The apparatus and the method for terahertz-based reading of data recorded in the Ruderman-Kittel-Kasuya-Yosida (RKKY)-based magnetic memory provided. The apparatus comprises: a Terahertz Magnon Laser configured to generate THz magnons; wherein the Terahertz Magnon Laser further comprises a Magnon Gain Medium (MGM) configured to support generation of non-equilibrium Terahertz magnons after the electric current is applied across the Terahertz Magnon Laser. The apparatus further comprises a magnetic reading bridge coupled to the Magnon Gain Medium of the Terahertz Magnon Laser; the magnetic reading bridge also coupled to a Ruderman-Kittel-Kasuya-Yosida (RKKY)-based magnetic memory cell; wherein magnetization of the magnetic reading bridge is induced by the overall magnetization of the RKKY)-based magnetic memory cell, and wherein the overall magnetization of the RKKY)-based magnetic memory cell is dependent on the information bit encoded into the magnetic memory cell, and wherein the encoded bit ‘1’ corresponds to the higher overall magnetization of the memory cell, and wherein the encoded bit ‘0’ corresponds to the lower overall magnetization of the memory cell. The apparatus further comprises a terahertz demodulator configured to demodulate the generated THz reading signal; wherein the higher detected THz frequency corresponds to reading bit ‘1’ encoded into the RKKY-based magnetic memory cell; and wherein the lower detected THz frequency corresponds to reading bit ‘0’ encoded into the RKKY-based magnetic memory cell.

The apparatus and the method for terahertz-based reading of data recorded in the Ruderman-Kittel-Kasuya-Yosida (RKKY)-based magnetic memory provided. The apparatus comprises: a Terahertz Magnon Laser configured to generate THz magnons; wherein the Terahertz Magnon Laser further comprises a Magnon Gain Medium (MGM) configured to support generation of non-equilibrium Terahertz magnons after the electric current is applied across the Terahertz Magnon Laser. The apparatus further comprises a magnetic reading bridge coupled to the Magnon Gain Medium of the Terahertz Magnon Laser; the magnetic reading bridge also coupled to a Ruderman-Kittel-Kasuya-Yosida (RKKY)-based magnetic memory cell; wherein magnetization of the magnetic reading bridge is induced by the overall magnetization of the RKKY)-based magnetic memory cell, and wherein the overall magnetization of the RKKY)-based magnetic memory cell is dependent on the information bit encoded into the magnetic memory cell, and wherein the encoded bit ‘1’ corresponds to the higher overall magnetization of the memory cell, and wherein the encoded bit ‘0’ corresponds to the lower overall magnetization of the memory cell. The apparatus further comprises a terahertz demodulator configured to demodulate the generated THz reading signal; wherein the higher detected THz frequency corresponds to reading bit ‘1’ encoded into the RKKY-based magnetic memory cell; and wherein the lower detected THz frequency corresponds to reading bit ‘0’ encoded into the RKKY-based magnetic memory cell.

An apparatus for generation of tunable terahertz radiation is provided. The apparatus comprises: a plurality of terahertz magnon laser generators, whereas at least one such terahertz magnon laser generator comprises a multilayer column, and a terahertz transparent medium separating at least two such terahertz magnon laser generators. At least one such multilayer column further comprises: a substrate, a bottom electrode coupled with the substrate, a bottom layer coupled with the bottom electrode, a tunnel junction coupled with the bottom layer, a top layer coupled with the tunnel junction, a pinning layer coupled with the spin injector, and a top electrode coupled with the pinning layer.

An apparatus for generation of tunable terahertz radiation is provided. The apparatus comprises: a plurality of terahertz magnon laser generators, whereas at least one such terahertz magnon laser generator comprises a multilayer column, and a terahertz transparent medium separating at least two such terahertz magnon laser generators. At least one such multilayer column further comprises: a substrate, a bottom electrode coupled with the substrate, a bottom layer coupled with the bottom electrode, a tunnel junction coupled with the bottom layer, a top layer coupled with the tunnel junction, a pinning layer coupled with the spin injector, and a top electrode coupled with the pinning layer.

A method for tuning the frequency of THz radiation is provided. The method utilizes an apparatus comprising a spin injector, a tunnel junction coupled to the spin injector, and a ferromagnetic material coupled to the tunnel junction. The ferromagnetic material comprises a Magnon Gain Medium (MGM). The method comprises the step of applying a bias voltage to shift a Fermi level of the spin injector with respect to the Fermi level of the ferromagnetic material to initiate generation of non-equilibrium magnons by injecting minority electrons into the Magnon Gain Medium. The method further comprises the step of tuning a frequency of the generated THz radiation by changing the value of the bias voltage.

Embodiments of the microwave amplification system are described. In an embodiment, a microwave amplification system includes a microwave amplifier that contains a paramagnetic material with an impurity. The impurity has a plurality of nuclear spin and electron spin-based energy levels. The system includes an input to receive a pumping signal which is transmitted to the microwave amplifier to cause a population inversion in the impurity and excite it to one of the nuclear spin and electron spin-based energy levels. The system further includes another input to receive an input signal to be amplified by the microwave amplifier, the input signal having a lower power than the pumping signal. Once transmitted to the microwave amplifier, the input signal is amplified by the excited state of the impurity in the microwave amplifier thereby generating an amplified signal.

Embodiments of the microwave amplification system are described. In an embodiment, a microwave amplification system includes a microwave amplifier that contains a paramagnetic material with an impurity. The impurity has a plurality of nuclear spin and electron spin-based energy levels. The system includes an input to receive a pumping signal which is transmitted to the microwave amplifier to cause a population inversion in the impurity and excite it to one of the nuclear spin and electron spin-based energy levels. The system further includes another input to receive an input signal to be amplified by the microwave amplifier, the input signal having a lower power than the pumping signal. Once transmitted to the microwave amplifier, the input signal is amplified by the excited state of the impurity in the microwave amplifier thereby generating an amplified signal.

A thermo-electric cooling (TEC) system is presented for cooling of a device, such a laser for example. The TECT system comprises first and second heat pumping assemblies, and a control unit associated at least with said second heat pumping assembly. Each heat pumping assembly has a heat source from which heat is pumped and a heat drain through which pumped heat is dissipated. The at least first and second heat pumping assemblies are arranged in a cascade relationship having at least one thermal interface between the heat source of the second heat pumping assembly and the heat drain of the first heat pumping assembly, the heat source of the first heat pumping assembly being thermally coupled to the electronic device which is to be cooled by evacuating heat therefrom. The control unit is configured and operable to carry out at least one of the following: (i) operating said second heat pumping assembly to provide a desired temperature condition such that temperature of the heat drain of said first heat pumping assembly is either desirably low or by a certain value lower than temperature of the heat source of said first heat pumping assembly; and (ii) operating said second heat pumping assembly to maintain predetermined temperature of said thermal interface.

A thermo-electric cooling (TEC) system is presented for cooling of a device, such a laser for example. The TECT system comprises first and second heat pumping assemblies, and a control unit associated at least with said second heat pumping assembly. Each heat pumping assembly has a heat source from which heat is pumped and a heat drain through which pumped heat is dissipated. The at least first and second heat pumping assemblies are arranged in a cascade relationship having at least one thermal interface between the heat source of the second heat pumping assembly and the heat drain of the first heat pumping assembly, the heat source of the first heat pumping assembly being thermally coupled to the electronic device which is to be cooled by evacuating heat therefrom. The control unit is configured and operable to carry out at least one of the following: (i) operating said second heat pumping assembly to provide a desired temperature condition such that temperature of the heat drain of said first heat pumping assembly is either desirably low or by a certain value lower than temperature of the heat source of said first heat pumping assembly; and (ii) operating said second heat pumping assembly to maintain predetermined temperature of said thermal interface.

A spin torque oscillator and a method of making same. The spin torque oscillator is configured to generate microwave electrical oscillations without the use of a magnetic field external thereto, the spin torque oscillator having one of a plurality of input nanopillars and a nanopillar having a plurality of free FM layers.