H01S3/09

Pulsed laser driver

The disclosure relates to a pulsed laser driver that utilizes a high-voltage switch transistor to support a high output voltage for a laser, and a low-voltage switch transistor that switches between an ON state and an OFF state to generate a pulsed current that is supplied to the laser to generate an output pulsed laser signal. The pulsed laser driver switches the low-voltage switch transistor between the ON state and the OFF state according to an input pulsed signal such that the output pulsed laser signal is modulated according to the input pulsed signal. The pulsed laser driver also utilizes a feedback control module to control the gate terminal voltage of the high-voltage switch transistor to improve the precision of the output pulsed laser signal.

Pulsed laser driver

The disclosure relates to a pulsed laser driver that utilizes a high-voltage switch transistor to support a high output voltage for a laser, and a low-voltage switch transistor that switches between an ON state and an OFF state to generate a pulsed current that is supplied to the laser to generate an output pulsed laser signal. The pulsed laser driver switches the low-voltage switch transistor between the ON state and the OFF state according to an input pulsed signal such that the output pulsed laser signal is modulated according to the input pulsed signal. The pulsed laser driver also utilizes a feedback control module to control the gate terminal voltage of the high-voltage switch transistor to improve the precision of the output pulsed laser signal.

Light Source for High Power Coherent Light, Imaging System, and Method of Using Relativistic Electrons for Imaging and Treatment
20230008065 · 2023-01-12 ·

A light source for high power coherent light can include multiparticle relativistic bunches of electrons generating high intensity propagating fields. Coherent emission between electrons may also be utilized. The source may be independent of any medium or media to remove all constraints on the wavelength of the light emitted. And at least a portion of a single alternating magnetic field for accelerating the electron bunches can be included. The color or wavelength of the produced light can be determined solely by the parameters of the electron bunches and the alternating field. The source can be used for imaging, such as medical imaging or for security, including concealed weapons, and for quality control.

RARE EARTH INTERLAYS FOR MECHANICALLY LAYERING DISSIMILAR SEMICONDUCTOR WAFERS
20180012858 · 2018-01-11 ·

Structures described herein may include mechanically bonded interlayers for formation between a first Group III-V semiconductor layer and a second semiconductor layer. The mechanically bonded interlayers provide reduced lattice strain by strain balancing between the Group III-V semiconductor layer and the second semiconductor layer, which may be silicon.

FREE ELECTRON LASER ORBITAL DEBRIS REMOVAL SYSTEM

Orbital debt is removal (ODR) systems under the present approach may use a ground- or surface-based FEL and mirror system with sufficient power and both spatial and temporal resolution to both locate Category II OD (1 cm to 10 cm diameter) in low Earth orbit (LEO, 160 to 2000 km altitude) and remove these objects from orbit. Locating the Category II OD is performed by having, the light beam from an FEL and its beam director scan a volume of space of interest and then observing the light reflected from the OD. Removing the OD may include heating the OD to a sufficiently high temperature to evaporate the OD, changing the orbit of the OD such as to lower the perigee, or both. Megawatt-class MOPA FELs for, inter alia, removing OD, are described.

Non-reciprocal lasing in topological cavities of arbitrary geometries

A laser source includes a topological cavity for nonreciprocal lasing, a magnetic material and an optical waveguide. The magnetic material is arranged to interact with the topological cavity. The optical waveguide is arranged to receive light extracted from the topological cavity upon breaking of time-reversal symmetry in the topological cavity.

Simultaneously entangling gates for trapped-ion quantum computers
11715027 · 2023-08-01 · ·

A method of performing simultaneous entangling gate operations in a trapped-ion quantum computer includes selecting a gate duration value and a detuning frequency of pulses to be individually applied to a plurality of participating ions in a chain of trapped ions to simultaneously entangle a plurality of pairs of ions among the plurality of participating ions by one or more predetermined values of entanglement interaction, determining amplitudes of the pulses, based on the selected gate duration value, the selected detuning frequency, and the frequencies of the motional modes of the chain of trapped ions, generating the pulses having the determined amplitudes, and applying the generated pulses to the plurality of participating ions for the selected gate duration value. Each of the trapped ions in the chain has two frequency-separated states defining a qubit, and motional modes of the chain of trapped ions each have a distinct frequency.

Simultaneously entangling gates for trapped-ion quantum computers
11715027 · 2023-08-01 · ·

A method of performing simultaneous entangling gate operations in a trapped-ion quantum computer includes selecting a gate duration value and a detuning frequency of pulses to be individually applied to a plurality of participating ions in a chain of trapped ions to simultaneously entangle a plurality of pairs of ions among the plurality of participating ions by one or more predetermined values of entanglement interaction, determining amplitudes of the pulses, based on the selected gate duration value, the selected detuning frequency, and the frequencies of the motional modes of the chain of trapped ions, generating the pulses having the determined amplitudes, and applying the generated pulses to the plurality of participating ions for the selected gate duration value. Each of the trapped ions in the chain has two frequency-separated states defining a qubit, and motional modes of the chain of trapped ions each have a distinct frequency.

Amplitude, frequency, and phase modulated simultaneous entangling gates for trapped-ion quantum computers
11715028 · 2023-08-01 · ·

A method of performing a computation using a quantum computer includes generating a plurality of laser pulses used to be individually applied to each of a plurality of trapped ions that are aligned in a first direction, each of the trapped ions having two frequency-separated states defining a qubit, and applying the generated plurality of laser pulses to the plurality of trapped ions to perform simultaneous pair-wise entangling gate operations on the plurality of trapped ions. Generating the plurality of laser pulses includes adjusting an amplitude value and a detuning frequency value of each of the plurality of laser pulses based on values of pair-wise entanglement interaction in the plurality of trapped ions that is to be caused by the plurality of laser pulses.

Amplitude, frequency, and phase modulated simultaneous entangling gates for trapped-ion quantum computers
11715028 · 2023-08-01 · ·

A method of performing a computation using a quantum computer includes generating a plurality of laser pulses used to be individually applied to each of a plurality of trapped ions that are aligned in a first direction, each of the trapped ions having two frequency-separated states defining a qubit, and applying the generated plurality of laser pulses to the plurality of trapped ions to perform simultaneous pair-wise entangling gate operations on the plurality of trapped ions. Generating the plurality of laser pulses includes adjusting an amplitude value and a detuning frequency value of each of the plurality of laser pulses based on values of pair-wise entanglement interaction in the plurality of trapped ions that is to be caused by the plurality of laser pulses.