A laser ignition assembly comprises first and second mounting surfaces opposed to each other. A central cavity is formed through the surfaces and sized to receive energetic material therein. A vertical solder bridge is formed between the surfaces and an edge emitting laser diode disposed between the surfaces. The laser diode is oriented such that a light fluence therefrom is directed in a radial direction into the central cavity. The surfaces can be circuit boards, e.g., copper clad, rigid circuit boards, and have an annular shape. The central cavity can be further defined by an interboard gap between the surfaces. The ignition assembly can fit within a primer cup of a munition.

A laser ignition assembly comprises first and second mounting surfaces opposed to each other. A central cavity is formed through the surfaces and sized to receive energetic material therein. A vertical solder bridge is formed between the surfaces and an edge emitting laser diode disposed between the surfaces. The laser diode is oriented such that a light fluence therefrom is directed in a radial direction into the central cavity. The surfaces can be circuit boards, e.g., copper clad, rigid circuit boards, and have an annular shape. The central cavity can be further defined by an interboard gap between the surfaces. The ignition assembly can fit within a primer cup of a munition.

The present disclosure discloses an optical module including a circuit board and a light-emitting assembly. In the light-emitting assembly, a wavelength tuning mechanism is formed of a semiconductor optical amplification chip, a silicon optical chip and a semiconductor refrigerator. The semiconductor optical amplification chip may provide a plurality of wavelengths, and a wavelength selection is carried out by an optical filter in the silicon optical chip; a temperature adjustment for the optical filter is achieved by the semiconductor refrigerator, so as to further adjust a performance of the filter for wavelength selection. The above device is provided in a housing to facilitate packaging of the devices.

The present disclosure discloses an optical module including a circuit board and a light-emitting assembly. In the light-emitting assembly, a wavelength tuning mechanism is formed of a semiconductor optical amplification chip, a silicon optical chip and a semiconductor refrigerator. The semiconductor optical amplification chip may provide a plurality of wavelengths, and a wavelength selection is carried out by an optical filter in the silicon optical chip; a temperature adjustment for the optical filter is achieved by the semiconductor refrigerator, so as to further adjust a performance of the filter for wavelength selection. The above device is provided in a housing to facilitate packaging of the devices.

Embodiments of the present disclosure generally relate to a vertical cavity surface emitting laser, a head gimbal assembly for mounting a vertical cavity surface emitting laser, and devices incorporating such articles. In an embodiment, a vertical cavity surface emitting laser (VCSEL) device is provided. The VCSEL device includes a chip for mounting on a slider and two laser diode electrodes. The chip has six surfaces, wherein a first surface of the chip is for facing the slider, a second surface of the chip is opposite the first surface, and the two laser diode electrodes are positioned in any combination on one or more of a third surface, a fourth surface, a fifth surface, or a sixth surface of the chip.

An optical assembly includes a substrate; an optical subassembly that is disposed on a region of a surface of the substrate; a housing that is disposed on another region of the surface of the substrate; a first optical element that is disposed on a first support component of the housing; and a second optical element that is disposed on a second support component of the housing. The optical subassembly includes an integrated circuit (IC) driver chip; a redistribution layer (RDL) structure that is disposed on a surface of the IC driver chip, wherein the RDL structure includes a cavity; and a vertical cavity surface emitting laser (VCSEL) device disposed on a region of the surface of the RDL structure that is within the cavity of the RDL structure.

An optical assembly includes a substrate; an optical subassembly that is disposed on a region of a surface of the substrate; a housing that is disposed on another region of the surface of the substrate; a first optical element that is disposed on a first support component of the housing; and a second optical element that is disposed on a second support component of the housing. The optical subassembly includes an integrated circuit (IC) driver chip; a redistribution layer (RDL) structure that is disposed on a surface of the IC driver chip, wherein the RDL structure includes a cavity; and a vertical cavity surface emitting laser (VCSEL) device disposed on a region of the surface of the RDL structure that is within the cavity of the RDL structure.

A semiconductor device includes a substrate, an epitaxial stack disposed on the substrate, a first connection layer between the epitaxial stack and the substrate and a first electrode disposed on the first connection layer. The substrate has a first side surface and a second side surface. The epitaxial stack has a semiconductor structure with a first lateral surface adjacent to the first side surface and a second lateral surface opposing the first lateral surface and adjacent to the second side surface. The first connection layer has a first protruding portion extending beyond the first lateral surface and a second protruding portion extending beyond the second lateral surface. The first electrode is in contact with the first protruding portion and the second protruding portion.

A semiconductor device includes a substrate, an epitaxial stack disposed on the substrate, a first connection layer between the epitaxial stack and the substrate and a first electrode disposed on the first connection layer. The substrate has a first side surface and a second side surface. The epitaxial stack has a semiconductor structure with a first lateral surface adjacent to the first side surface and a second lateral surface opposing the first lateral surface and adjacent to the second side surface. The first connection layer has a first protruding portion extending beyond the first lateral surface and a second protruding portion extending beyond the second lateral surface. The first electrode is in contact with the first protruding portion and the second protruding portion.

A semiconductor laser module includes: an optical fiber that outputs a first laser beam to an exterior of the semiconductor laser module; semiconductor laser devices each including an emission portion that emits a second laser beam, an electrically conductive portion that supplies electric power to the emission portion, and a mount on which the emission portion and the electrically conductive portion are disposed; a mount base including mount surfaces that form steps; and an optical system that optically couples the second laser beams from the emission portions to an incident end face of the optical fiber. The mounts of the semiconductor laser devices are disposed on the mount surfaces. The semiconductor laser devices include an upper semiconductor laser device and a lower semiconductor laser device adjacent to each other in a step direction of the mount base.