A laser system is provided. The laser system comprises: a seed laser configured to produce a sequence of seed light pulses, wherein the sequence of seed light pulses are produced with variable time intervals in a sweep cycle; a pump laser configured to produce pump light having variable amplitude in the sweep cycle; and a control unit configured to generate a command to the pump laser to synchronize the pump light with the sequence of seed light pulses.

An exposure system according to an aspect of the present disclosure includes a laser apparatus emitting a pulse laser beam, an illumination optical system guiding the pulse laser beam to a reticle, a reticle stage moving the reticle, and a processor controlling emission of the pulse laser beam and movement of the reticle. The exposure system performs scanning exposure of a semiconductor substrate by irradiating the reticle with the pulse laser beam. The reticle has first and second regions. The processor instructs the laser apparatus about, based on proximity effect characteristics corresponding to the first and second regions, a value of a control parameter of the pulse laser beam corresponding to each region so that the laser apparatus emits the pulse laser beam with which a difference of the proximity effect characteristic of each region from a reference proximity effect characteristic is in an allowable range.

An exposure system according to an aspect of the present disclosure includes a laser apparatus that outputs pulsed laser light, an illuminating optical system that guides the pulsed laser light to a reticle, a reticle stage, and a processor that controls the output of the pulsed laser light from the laser apparatus and the movement of the reticle performed by the reticle stage. The reticle has a first region where a first pattern is disposed and a second region where a second pattern is disposed, and the first and second regions are each a region continuous in a scan width direction perpendicular to a scan direction of the pulsed laser light, with the first and second regions arranged side by side in the scan direction. The processor controls the laser apparatus to output the pulsed laser light according to each of the first and second regions by changing the values of control parameters of the pulsed laser light in accordance with each of the first and second regions.

A laser apparatus may include: a mirror configured to reflect a laser beam; an actuator configured to operate the mirror; and a controller configured to transmit a movement instruction to the actuator, wherein the controller predicts a movement completion time of the actuator, and transmits a polling signal so that the actuator receives the polling signal after expiration of the predicted movement completion time.

A hybrid semiconductor laser component comprising at least one first emitting module comprising an active zone shaped to emit electromagnetic radiation at a given wavelength; and an optical layer comprising at least one first waveguide optically coupled with the active zone, the waveguide forming with the active zone an optical cavity resonating at the given wavelength. The hybrid semiconductor laser component also comprises a heat-dissipating semiconductor layer, the heat-dissipating semiconductor layer being in thermal contact with the first emitting module on a surface of the first emitting module that is opposite the optical layer. The invention also relates to a method for manufacturing such a hybrid semiconductor laser component.

A multi-wavelength laser module including a base plate, a plurality of radiation sources mounted on the base plate, at least one telescope including a first lens and a second lens wherein the second lens is arranged at a distance from the first lens along a radiation beam path, thereby creating a telescopic effect. A beam angle correction plate is arranged between the first lens and the second lens in the radiation beam path, the beam angle correction plate being angled in relation to the radiation beam path so as to parallel shift the radiation beam inside the telescope and thereby adjust the pointing direction of the radiation beam after passage of the telescope. Further, a method for assembling a multi-wavelength laser system provided with telescopes with such beam angle correction plate.

A laser system produces pulses having wavelengths between 2000 nm and 2100 nm, peak output powers greater than 1 kW, average powers greater than 10 W, pulse widths variable from 0.5 to 10 nsec, pulse repetition frequencies variable from 0.1 to over 2 MHz, and a pulse extinction of at least 60 dB. Pulses from a diode laser having a wavelength between 1000 nm and 1100 nm are amplified by at least one fiberoptic amplifier and applied as the pump input to an Optical Parametric Amplifier (OPA). A cw laser provides an OPA seed input at a wavelength between 2000 nm and 2200 nm. The idler output of the OPA having difference frequency wavelength between 2000 nm and 2100 nm is further amplified by a crystal amplifier. The fiberoptic amplifier can include Ytterbium-doped fiberoptic. The crystal amplifier can include a Ho:YAG, Ho:YLF, Ho:LuAG, and/or a Ho:Lu2O3 crystal.

A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the transfer position.

A system for generating extreme ultraviolet light, in which a target material inside a chamber is irradiated with a laser beam to be turned into plasma, includes a first laser apparatus configured to output a first laser beam, a second laser apparatus configured to output a pedestal and a second laser beam, and a controller connected to the first and second laser apparatuses and configured to cause the first laser beam to be outputted first, the pedestal to be outputted after the first laser beam, and the second laser beam having higher energy than the pedestal to be outputted after the pedestal.

An optical arrangement for adjusting the wavelength of light, comprising: a first light source arranged to generate a first beam of light at a first wavelength; a second light source arranged to generate seed light at a second wavelength; a first Raman shifting medium arranged to receive the light from the first light source in combination with the seed light from the second light source, and to produce, by stimulated Raman scattering, output light at the second wavelength and having temporal properties determined by those of the first beam of light; a third light source arranged to generate seed light at a third wavelength; and a second Raman shifting medium arranged to receive the output light from the first Raman shifting medium in combination with the seed light from the third light source, and to produce, by stimulated Raman scattering, output light at the third wavelength and having temporal properties determined by those of the output light from the first Raman shifting medium; wherein the third wavelength is greater than the second wavelength, and the second wavelength is greater than the first wavelength; wherein the frequency difference between the first beam of light and the seed light from the second light source is a frequency difference where the first Raman shifting medium exhibits Raman gain; and wherein the frequency difference between the output light from the first Raman shifting medium and the seed light from the third light source is a frequency difference where the second Raman shifting medium exhibits Raman gain. Also provided is a corresponding method of adjusting the wavelength of light.