There is provided a method, including obtaining information indicating at least one reference characteristic; obtaining input data, the input data relating to the output of the tunable filter; determining, based on the input data, at least one characteristic of the tunable filter; upon detecting that the at least one determined characteristic does not match with the at least one reference characteristic, determining tuning instructions for the tunable filter; and applying the tuning instructions in adjusting the tunable filter.

There is provided a method, including obtaining information indicating at least one reference characteristic; obtaining input data, the input data relating to the output of the tunable filter; determining, based on the input data, at least one characteristic of the tunable filter; upon detecting that the at least one determined characteristic does not match with the at least one reference characteristic, determining tuning instructions for the tunable filter; and applying the tuning instructions in adjusting the tunable filter.

A high-frequency module includes a semiconductor chip device that is mounted on an external circuit substrate by wire bonding. A switch forming section, a power amplifier forming section and a low noise amplifier forming section, realized by a group of FETs, which are active elements, are formed in the semiconductor chip device. Flat plate electrodes, which form capacitors are formed in the semiconductor chip device. Conductor wires that connect the external circuit substrate and the semiconductor chip device function as inductors. A group of passive elements that includes inductors and capacitors is formed. As a result, a high-frequency module that can be reduced in size while still obtaining the required transmission characteristic is realized.

A high-frequency module includes a semiconductor chip device that is mounted on an external circuit substrate by wire bonding. A switch forming section, a power amplifier forming section and a low noise amplifier forming section, realized by a group of FETs, which are active elements, are formed in the semiconductor chip device. Flat plate electrodes, which form capacitors are formed in the semiconductor chip device. Conductor wires that connect the external circuit substrate and the semiconductor chip device function as inductors. A group of passive elements that includes inductors and capacitors is formed. As a result, a high-frequency module that can be reduced in size while still obtaining the required transmission characteristic is realized.

The present invention discloses a four-mode defected ground structure resonator, comprising a metal dielectric substrate and a defected ground unit which is etched in one surface of the metal dielectric substrate; the shape of the defected ground unit is axially symmetric about a first central axis of the defected ground unit, and also the shape of the defected ground unit is axially symmetric about a second central axis of the defected ground unit; the first defected ground unit is provided with H-shape or quasi H-shape, the second defected ground unit is provided with L-shape, quasi L-shape, U-shape or quasi U-shape. The four-mode defected ground structure resonator of the present invention is provided with four types of resonant modes, and the four types of resonant modes are provided with good tunability.

A high-frequency transmission device includes first and second resonators as ring-shaped wires each having an opening part at a part thereof, first and second input/output terminals each electrically connected to both resonators, a first ground shield formed on a plane different from planes on which both resonators are arranged, a second ground shield formed on a plane different from the planes on which both resonators and the first ground shield are arranged, and first and second ground wires each formed to surround peripheries of both resonators. The ground shields and the ground wires are respectively connected to each other. A dielectric wire is present between both ground wires, and the ground wires are not electrically connected to each other.

Device and a method of forming an integrated circuit (IC) that offers protection against ESD in RE applications is disclosed. The device includes a transmission line (TL) coupled to a signal pad. The TL is a short circuited stub that is configured as an ESD protection device and as a band pass filter in dependence of a center frequency of the band pass filter. The TL is configured to pass through a signal in response to a frequency of the signal being within an allowable range of frequencies of the band pass filter. The TL functioning as an ESD protection device is configured to shunt the signal in response to the frequency being outside the allowable range. The IC may include an array of control switches that are operable to change an electrical length L of the TL. The center frequency is tunable by controlling the electrical length L.

A signal transmission apparatus includes: a first lead frame; a second lead frame spaced from the first lead frame; a primary semiconductor chip electrically connected to the first lead frame; a secondary semiconductor chip electrically connected to the second lead frame; and a signal isolator through which a signal is isolatedly transmitted from the primary semiconductor chip to the secondary semiconductor chip, the signal isolator having a first main surface that is bonded to both the first lead frame and the second lead frame.

A signal transmission apparatus includes: a first lead frame; a second lead frame spaced from the first lead frame; a primary semiconductor chip electrically connected to the first lead frame; a secondary semiconductor chip electrically connected to the second lead frame; and a signal isolator through which a signal is isolatedly transmitted from the primary semiconductor chip to the secondary semiconductor chip, the signal isolator having a first main surface that is bonded to both the first lead frame and the second lead frame.

An electrical filter structure for forwarding an electrical signal from a first port, e.g. P1, to a second port, e.g. P2, in a frequency selective manner, wherein the filter is a microwave filter, the electrical filter structure comprising: a plurality of pairs of an open stub and a short-circuited stub coupled electrically in parallel to a transmission line comprising a plurality of transmission line portions at a plurality of respective junctions between adjacent transmission line portions, e.g. Cross junction; and wherein the first port is connected with a first of the junctions having a first pair comprising a first open stub and a first short-circuited stub; wherein the second port is connected with a last of the junctions having a last pair comprising a last open stub and a last short-circuited stub; wherein lengths of the pair of the open stub and the short-circuited stub coupled to a same of the junctions are chosen such that electrical lengths of the open stub and short-circuited stub of the respective pairs are equal within a tolerance of +/−10%.