An optical apparatus comprising at least two optoelectronic devices fabricated on the same substrate and in thermal communication with each other. A first optoelectronic device is configured to generate optical signals and provide them to an optical system via an optical output port. A second optoelectronic device is configured to provide heat compensation for the first optoelectronic device. An electrical circuitry provides first electrical signals to the first optoelectronic device and second electrical signals to the second optoelectronic device. The electrical circuitry is configured to adjust at least the second electrical signals to controllably adjust a temperature of the first optoelectronic device.

An optical apparatus comprising at least two optoelectronic devices fabricated on the same substrate and in thermal communication with each other. A first optoelectronic device is configured to generate optical signals and provide them to an optical system via an optical output port. A second optoelectronic device is configured to provide heat compensation for the first optoelectronic device. An electrical circuitry provides first electrical signals to the first optoelectronic device and second electrical signals to the second optoelectronic device. The electrical circuitry is configured to adjust at least the second electrical signals to controllably adjust a temperature of the first optoelectronic device.

The disclosure relates in some aspects to providing miniature power-efficient agile photonic generators of microwave waveforms. Illustrative examples use chip lasers integrated in close thermal proximity with one another to provide a miniature microwave arbitrary waveform generator (AWG). Due to the small size of the lasers and the close integration, common ambient fluctuations from the environment or other sources can be efficiently reduced, yielding improved spectral purity of generated radio-frequency (RF) signals. Tight physical integration also permits a small device footprint with minimal acceleration sensitivity. The lasers may be locked to cavities or other resonators to allow efficient decoupling of the frequency and amplitude modulation of the lasers to provide flexibility to the waveform generator. Exemplary devices described herein can produce frequency chirped signals for radar applications. The frequency chirp may be linear and/or nonlinear. Tuning methods are also described herein.

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The quantum well active layer is doped with 0.3 to 1×10.sup.18/cm.sup.3 of n-type impurity.

Methods, devices, and systems for double-sided cooling of laser diodes are provided. In one aspect, a laser diode assembly includes a first heat sink, a plurality of submounts spaced apart from one another on the first heat sink, a plurality of laser diodes, and a second heat sink on top sides of the plurality of laser diodes. Each laser diode includes a corresponding active layer between a first-type doped semiconductor layer and a second-type doped semiconductor layer. A bottom side of each laser diode is positioned on a different corresponding submount of the plurality of submounts. The plurality of laser diode are electrically connected in series.

Integrated laser sources emitting multi-wavelengths of light with reduced thermal transients and crosstalk and methods for operating thereof are disclosed. The integrated laser sources can include one or more heaters and a temperature control system to maintain a total thermal load of the gain segment, the heater(s), or both of a given laser to be within a range based on a predetermined target value. The system can include electrical circuitry configured to distribute current to the gain segment, the heater(s), or both. The heater(s) can be located proximate to the gain segment, and the distribution of current can be based on the relative locations. In some examples, the central laser can be heated prior to being activated. In some examples, one or more of the plurality of lasers can operate in a subthreshold operation mode when the laser is not lasing to minimize thermal perturbations to proximate lasers.

A cooling device (1) for cooling an electrical component (4), in particular a laser diode, including a base body (2) with at least one outer face (20) and at least one integrated cooling channel (5), in particular a micro-cooling channel, a connecting surface (21) on the outer face (20) of the base body (2) for connecting the electrical component (4) to the base body (2) and a first stabilising layer (11),
wherein the first stabilising layer (11) and the connecting surface (21) are arranged at least partially one above the other along a primary direction (P), and
wherein the first stabilising layer (11) is offset relative to the outer face (20) towards the interior of the base body (2) by a distance (A) along a direction parallel to the primary direction (P).

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

This application relates to a laser assembly displaying self-heating mitigation. The laser assembly comprises a semiconductor laser and a drive unit for driving the semiconductor laser. The semiconductor laser includes a first semiconductor region for generating or modulating an optical signal in response to a first drive current that is applied to the first semiconductor region, and a heating region that is arranged in proximity to the first semiconductor region and electrically insulated from the first semiconductor region. The drive unit is configured to generate the first drive current and a second drive current, apply the first drive current to the first semiconductor region during respective transmission periods of the semiconductor laser, and apply the second drive current to the heating region in intervals between successive transmission periods.

An optical component includes a support member having a through-hole, a second light-transmissive member disposed inside the through-hole, and having a light incidence face, a light emission face, and an outer peripheral side surface, and at least one functional film selected from a group consisting of a short pass filter, a long pass filter, and a heat dissipation member and disposed on a surface of the second light-transmissive member.