Provided is a nitride semiconductor laser element which includes: a stacked structure including a plurality of semiconductor layers including a light emitting layer, the stacked structure including a pair of resonator end faces located on opposite ends; and a protective film including a dielectric body and disposed on at least one of the pair of resonator end faces. The protective film includes a first protective film (a first emission surface protective film), a second protective film (a second emission surface protective film), and a third protective film (a third emission surface protective film) disposed in stated order above the stacked structure. The first protective film is amorphous, the second protective film is crystalline, and the third protective film is amorphous.

Provided is a nitride semiconductor laser element which includes: a stacked structure including a plurality of semiconductor layers including a light emitting layer, the stacked structure including a pair of resonator end faces located on opposite ends; and a protective film including a dielectric body and disposed on at least one of the pair of resonator end faces. The protective film includes a first protective film (a first emission surface protective film), a second protective film (a second emission surface protective film), and a third protective film (a third emission surface protective film) disposed in stated order above the stacked structure. The first protective film is amorphous, the second protective film is crystalline, and the third protective film is amorphous.

A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a first resonator and a second resonator, the first and second resonators having parallel resonator directions along a longitudinal direction and being monolithically integrated into the semiconductor laser diode, wherein the first resonator includes at least a part of a semiconductor layer sequence having an active layer and an active region configured to be electrically pumped to generate a first light, wherein the longitudinal direction is parallel to a main extension plane of the active layer, and wherein the second resonator has an active region with a laser-active material configured to be optically pumped by at least a part of the first light to produce a second light which is partially emitted outwards from the second resonator.

An injection locking laser source is provided for an optical communications system. The injection locking laser source includes a laser cavity configured to receive an externally injected low linewidth primary light source. The laser cavity includes a cavity length, a cavity facet reflectivity, and a cavity quality factor. The injection locking laser source further includes an emitting region configured to output a secondary light source injection locked to the externally injected low linewidth primary light source at a stable detuning frequency based on a photon number, a steady-state phase, and a carrier number of the primary light source injected into the cavity.

A semiconductor laser element includes: an n-type cladding layer disposed above an n-type semiconductor substrate (a chip-like substrate); an active layer disposed above the n-type cladding layer; and a p-type cladding layer disposed above the active layer, in which the active layer includes a well layer and a barrier layer, an energy band gap of the barrier layer is larger than an energy band gap of the n-type cladding layer, and a refractive index of the barrier layer is higher than a refractive index of the n-type cladding layer.

A semiconductor optical device may include a semiconductor substrate; a mesa stripe structure that extends in a stripe shape in a first direction on the semiconductor substrate and includes a contact layer on a top layer; an adjacent layer on the semiconductor substrate and adjacent to the mesa stripe structure in a second direction orthogonal to the first direction; a passivation film that covers at least a part of the adjacent layer; a resin layer on the passivation film; an electrode that is electrically connected to the contact layer and extends continuously from the contact layer to the resin layer; and an inorganic insulating film that extends continuously from the resin layer to the passivation film under the electrode, is spaced apart from the mesa stripe structure, and is completely interposed between the electrode and the resin layer.

Provided is an electronic device capable of reducing the possibility of malfunction. An electronic device is provided with: a first substrate including a drive circuit; a second substrate including a light-emitting unit driven by the drive circuit and mounted on one surface side of the first substrate; and a light-shielding unit provided on the first substrate and configured to shield at least a part of the drive circuit from light emitted by the light-emitting unit.

Provided is an electronic device capable of reducing the possibility of malfunction. An electronic device is provided with: a first substrate including a drive circuit; a second substrate including a light-emitting unit driven by the drive circuit and mounted on one surface side of the first substrate; and a light-shielding unit provided on the first substrate and configured to shield at least a part of the drive circuit from light emitted by the light-emitting unit.

A plurality of laser diode bars and a plurality of dummy bars are alternately arranged on projections provided on an upper surface of a plate so that an opening of the plate is sandwiched between the projections. The plurality of laser diode bars and the plurality of dummy bars are arranged with the projections as reference positions. End surfaces of the plurality of laser diode bars are protruded upward relative to the plurality of dummy bars. Next, an insulation film is formed on protruding portions of the plurality of laser diode bars relative to the plurality of dummy bars.

A plurality of laser diode bars and a plurality of dummy bars are alternately arranged on projections provided on an upper surface of a plate so that an opening of the plate is sandwiched between the projections. The plurality of laser diode bars and the plurality of dummy bars are arranged with the projections as reference positions. End surfaces of the plurality of laser diode bars are protruded upward relative to the plurality of dummy bars. Next, an insulation film is formed on protruding portions of the plurality of laser diode bars relative to the plurality of dummy bars.