A MEMS tunable VCSEL includes a membrane device having a mirror and a distal-side electrostatic cavity for displacing the mirror to increase a size of an optical cavity. A VCSEL device includes an active region for amplifying light. Then, one or more proximal-side electrostatic cavities are defined between the VCSEL device and the membrane device and used to displace the mirror to decrease a size of an optical cavity.

A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a first resonator and a second resonator, the first and second resonators having parallel resonator directions along a longitudinal direction and being monolithically integrated into the semiconductor laser diode, wherein the first resonator includes at least a part of a semiconductor layer sequence having an active layer and an active region configured to be electrically pumped to generate a first light, wherein the longitudinal direction is parallel to a main extension plane of the active layer, and wherein the second resonator has an active region with a laser-active material configured to be optically pumped by at least a part of the first light to produce a second light which is partially emitted outwards from the second resonator.

A laser source includes a topological cavity for nonreciprocal lasing, a magnetic material and an optical waveguide. The magnetic material is arranged to interact with the topological cavity. The optical waveguide is arranged to receive light extracted from the topological cavity upon breaking of time-reversal symmetry in the topological cavity.

A high-efficiency laser pumping device is provided, wherein a dielectric with or without a tapered aperture is used to accept, guide, and concentrate a pump light toward a laser gain material. Preferably, the dielectric is also a heat insulator between the pump-light source and the laser gain material. The pump-light source includes an array of light-emitting diodes, or an array of laser diodes, or an array of mixed light-emitting-diodes and laser diodes. Preferably, the input and output faces of the dielectric are optically coated with dielectric layers to maximize the pump brightness toward the laser gain material. A high-efficiency laser-pumping system with active cooling apparatus is further provided, wherein a plural number of the optical-guiding and thermal-insulation dielectrics are arranged to receive the pump lights from a plural number of pump-light sources, configured to concentrate all the pump light toward a laser gain material.

The present disclosure discloses a miniaturized MOPA structure DPSSL (Diode Pumped Solid State Laser), which comprises a laser oscillator module and a laser amplifier module. The laser oscillator module consists of a seed laser and its collimating system, and the laser amplifier module consists of a laser pump module and a laser gain element. The seed laser with high beam quality is collimated by collimation system, then input into the gain element; the pump laser is pumped into the gain element via end pump or side pump mode. The seed laser beam transmits into the gain medium and is reflected by the interface several times with the “Zigzag” path, which makes the seed laser fully gained and amplified, finally achieving high power and high beam quality laser output.

In this present disclosure, the laser gain material is doped with different rare-earth ion concentrations and processed into different shapes. Some polishing surfaces of the gain material are deposited with different coatings including HR coating and AR coating, on the one hand, to improve the absorption efficiency of the pump laser, on the other hand, to make the seeds laser in the gain element achieve longer transmission distance by Zigzag transmission path, so that the energy in the gain medium can be fully extracted. And finally, achieve high power laser output.

The present disclosure can adopt the host material doped at least at the same time with Er and Yb elements as the laser gain medium, adopt high-quality 1.55-micron or other medium emission peak band seed laser source as well as end or side pump mode, and can realize the laser output with high power and high beam quality.

Compared with the MOPA laser of the prior art, the present disclosure has the advantages of simple structure, small volume, and low cost.

The invention relates to a laser light source (10), comprising an arrangement (120) of surface-emitting semiconductor lasers (1251, 1252, . . . 125n) to which a voltage is applied such that an operating current is below the threshold current and an intrinsic emission of the surface-emitting semiconductor laser is prevented. The laser light source also comprises a first semiconductor laser (100) which emits radiation (110) that enters the surface-emitting semiconductor laser such that induced emission takes place via the injection locking mechanism and the individual surface-emitting semiconductor lasers emit laser light having the same wavelength and polarisation direction as the irradiated radiation (110). The emission frequency of the first semiconductor laser can be changed by changing the operating current.

A MEMS tunable VCSEL includes a membrane device having a mirror and a distal-side electrostatic cavity for displacing the mirror to increase a size of an optical cavity. A VCSEL device includes an active region for amplifying light. Then, one or more proximal-side electrostatic cavities are defined between the VCSEL device and the membrane device and used to displace the mirror to decrease a size of an optical cavity.

The invention relates to a method for generating a laser pulse, wherein during the method a first semi-conductor laser in the form of a broadband laser diode is used to generate a pump laser pulse, the pump laser pulse is used to pump a second semi-conductor laser, the laser pulse being shorter than the pump laser pulse and the second semi-conductor laser comprising at least 20 quantum wells arranged above one another in the emission direction of the laser pulse.

A compact laser source and a single sideband modulator used therein is disclosed. The compact laser source includes a seed laser and one or more channels, with each channel generating one or more output laser beams having corresponding different wavelengths. The compact laser source can be formed in whole or in part on a single optical motherboard to thereby minimize space and power requirements. By employing the disclosed single sideband modulator, harmonics in the generated output laser beams can be minimized. The compact laser source finds application in an atom interferometer (AI) system, which may be used to measure gravity, acceleration, or rotation of the AI system.

Disclosed are an element comprising a substrate and at least two different optoelectronic devices, wherein the at least two different optoelectronic devices are monolithically fabricated on the substrate; and a method for producing the same. Also disclosed is an organic semiconductor laser diode comprising a substrate, an insulating grating, a first electrode, an organic layer and a second electrode in this order.