A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a first resonator and a second resonator, the first and second resonators having parallel resonator directions along a longitudinal direction and being monolithically integrated into the semiconductor laser diode, wherein the first resonator includes at least a part of a semiconductor layer sequence having an active layer and an active region configured to be electrically pumped to generate a first light, wherein the longitudinal direction is parallel to a main extension plane of the active layer, and wherein the second resonator has an active region with a laser-active material configured to be optically pumped by at least a part of the first light to produce a second light which is partially emitted outwards from the second resonator.

A system includes a master oscillator configured to generate a low-power optical beam. The system also includes a planar waveguide (PWG) amplifier configured to receive the low-power optical beam and generate a high-power optical beam having a power of at least about ten kilowatts. The PWG amplifier includes a single laser gain medium configured to generate the high-power optical beam. The single laser gain medium can reside within a single amplifier beamline of the system. The master oscillator and the PWG amplifier can be coupled to an optical bench assembly, and the optical bench assembly can include optics configured to route the low-power optical beam to the PWG amplifier and to route the high-power optical beam from the PWG amplifier. The PWG amplifier could include a cartridge that contains the single laser gain medium and a pumphead housing that retains the cartridge.

The present disclosure describes an optical waveguide provided with an incident side reflection film and an emission side reflection film to resonate light incident via the incident side reflection film and formed to penetrate from the incident side reflection film to the emission side reflection film for propagating resonated light. The disclosure also includes a substrate to which the optical waveguide is formed from a top surface thereof and a first protection member and a second protection member formed with a material corresponding to a material of the substrate, wherein the first protection member and the second protection member are arranged on the optical waveguide such that one end facet of the first protection member forms an identical plane with a first end facet of the substrate including an optical incident end.

Core-cladding planar waveguide (PWG) structures and methods of making and using same. The core-cladding PWG structures can be synthesized by hydride vapor phase epitaxy and processed by mechanical and chemical-mechanical polishing. An Er doping concentration of [Er] between 1×10.sup.18 atoms/cm.sup.3 and 1×10.sup.22 atoms/cm.sup.3 can be in the core layer. Such PWGs have a core region that can achieve optical confinement between 96% and 99% and above.

A system includes a laser system having a master oscillator and a planar waveguide (PWG) amplifier having one or more laser diode pump arrays, a PWG pumphead, input optics, and output optics. The PWG pumphead is configured to receive a low-power optical beam from the master oscillator and generate a high-power optical beam. The PWG pumphead includes a laser gain medium, a cartridge, and a pumphead housing. The cartridge is configured to receive and retain the laser gain medium, and the cartridge includes one or more cooling channels configured to transport coolant in order to cool the laser gain medium. The pumphead housing is configured to receive and retain the cartridge, where the cartridge is removable from the housing.

An optoelectronic signal translating device having a region containing rare earth or transition metal ions for generation of radiation of a predetermined wavelength. Said region includes an organic complex comprising a ligand adapted to enhance the emission of radiation and a chromophore separately co-operable with a radiation source of wavelength not greater than that of said predetermined desired radiation. Said chromophore can be excited to cross-couple with the upper permitted energy state of said rare earth or transition metal ions, thereby generating said predetermined desired radiation by subsequent decay of said ions to the permitted lower energy state.

A tunable microwave source based on dual-wavelength lasing of a single optical whispering gallery microcavity includes a dual-wavelength laser having the single optical whispering gallery microcavity for generating dual-wavelength lasing with adjustable spacing, narrow linewidth and low threshold; an optical fiber or waveguide amplifier for optical signal amplification; an optical filter for optical signal and noise filtration; and a high-speed detector for generating a tunable microwave signal with narrow bandwidth. The dual-wavelength laser includes a pump source, the optical whispering gallery microcavity, an optical waveguide or a tapered optical fiber, a microcavity substrate, and a gold electrode pair. The frequency spacing of the dual-wavelength lasing is tuned by adjusting the external voltage of the gold electrode pair.

Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

A solid-state optical amplifier is described, having an active core and doped cladding in a single chip. An active optical core runs through a doped cladding in a structure formed on a substrate. A light emitting structure, such as an LED, is formed within and/or adjacent to the optical core. The cladding is doped, for example, with erbium or other rare-earth elements or metals. Several exemplary devices and methods of their formation are given.

A configuration is provided with a laser medium 1 of a refractive index nc that is an isotropic medium and includes an upper surface and a lower surface, where at least one of the upper surface and the lower surface is bonded with a cladding 2 having a refractive index satisfying a relationship of no<nc<ne or ne<nc<no. This allows selective output of only polarized light generated by a refractive index in the cladding 2 smaller than the refractive index nc at a desired wavelength (e.g. 1535 nm) which can be implemented by using the isotropic medium.