region.

An organic light-emitting display apparatus, including: a first electrode disposed on the substrate; a pixel defining layer covering an edge of the first electrode; a residual layer disposed on the first electrode and the pixel defining layer, the residual layer comprising a fluoropolymer; a first organic functional layer comprising a first light emitting layer disposed on the residual layer on the first electrode; and a second electrode disposed on the first organic functional layer.

An information processing device including: a memory, and a processor coupled to the memory and the processor configured to: discover an equipment coupled to the information processing device, based on an equipment identifier associated with an input field in form information, acquire data from the equipment, and insert, into the input field, the data acquired from the equipment.

An organic light emitting display device includes a plurality of pixels each having a pixel driving circuit. Each of the pixels includes an organic light emitting diode and a driving TFT that controls driving of the organic light emitting diode and includes an active layer of low temperature poly-silicon, a gate node, a source node, and a drain node. The pixels include first to fifth switching TFTs electrically connected to the driving TFT and each including an active layer of an oxide semiconductor, a gate node, a source node, and a drain node. Further, the pixels include a storage capacitor connected between the gate node of the driving TFT and the source node of the fifth switching TFT and a coupling capacitor electrically connected in series to the storage capacitor and configured to cause capacitive coupling to supply a bootstrapped voltage to the gate node of the driving TFT.

A display device includes a substrate including a display configured to display an image and a non-display area disposed on at least one side of the display area. A plurality of pixels is disposed in the display area. An organic insulating layer is disposed on the substrate. A pixel defining layer is disposed on the organic insulating layer. A sealing layer at least partially covers the display area and the non-display area and includes an inorganic material. The organic insulating layer and the pixel defining layer have a valley disposed therein. The valley is formed by removing portions of the organic insulating layer and the pixel defining layer along a circumference of the display area.

A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/λ, wherein λ represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.