Disclosed is an epitaxial substrate with a 2D material interposer on a surface of a polycrystalline substrate. The ultra-thin 2D material interposer is grown by van der Waals epitaxy. The lattice constant of a surface layer of the ultra-thin 2D material interposer and the coefficient of thermal expansion of the substrate base are highly fit with those of AlGaN or GaN. The ultra-thin 2D material interposer is of a single-layer structure or a composite-layer structure. An AlGaN or GaN single crystalline epitaxial layer is grown on the ultra-thin 2D material interposer by virtue of the van der Waals epitaxy. Therefore, the large-size substrate may be manufactured with far lower costs than related single crystal wafers.

To provide a light-emitting apparatus capable of shaping light from a plurality of light-emitting elements into light with a plurality of shapes and a manufacturing method thereof. A light-emitting apparatus according to the present disclosure, including: a substrate; a plurality of light-emitting elements which are provided on a side of a first surface of the substrate; and a plurality of first lenses which are provided on a side of a second surface of the substrate and on which light emitted from the plurality of light-emitting elements is incident, wherein the plurality of first lenses include at least two types of lenses among a concave lens, a convex lens, and a flat lens.

Integrated laser sources emitting multi-wavelengths of light with reduced thermal transients and crosstalk and methods for operating thereof are disclosed. The integrated laser sources can include one or more heaters and a temperature control system to maintain a total thermal load of the gain segment, the heater(s), or both of a given laser to be within a range based on a predetermined target value. The system can include electrical circuitry configured to distribute current to the gain segment, the heater(s), or both. The heater(s) can be located proximate to the gain segment, and the distribution of current can be based on the relative locations. In some examples, the central laser can be heated prior to being activated. In some examples, one or more of the plurality of lasers can operate in a subthreshold operation mode when the laser is not lasing to minimize thermal perturbations to proximate lasers.

A semiconductor laser element includes: an n-type cladding layer disposed above an n-type semiconductor substrate (a chip-like substrate); an active layer disposed above the n-type cladding layer; and a p-type cladding layer disposed above the active layer, in which the active layer includes a well layer and a barrier layer, an energy band gap of the barrier layer is larger than an energy band gap of the n-type cladding layer, and a refractive index of the barrier layer is higher than a refractive index of the n-type cladding layer.

A Group-III nitride light emitting device that utilizes scattering of hot carriers generated by Auger recombination from an externally electrically-driven, relatively narrow band gap carrier generation region into a relatively wide band gap carrier recombination region, such that the relatively wide band gap carrier recombination region of the Group-III nitride light emitting device is internally electrically injected by the hot carriers generated in the externally electrically-injected relatively narrow band gap carrier generation region. The device is used for generation of incoherent light (a light-emitting diode) or coherent light (a laser diode).

A radiation-emitting semiconductor component is disclosed. In an embodiment, a component includes a semiconductor layer sequence and a carrier on which the semiconductor layer sequence is arranged, wherein the semiconductor layer sequence comprises an active region configured for generating radiation, an n-conducting mirror region and a p-conducting mirror region, wherein the active region is arranged between the n-conducting mirror region and the p-conducting mirror region, and wherein the p-conducting mirror region is arranged closer to the carrier than the active region.

A decrease in image quality is suppressed. A solid-state imaging apparatus according to an embodiment includes: a photoelectric conversion unit (PD) including a material having a smaller band gap energy than silicon; and a circuit board joined to the photoelectric conversion unit, the circuit board including: a pixel signal generation circuit that generates a pixel signal having a voltage value corresponding to a charge generated in the photoelectric conversion unit; and a thermometer circuit that detects a temperature of the circuit board.

A light emitting device includes a wiring substrate, a light emitting element array that includes a first side surface and a second side surface facing each other, and a third side surface and a fourth side surface connecting the first side surface and the second side surface to each other and facing each other, the light emitting element array being provided on the wiring substrate, a driving element that is provided on the wiring substrate on the first side surface side and drives the light emitting element array, a first circuit element and a second circuit element that are provided on the wiring substrate on the second side surface side to be arranged in a direction along the second side surface, and a wiring member that is provided on the third side surface side and the fourth side surface side and extends from a top electrode of the light emitting element array toward an outside of the light emitting element array.

In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate; a first mirror disposed over the substrate; a bonding layer disposed over the first mirror; and an active region disposed over the bonding layer. The substrate is a gallium arsenide (GaAs) substrate, and the active region is an indium phosphide (InP)-based active region.

An electrically pumped photonic-crystal surface-emitting laser, the epitaxy structure has a first mesa, the first mesa has multiple air holes and forming a photonic crystal structure, the epitaxy structure further has a second mesa, the second mesa and photonic crystal structure is facing the same direction; a first metal electrode arranged on the insulating layer, and covering the photonic crystal structure; a second metal electrode arranged on the second mesa and protruding out of the groove, making the first metal electrode and the second metal electrode face the same direction; and further make the first metal electrode connect to the first connecting metal and make the second metal electrode connect to the second connecting metal for making the photonic crystal structure become flip chip.