To provide a light-emitting apparatus capable of suitably controlling light emitted from a light-emitting element. A light-emitting apparatus according to the present disclosure includes: a substrate; a plurality of light-emitting elements which are provided on a side of a first surface of the substrate; and an optical element which is provided on a side of a second surface of the substrate and into which light emitted from the plurality of light-emitting elements is incident, wherein the optical element includes a liquid crystal layer which is configured to function as a lens.

A semiconductor device includes: a package including: a lower surface, at least one first metal surface at an outer periphery of the lower surface, and at least one second metal surface at the lower surface at a location different from the at least one first metal surface; a mounting substrate disposed below the package and including: an upper surface, at least one first metal pattern disposed at the upper surface below the at least one first metal surface, and at least one second metal pattern disposed at the upper surface below the at least one second metal surface; a first bonding member containing a metal material and bonding the at least one first metal surface and the at least one first metal pattern; and a second bonding member containing a metal material and bonding the at least one second metal surface and the at least one second metal pattern.

A photonic synthesizer includes a multifrequency optical source to produce a signal of interest from a pair of lasers, which may be self-injection locked chip lasers. The signal is referenced to a high frequency clock using a photonic mixer/divider based on an electro-optical modulator and a relatively slow photodiode. The electro-optical modulator produces optical harmonics from the beams from the pair of lasers, where one harmonic from the first laser beam and one harmonic from the second laser beam beat on the photodiode. A phase locked control signal is generated for controlling the output frequency of one or both of the two lasers. The output signal of the photonic synthesizer is generated using a relatively fast photodiode based on a difference in frequencies of the pair of lasers. The output signal may be a millimeter wave-band signal. The photonic synthesizer can be formed as a photonic integrated circuit (PIC).

A wavelength conversion element includes a plate, a wavelength conversion layer, and a macromolecular layer. The wavelength conversion layer has a facing surface facing the plate. The wavelength conversion layer contains an inorganic wavelength conversion material that emits light of a wavelength different from the wavelength of incident light. The macromolecular layer is disposed between the plate and the wavelength conversion layer. A part of the facing surface is in contact with the plate. At least a part of another portion of the facing surface is joined to the plate with the macromolecular aver interposed.

An optical component includes a support member having a through-hole, a second light-transmissive member disposed inside the through-hole, and having a light incidence face, a light emission face, and an outer peripheral side surface, and at least one functional film selected from a group consisting of a short pass filter, a long pass filter, and a heat dissipation member and disposed on a surface of the second light-transmissive member.

A semiconductor laser source includes a structured layer formed on a substrate made of silicon and having an upper face. The structured layer includes a passive optical component chosen from the group composed of an optical reflector and a waveguide. The component is encapsulated in silica or produced on a silica layer. At least one pad extends from a lower face of the structured layer, making direct contact with the substrate made of silicon, to an upper face flush with the upper face of the structured layer. The pad is produced entirely from silicon nitride, in order to form a thermal bridge through the structured layer. An optical amplifier is bonded directly above the passive optical component and partially to the upper face of the pad in order to dissipate the heat that it generates to the substrate made of silicon.

An optical package for providing efficient coupling between a photonic device and a silicon photonic integrated-circuit chip (Si PIC) edge couplers with low return loss, as well as variations thereof, is described. The optical package may include a photonic device, a Si PIC, a single mode fiber or fiber array assembly, a lens and a spacer. The Si PIC may an input edge coupler and an output edge coupler. The single mode fiber or fiber array assembly may be aligned to the output edge coupler. The lens may be disposed between the photonic device and the input edge coupler, and may be configured to minimize a mismatch between an output spot size of the photonic device and a spot size of the input edge coupler of the Si PIC. The spacer may be bonded to a facet of the input edge coupler with an index matching fluid.

A laser device has a plurality of laser diodes; a plurality of optical elements installed corresponding to the plurality of the laser diodes; a plurality of units formed by fixing the laser diodes and the optical elements per each laser diode and installed corresponding to the plurality of the laser diodes; a converging element that converges laser beams emitted from the plurality of the laser diodes to a fiber; a housing element houses the plurality of the units and the converging element; and a thermal transfer plate performs heat dissipation of the plurality of the units. The heat resistance reducing element having a heat resistance value that is smaller than a predetermined value is installed between the thermal transfer plate and each unit or the processing for reducing the heat resistance is performed.

Embodiments include a silicon photonic chip having a substrate, an optical waveguide on a surface of the substrate and a cavity. The cavity includes an electro-optical component, configured for emitting light perpendicular to said surface and a lens element arranged on top of the electro-optical component. The lens is configured for collimating light emitted by the electro-optical component. The chip also includes a deflector arranged on top of the lens element and configured for deflecting light collimated through the latter toward the optical waveguide. The lens element includes electrical conductors connected to the electro-optical component. The electrical conductors of the lens element may for instance include one or more through vias, one or more bottom electrical lines on a bottom side of the lens element (facing the electro-optical component), and at least one top electrical line.

An optoelectronic device includes an optoelectronic die, a laser die, and electrical interconnects. The optoelectronic device has a surface. A trench having first and second walls and a floor is formed in the surface, and an electrically conductive layer extends from the floor, via the first wall, to the surface. The laser die includes first and second electrodes and a laser output aperture. The laser die is mounted in the trench and is configured to emit a laser beam. The first electrode is coupled to the electrically conductive layer and the laser output aperture is mechanically aligned with a waveguide that extends from the second wall. The interconnects are formed on the second electrode of the laser die and on selected locations on the surface of the optoelectronic die. The interconnects are coupled to a substrate, and are configured to conduct electrical signals between the optoelectronic die and the substrate.