A laser processing system includes: a wavelength-variable laser device configured to output each of a laser beam at an absorption line as a wavelength at which light is absorbed by oxygen and a laser beam at a non-absorption line as a wavelength at which the amount of light absorption by oxygen is smaller than at the absorption line; an optical system configured to irradiate a workpiece with the laser beam; and a laser control unit configured to control the wavelength-variable laser device, set the wavelength of the laser beam output from the wavelength-variable laser device to be the non-absorption line when laser processing is performed on the surface of the workpiece in gas containing oxygen, and set the wavelength of the laser beam output from the wavelength-variable laser device to be the absorption line when ozone cleaning is performed on the surface of the workpiece in gas containing oxygen.

A laser apparatus includes: (A) a solid-state laser apparatus that outputs burst seed pulsed light containing a plurality of pulses; (B) an excimer amplifier that amplifies the burst seed pulsed light in a discharge space in a single occurrence of discharge and outputs the amplified light as amplified burst pulsed light; (C) an energy sensor that measures the energy of the amplified burst pulsed light; and (D) a laser controller that corrects the timing at which the solid-state laser apparatus is caused to output the burst seed pulsed light based on the relationship of the difference between the timing at which the solid-state laser apparatus outputs the burst seed pulsed light and the timing at which the discharge occurs in the discharge space with a measured value of the energy.

A gas laser apparatus includes an enclosure, a window holder, a window, and a sealing member. The window holder further having an extending surface located on the side toward which reflected light travels, the reflected light being reflected off the window, the extending surface being continuous with the end surface and extending in a direction away from the window, the extending surface irradiated with the reflected light. A line is obtained by symmetrically folding back the optical axis of the reflected light at the position, on the extending surface, that is irradiated with the reflected light with respect to a reference line passing through the irradiated position and perpendicular to the extending surface. The line 602 extends across a normal to the window in the direction from the extending surface toward the window from the side facing the outer circumference of the window toward the center axis of the window.

A beam reverser module for an optical power amplifier of a laser arrangement comprises at least one reflecting surface for receiving an incoming laser beam propagating in a first direction and reflecting the incoming laser beam into a second direction different from the first direction, wherein the at least one reflecting surface is a highly reflecting surface of at least one mirror.

A laser system including: A. a laser apparatus configured to output a pulse laser beam; B. an optical pulse stretcher including a delay optical path for expanding a pulse width of the pulse laser beam; and C. a phase optical element included in the delay optical path and having a function of spatially and randomly shifting a phase of the pulse laser beam. The phase optical element includes a plurality of types of cells providing different amounts of phase shift to the pulse laser beam and arranged irregularly in any direction.

A solid-state laser system may include a first solid-state laser unit, a second solid-state laser unit, a wavelength conversion system, a wavelength detector, and a wavelength controller. The wavelength conversion system may receive a first pulsed laser light beam with a first wavelength and a second pulsed laser light beam with a second wavelength, and output a third pulsed laser light beam with a third wavelength converted from the first and second wavelengths. The wavelength controller may control the first solid-state laser unit to vary the first wavelength on a condition that an absolute value of a difference between a value of a target wavelength and a value of the third wavelength detected by the wavelength detector is equal to or less than a predetermined value, and control the second solid-state laser unit to vary the second wavelength on a condition that the absolute value exceeds the predetermined value.

A laser apparatus including an optical element made of a CaF.sub.2 crystal and configured to transmit an ultraviolet laser beam obliquely incident on one surface of the optical element, the electric field axis of the P-polarized component of the laser beam propagating through the optical element coinciding with one axis contained in <111> of the CaF.sub.2 crystal, with the P-polarized component defined with respect to the one surface. A method for manufacturing an optical element, the method including causing a seed CaF.sub.2 crystal to undergo crystal growth along one axis contained in <111> to form an ingot, setting a cutting axis to be an axis inclining by an angle within 14.18±5° with respect to the crystal growth direction toward the direction of another axis contained in <111>, which differs from the crystal growth direction, and cutting the ingot along a plane perpendicular to the cutting axis.

A laser system includes a beam shaping unit, a random phase plate, and a collimating optical system in an optical path between a solid-state laser device and an excimer amplifier. When a traveling direction of a laser beam entering the excimer amplifier is a Z direction, a discharge direction of a pair of discharge electrodes is a V direction, a direction orthogonal to the V and Z directions is an H direction, a shaping direction of the beam shaping unit corresponding to the V direction is a first direction, a shaping direction of the beam shaping unit corresponding to the H direction is a second direction, an expansion rate in the first direction is E1, and an expansion rate in the second direction is E2, the beam shaping unit expands a beam section of the laser beam such that an expansion ratio defined by E2/E1 is higher than 1.

The laser system may include first and second laser apparatuses and a beam delivery device. The first laser apparatus may be provided so as to emit a first laser beam to the beam delivery device in a first direction. The second laser apparatus may be provided so as to emit a second laser beam to the beam delivery device in a direction substantially parallel to the first direction. The beam delivery device may be configured to bundle the first and second laser beams and to emit the first and second laser beams from the beam delivery device to a beam delivery direction different from the first direction.

A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the transfer position.