An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.

A reflector for optical devices is disclosed. The reflector includes a distributed Bragg reflector and a metal reflector. The metal reflector is contained within one or more apertures defined by a material having good adliesion to a semiconductor material. A method for bonding the resulting structure to a heat spreader is also disclosed.

In various embodiments, laser systems feature beam emitters thermally coupled to heat sinks comprising, consisting essentially of, or consisting of a metal-matrix composite of a thermally conductive metal and a refractory metal. At least a portion of the surface of the heat sink is treated to form a depleted region, and a diamond coating is deposited within and/or over the depleted region. The depleted region is substantially free of the thermally conductive metal or contains the thermally conductive metal at a concentration less than that of the body of the heat sink.

A semiconductor light emitting device includes a mount section having an insulating property connected to a heat sink, a plurality of semiconductor laser elements disposed on the mount section, and a heat radiation block having an insulating property disposed on the plurality of semiconductor laser elements. A first wiring made of a metal is disposed on an upper surface of the mount section, and a second wiring made of a metal is disposed on a lower surface of the heat radiation block, a part of the second wiring being electrically connected to the first wiring. By electrically connecting the first wiring and the second wiring to each of the plurality of semiconductor laser elements, the plurality of semiconductor laser elements are connected in series, and have a same polarity with each other at a side that each of the plurality of semiconductor laser elements is connected to the first wiring.

A heat sink comprising a heat spreader (2) made from synthetic diamond and having a front surface for mounting one or more components to be cooled like a laser disc (8) and a rear surface for direct fluid cooling (10). A plurality of ribs (4,7) is bonded to the rear surface of the heat spreader (2) to stiffen the heat spreader. Both the heat spreader and the plurality of ribs are formed of synthetic diamond material. The ribs (4,7) may be fixed to the heat spreader by braze bonds (6).

An optical transmitter module includes optical semiconductor devices including a first optical semiconductor device, a temperature adjustment means for collectively performing temperature adjustment on the optical semiconductor devices, and a first thermal resistor that is disposed between the first optical semiconductor device and the temperature adjustment means, in which, when the temperature adjustment means is driven, the temperature of the first optical semiconductor device is higher than temperatures of other optical semiconductor devices which are different from the first optical semiconductor device.

In various embodiments, laser systems feature beam emitters thermally coupled to heat sinks comprising, consisting essentially of, or consisting of a metal-matrix composite of a thermally conductive metal and a refractory metal. At least a portion of the surface of the heat sink is treated to form a depleted region, and a diamond coating is deposited within and/or over the depleted region. The depleted region is substantially free of the thermally conductive metal or contains the thermally conductive metal at a concentration less than that of the body of the heat sink.

A semiconductor light emitting device includes a mount section having an insulating property connected to a heat sink, a plurality of semiconductor laser elements disposed on the mount section, and a heat radiation block having an insulating property disposed on the plurality of semiconductor laser elements. A first wiring made of a metal is disposed on an upper surface of the mount section, and a second wiring made of a metal is disposed on a lower surface of the heat radiation block, a part of the second wiring being electrically connected to the first wiring. By electrically connecting the first wiring and the second wiring to each of the plurality of semiconductor laser elements, the plurality of semiconductor laser elements are connected in series, and have a same polarity with each other at a side that each of the plurality of semiconductor laser elements is connected to the first wiring.

Semiconductor light-emitting apparatus includes substrate, submount above substrate, and semiconductor laser above submount. Semiconductor laser and submount are bonded to each other with first bonding material. Substrate and submount are bonded to each other with second bonding material. Submount has first region and second region near substrate, first region being a region on which spacer is disposed, and second region being a region without spacer. Submount is bonded to substrate by covering at least a portion of second region with second bonding material.

A diode laser arrangement has a diode laser device and at least one cooling device. The at least one cooling device is arranged on the diode laser device. The at least one cooling device is configured to cool the diode laser device. The at least one cooling device has a contact body and at least one heat conducting insert. The contact body contains a first material or consisting of a first material, and the at least one heat conducting insert has a second material, which is different from the first material, or consisting of a second material, which is different from the first material, and the contact body is arranged on the diode laser device. The at least one heat conducting insert is embedded in the contact body.