To provide a method of manufacturing a light-emitting module capable of accurately arranging a plurality of light-emitting elements at narrow intervals, and a light-emitting module manufactured by the method of manufacturing, and, moreover, a device on which the light-emitting module is mounted. Provided is a method of manufacturing a light-emitting module including: a plurality of light-emitting element arrays each including, in a plane parallel to resonator length of a light-emitting element, a plurality of the light-emitting elements arranged along a width direction perpendicular to a direction of the resonator length; and a substrate on which the plurality of light-emitting element arrays is mounted, the method including arranging the plurality of light-emitting elements on the substrate at predetermined intervals along the width direction in the light-emitting module, by causing side surfaces of the respective light-emitting element arrays adjacent to each other along the width direction to be in contact with each other and mounting the respective light-emitting element arrays on the substrate.

A method of fabricating and transferring high quality and manufacturable light-emitting devices, such as micro-sized light-emitting diodes (μLEDs), edge-emitting lasers and vertical-cavity surface-emitting lasers (VCSELs), using epitaxial later over-growth (ELO) and isolation methods. III-nitride semiconductor layers are grown on a host substrate using a growth restrict mask, and the III-nitride semiconductor layers on wings of the ELO are then made into the light-emitting devices. The devices are isolated from the host substrate to a thickness equivalent to the growth restrict mask and then transferred or lifted from of the host substrate. Back-end processing of the devices is then performed, such as attaching distributed Bragg reflector (DBR) mirrors, forming cladding layers, and/or adding heatsinks.

A method for producing a detachment area in a solid body in described. The solid body has a crystal lattice and is at least partially transparent to laser beams emitted by a laser. The method includes: modifying the crystal lattice of the solid by a laser beam, wherein the laser beam penetrates through a main surface of a detachable solid portion of the solid body, wherein a plurality of modifications are produced in the crystal lattice, wherein the modification are formed in a plane parallel to the main surface and at a distance from one another, wherein as a result of the modifications, the crystal lattice cracks the regions surrounding the modifications sub-critically in at least the one portion, and wherein the subcritical cracks are arranged in a plane parallel to the main surface.

A method for producing a composite component (100) and a composite component (100) comprising a plurality of components (10), a removable sacrificial layer (4), an anchoring structure (3) and a common intermediate carrier (90) are specified. The components each have a semiconductor body (2) comprising an active zone (23), are configured to generate coherent electromagnetic radiation and are arranged on the common intermediate carrier. The sacrificial layer is arranged in a vertical direction between the intermediate carrier and the components. The anchoring structure comprises a plurality of anchoring elements (3A, 3B), wherein the anchoring structure and the sacrificial layer provide a mechanical connection between the intermediate carrier and the components. Without the sacrificial layer, the components are mechanically connected to the intermediate carrier solely via the anchoring elements, wherein the anchoring elements are formed in such a way that under mechanical load they release the components so that the components are detachable from the intermediate carrier and are thus formed to be transferable.

Methods for fabricating vertical cavity surface emitting lasers (VCSELs) on a large wafer are provided. An un-patterned epi layer form is bonded onto a first reflector form. The first reflector form includes a first reflector layer and a wafer of a first substrate type. The un-patterned epi layer form includes a plurality of un-patterned layers on a wafer of a second substrate type. The first and second substrate types have different thermal expansion coefficients. A resulting bonded blank is substantially non-varying in a plane that is normal to an intended emission direction of the VCSEL. A first regrowth is performed to form first regrowth layers, some of which are patterned to form a tunnel junction pattern. A second regrowth is performed to form second regrowth layers. A second reflector form is bonded onto the second regrowth layers, wherein the second reflector form includes a second reflector layer.

A plurality of light sources such as vertical-cavity surface-emitting lasers (VCSELs) are configured to emit non-visible light through emission apertures. Optics are formed over the emission apertures of the plurality of light sources. The optics may provide different tilt angles or divergence angles to the non-visible light emitted by the light sources in the plurality of light sources.

An optoelectronic semiconductor chip comprises a semiconductor body including a plurality of active regions configured to generate electromagnetic radiation, the plurality of active regions being arranged in a horizontal plane. The optoelectronic semiconductor chip further comprises a conductive member configured to electrically connect at least two adjacent ones of the active regions with each other, the conductive member being arranged over a first main surface of the semiconductor body. The optoelectronic semiconductor chip further comprises a contact element extending from the first main surface to a second main surface of the semiconductor body and being electrically connected to at least one of the active regions via a contact material over the first main surface, and an optical element arranged over the first main surface of the semiconductor body.

A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

In an embodiment a method includes providing a plurality of radiation-emitting semiconductor chips configured to emit primary radiation of a first wavelength range, applying a converter on the plurality of radiation-emitting semiconductor chips, the converter configured to emit secondary radiation of a second wavelength range, applying a mirror layer sequence arranged downstream of the converter, the mirror layer sequence configured to reflect the primary radiation and transmit the secondary radiation and singulating the plurality of radiation-emitting semiconductor chips in order to produce optoelectronic components, wherein the converter is applied on the plurality of radiation-emitting semiconductor chips by spray coating, and wherein the mirror layer sequence is applied on the converter by sputtering, atomic layer deposition and/or plasma-enhanced chemical vapor deposition (PECVD).

A method for separating a solid body includes: providing a first solid body having opposite first and second surfaces and a crystal lattice, and that is at least partially transparent to a laser beam emitted by a laser; modifying a portion of the crystal lattice by the laser beam, the laser beam penetrating through the first surface, the modified portion of the crystal lattice extending in a plane parallel to the first surface, as a result of the modification, subcritical cracks are formed arranged in a plane parallel to the first surface, a plurality of the subcritical cracks forming a detachment region in the first solid body, the plurality of the subcritical cracks passing at least in some sections through the modified portion of the crystal lattice; and separating the first solid body along the detachment region to form a wafer and a second solid body.