In examples, a semiconductor package comprises a ceramic substrate and a horizontal metal layer covered by the ceramic substrate. The metal layer is configured to carry signals in the 5 GHz to 38 GHz frequency range. The package also includes a vertical castellation on an outer surface of the ceramic substrate, the castellation coupled to the metal layer and having a height ranging from 0.10 mm to 0.65 mm.

A pseudo coaxial line is connected to a first coplanar line at a first connecting portion and connected to a second coplanar line at a second connecting portion. The first coplanar line and the second coplanar line are, for example, differential coplanar lines. Also, a back surface concave portion in which the second connecting portion of the pseudo coaxial line is exposed is provided. The back surface concave portion is formed into an almost semicircular shape, an almost semielliptical shape, or a rectangular shape in a planar view.

A first signal lead pin is bent such that one end is connected to a first signal line of a differential coplanar line, and the other end is apart from a mounting surface. A second signal lead pin is bent such that one end is connected to a second signal line of the differential coplanar line, and the other end is apart from the mounting surface. A ground lead pin is bent such that one end is connected to a ground line of the differential coplanar line, and the other end is apart from the mounting surface.

Disclosed is a measurement system for analysing RF signals. The measurement system includes an optically transparent enclosure including an optically pumpable gas, and a printed circuit board, PCB including an electrical transmission line for guiding the RF signal to be analyzed through the enclosure and a reflective planar face. The measurement system includes an optical pump for emitting preferably coherent light onto the reflective planar face, and a detector for detecting an optical property of the emitted light being reflected by the reflective planar face. This provides a better laser/microwave overlap in atomic vapor quantum sensing setups, where it is crucial to overlap the regions with highest laser intensity and microwave field strength.

A transmission line includes a substrate including insulator layers, a mounting electrode on a front layer of the substrate, a signal conductor, a first ground conductor, a first connecting electrode that electrically connects the mounting electrode and the signal conductor and is between the signal conductor and the first ground conductor in a laminating direction, a first inter-layer connecting conductor that is electrically connected between the mounting electrode and the first connecting electrode and is bonded to the first connecting electrode, and a second inter-layer connecting conductor that is electrically connected between the signal conductor and the first connecting electrode, is bonded to the first connecting electrode, and does not overlap with the first inter-layer connecting conductor when viewed in the laminating direction. The first ground conductor does not overlap with at least a portion of the first connecting electrode when viewed in the laminating direction.

A connection assembly for an antenna includes a printed circuit board and a coaxial cable connected to the printed circuit board. A transmission trace and a solder pad are provided on the printed circuit board. An opening for receiving an end portion of the coaxial cable is also provided in the printed circuit board, and an exposed outer conductor of the end portion extends into the opening, and an exposed inner conductor reaches the solder pad. The connection assembly further includes a ground structure, which is electrically connected to a ground metal layer on a second surface of the printed circuit board, and the ground structure is at least partially arranged on both sides of the exposed inner conductor and/or the exposed outer conductor.

A semiconductor device includes a first transmission line. The semiconductor device includes a second transmission line. The semiconductor device includes a high-k dielectric material between the first transmission line and the second transmission line, wherein the high-k dielectric material partially covers each of the first transmission line and the second transmission line. The semiconductor device further includes a dielectric material directly contacting the high-k dielectric material, wherein the dielectric material has a different dielectric constant from the high-k dielectric material, and the dielectric material directly contacts each of the first transmission line and the second transmission line.

A high frequency switch configured to switch paths of differential signals arranged in an integrated circuit. The high frequency switch includes a pair of pole terminals and a plurality of pairs of throw terminals. The pair of pole terminals constitutes one port. Each pair of throw terminals constitutes another port.

A high frequency switch configured to switch paths of differential signals arranged in an integrated circuit. The high frequency switch includes a pair of pole terminals and a plurality of pairs of throw terminals. The pair of pole terminals constitutes one port. Each pair of throw terminals constitutes another port.

A multilayer board includes a laminated insulating body, signal conductors inside the laminated insulating body and extending in a transmission direction, and ground conductors sandwiching each of the signal conductors in a lamination direction via the insulating base material layers. The multilayer board includes a parallel extending portion in which the signal conductors extend parallel and that includes signal conductors arranged separately from each other in a direction orthogonal to the transmission direction in a planar view in the lamination direction, and a signal conductor overlapping with the signal conductor in a planar view in the lamination direction and arranged separately from the signal conductor in the lamination direction. The parallel extending portion includes first and second regions arranged separately in a direction orthogonal to the transmission direction in a planar view in the lamination direction.