The present invention makes it possible to improve excitation efficiency in a fiber laser device provided with a TFB having an injection optical fiber not connected to an excitation light source. This fiber laser device is provided with: a plurality of excitation light sources, at least one fiber bundle that injects excitation light from the plurality of excitation light sources from a plurality of injection optical fibers and couples the excitation light to one optical fiber; and a cavity that introduces the excitation light coupled by the fiber bundle and amplifies and emits laser light. The number of the plurality of injection optical fibers of the fiber bundle is larger than the number of the plurality of excitation light sources, and a loop part is configured by connecting surplus injection optical fibers to which the excitation light is not injected among the plurality of injection optical fibers of the fiber bundle.

A photonic device is configured with a photonic integrated circuit (PIC), a plurality of fiber-based gain mediums in optical communication with the PIC, and at least one optical pump outputting pump light coupled into two or more gain mediums. At least one of the fiber-based gain media and the PIC form a hybrid resonant optical cavity there between operative to lase light into the PIC. The gain media further include one or more fiber amplifiers amplifying light signals coupled into and decoupled from the PIC. The photonic device is integrated with Si photonic passive and active photonic elements, while ail fiber links between the gain media and PIC are free from these elements.

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

A Raman pumping device (10) for amplifying a data optical signal in a fiber optic transmission system, comprising first and second ports (12a, 12b) through which the data optical signal may respectively enter and exit the Raman pumping device (10), a Raman pump source (14) for generating a Raman pump signal, and at least one combiner (16) for combining the Raman pump signal with the data optical signal. The Raman pumping device (10) allows for selectively combining the Raman pump signal generated by the same Raman pump source (14), or at least parts of the same Raman pump source (14) codirectionally or counterdirectionally with the data optical signal.

The present invention addresses the problem that, when an optical amplification device having a plurality of optical transmission paths, such as multi-core optical fibers, is used for bidirectional communication, it is difficult to construct an optical transmission system optimized for all of signal lights having different transmission directions. The optical amplification device of the present invention comprises: an optical guide means having a plurality of optical transmission paths including an optical amplification medium having a gain in the wavelength band of a signal light; an excitation light introducing means for introducing excitation light for exciting the optical amplification medium into the optical guide means from both ends of the optical guide means; and a residual excitation light introducing means for introducing residual excitation light output from both ends of the optical guide means and having a wavelength component of the excitation light into the optical guide means.

There is described a fiber laser system generally having a pump laser generating a pump laser beam; and a length of optical fiber optically coupled to the pump laser, the length of optical fiber having: a laser cavity having a cavity path, a first fiber Bragg grating having a first reflectivity profile, a second filter having a second filter profile, and an optical gain region between the first fiber Bragg grating and the second filter along the cavity path, the first reflectivity profile being spectrally detuned from the second filter profile, the first fiber Bragg grating having a first refractive index profile comprising a full width at half maximum bandwidth of at least 0.2 nm and a Gaussian-like apodization, wherein, upon pumping of the optical gain region with the pump laser beam and mode locking of the laser cavity, optical pulses are circulated along the cavity path; and an output.

A light source for Raman amplification to Raman-amplify signal light includes: plural incoherent light sources that output incoherent light; plural pumping light sources that output second-order pumping light; an optical fiber for Raman amplification to Raman-amplify the incoherent light with the second-order pumping light, and outputs the amplified incoherent light; and an output unit connected to the optical transmission fiber, receiving the amplified incoherent light, and outputting the amplified incoherent light as first-order pumping light having a wavelength that Raman-amplifies the signal light to the optical transmission fiber.

Various example embodiments relate to active optical fibers and devices comprising active optical fibers. A section of an active optical fiber may comprise an active core doped with at least one rare-earth element. The active core may have a first refractive index and be configured to support a single mode operation of an optical signal. The section of the active optical fiber may further comprise at least one cladding layer having a second refractive index. The second refractive index may be less than the first refractive index. Birefringence of the active core may be less than 10.sup.-5. Fiber lasers and power amplifiers comprising the section of the active optical fiber are also disclosed.

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

An optical amplification device includes a first Raman amplifier outputs a first excitation light to a transmission line in a same direction as a signal light, and a second Raman amplifier outputs a second excitation light to the transmission line in an opposite direction to the signal light. The first Raman amplifier includes a first detector detects a first power of a first transmitted light transmitted through a first optical filter. The second Raman amplifier includes a second detector detects second power of a second transmitted light transmitted through a second optical filter. The first Raman amplifier stops output of the first excitation light when the first power is higher than a threshold. The second Raman amplifier stops output of the second excitation light when the second power is reduced from power of the first excitation light transmitted through the second optical filter.