A laser apparatus according to an aspect of the present disclosure includes a laser oscillator configured to emit a pulse laser beam, and a first optical pulse stretcher, a second optical pulse stretcher, and a third optical pulse stretcher that are disposed on an optical path of the pulse laser beam. When L1 represents an optical path length of a delay optical path of the first optical pulse stretcher, L2 represents an optical path length of a delay optical path of the second optical pulse stretcher, L3 represents an optical path length of a delay optical path of the third optical pulse stretcher, and n represents an integer equal to or larger than two, L2 is an integral multiple of L1 by an integer equal to or larger than two and L3 satisfies the following condition: (n−0.75)×L1≤L3≤(n−0.25)×L1.

A laser apparatus includes an oscillator, a rotary stage that supports an optical element, a grating, a first driving mechanism that changes the angle of incidence of pulse laser light to be incident on the grating by driving the rotary stage, a second driving mechanism that changes the angle of incidence of the pulse laser light to be incident on the grating by driving the rotary stage by a smaller amount, a wavelength monitor, and a processor that cyclically changes a target wavelength of the pulse laser light. The processor calculates the moving average of drive instruction values by which the second driving mechanism is driven, and when the moving average exceeds a threshold, the processor causes the second driving mechanism to return to an initial position, and drives the first driving mechanism to cancel a change in the angle of incidence caused by the returning operation.

An exposure method includes reading data representing a relationship between a first parameter relating to an energy ratio between energy of first pulsed laser light having a first wavelength and energy of second pulsed laser light having a second wavelength longer than the first wavelength and a second parameter relating to a sidewall angle of a resist film that is the angle of a sidewall produced when the resist film is exposed to the first pulsed laser light and the second pulsed laser light, and determining a target value of the first parameter based on the data and a target value of the second parameter; and exposing the resist film to the first pulsed laser light and the second pulsed laser light by controlling a narrowed-line gas laser apparatus to output the first pulsed laser light and the second pulsed laser light based on the target value of the first parameter.

A control method for a line narrowed gas laser apparatus is a control method for a line narrowed gas laser apparatus configured to emit a pulse laser beam including a first wavelength component and a second wavelength component. The apparatus includes a laser chamber including a pair of electrodes, an optical resonator including an adjustment mechanism configured to adjust a parameter of an energy ratio of the first and second wavelength components, and a processor in which relation data indicating a relation of the parameter of the energy ratio with a control parameter of the adjustment mechanism is stored. The control method includes receiving a command value of the parameter of the energy ratio from an external device, and acquiring, based on the relation data, a value of the control parameter corresponding to the command value and controlling the adjustment mechanism based on the value of the control parameter.

An exposure system according to an aspect of the present disclosure includes a laser apparatus emitting a pulse laser beam, an illumination optical system guiding the pulse laser beam to a reticle, a reticle stage moving the reticle, and a processor controlling emission of the pulse laser beam and movement of the reticle. The exposure system performs scanning exposure of a semiconductor substrate by irradiating the reticle with the pulse laser beam. The reticle has first and second regions. The processor instructs the laser apparatus about, based on proximity effect characteristics corresponding to the first and second regions, a value of a control parameter of the pulse laser beam corresponding to each region so that the laser apparatus emits the pulse laser beam with which a difference of the proximity effect characteristic of each region from a reference proximity effect characteristic is in an allowable range.

In some general aspects, a light beam control apparatus includes: a spectral feature actuator associated with a set of different states, each state configured to cause an optical apparatus to generate one or more pulses of a light beam at a discrete value of a spectral feature of the light beam; and a controller in communication with the spectral feature actuator. The controller includes: an actuator drive module configured to cause the spectral feature actuator to transition among the set of different states according to a control waveform; a waveform module configured to compute the control waveform for the spectral feature actuator that governs the transition among the set of discrete values; and a predictive module configured to receive one or more sensed aspects of the spectral feature actuator and instruct the waveform module to adjust the control waveform based on the received sensed aspects.

A laser chamber apparatus may include a pipe, an inner electrode extending along a longitudinal direction of the pipe and disposed in a through hole in the pipe, an outer electrode including a contact plate extending along the longitudinal direction of the pipe and being in contact with an outer circumferential surface of the pipe and a ladder section formed of bar members each having one end connected to the contact plate and juxtaposed along a longitudinal direction of the contact plate, and a leaf spring extending along the longitudinal direction of the pipe and configured to press the outer electrode against the pipe. The leaf spring may include leaf spring pieces separated by slits, and the leaf spring pieces may each include a bent section bent along the edge and are configured to press the bar members in a position shifted from the bent sections toward the edge.

A laser apparatus according to the present disclosure includes: a laser output unit configured to perform laser oscillation; and a control unit configured to acquire first laser performance data obtained when the laser output unit performs laser oscillation based on a first laser control parameter, and second laser performance data obtained when the laser output unit performs laser oscillation based on a second laser control parameter, while laser output from the laser output unit to an external device is stopped, and determine whether the second laser performance data has been improved as compared to the first laser performance data.

An information processing device includes a processor and a storage device. The processor is configured to acquire data for each parameter provided from each of a light source device which generates pulse light and an exposure apparatus which performs exposure on a wafer with the pulse light output from the light source device, and time data associated with the data; to perform classification, based on the acquired data and time data, for each record of the data associated with same time data for distinguishing whether being data during exposure in which the wafer is irradiated with the pulse light or being data during non-exposure; to associate attribute information indicating an attribute according to the classification with each of the records; to cause the storage device to store the data and the time data associated with the attribute information; and to generate a chart using data read from the storage device.

A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the transfer position.