A configurable optical driver circuit includes an adjustable current source circuit configurable to drive one of a variety of different types of electrical to optical devices, an adjustable back-termination resistance circuit configurable to provide a back-termination resistance to the one of a variety of different electrical to optical devices, and a programmable memory configured to provide configuration information to the adjustable current source circuit and to the adjustable back-termination resistance circuit to configure the adjustable current source circuit and the adjustable back-termination resistance circuit for operation with the one of a variety of different electrical to optical devices.

This optical semiconductor element includes: a substrate; a first ridge formed on the substrate and having a first first-conductivity-type cladding layer, a first core layer, a first second-conductivity-type cladding layer, and a first contact layer in this order from a lower side, with first ridge grooves provided on both lateral sides of the first ridge; and a first electrode formed in contact with the first contact layer, on the first ridge, without spreading to the first ridge grooves, the first electrode including a first solder layer.

A semiconductor device includes an electrode which is arranged on an organic material with an insulation film interposed therebetween and which does not easily peel away from the organic material along with the insulation film. An insulation film in a region including pad portions of a phase shift electrode and a modulation electrode has openings at the centers of the pad portions of the phase shift electrode and the modulation electrode, the edge portions of which are formed on the phase shift electrode and the modulation electrode. In this way, the adjoining edges of the phase shift electrode and modulation electrode and the insulation film are all covered by the insulation film so as not to be exposed to the atmosphere. By covering the cracks that occur in the insulation film in the production process with the insulation film made of SiO.sub.2, SiN.sub.X, SiON.sub.X or the like, an organic solvent such as acetone or ethanol used in the process can be prevented from seeping in between the insulation film and the organic material through the cracks in the insulation film.

This application relates to a laser assembly displaying self-heating mitigation. The laser assembly comprises a semiconductor laser and a drive unit for driving the semiconductor laser. The semiconductor laser includes a first semiconductor region for generating or modulating an optical signal in response to a first drive current that is applied to the first semiconductor region, and a heating region that is arranged in proximity to the first semiconductor region and electrically insulated from the first semiconductor region. The drive unit is configured to generate the first drive current and a second drive current, apply the first drive current to the first semiconductor region during respective transmission periods of the semiconductor laser, and apply the second drive current to the heating region in intervals between successive transmission periods.

Disclosed herein is a method of optical pulse emission including three phases. During a first phase, a capacitor is charged from a supply voltage node. During a second phase, a voltage stored on the capacitor is boosted, and then the capacitor is at least partially discharged through a light emitting device. During a third phase, the capacitor is further discharged by bypassing the light emitting device. The third phase may begin prior to an end of the second phase.

A laser apparatus includes: a light source configured to generate laser light; and an optical negative feedback unit configured to narrow a spectral line of the laser light using optical negative feedback. A modulation signal is input to the light source to modulate a frequency of the laser light. A modulation amount in the frequency of the laser light is detected. A modulation sensitivity is calculated from (i) the modulation amount and (ii) an intensity of the modulation signal.

A laser device for use with a display including a plurality of pixels is disclosed. The laser device includes a gain section and a modulator. The gain section is electrically coupled with a first current or voltage source. The gain section is configured to selectively amplify an optical power of light reflecting within the gain section based on a first drive current or voltage supplied from the first current or voltage source to the gain section. The modulator is optically coupled with the gain section. The modulator is electrically coupled with a second current or voltage source. The modulator is configured to selectively attenuate or amplify an optical power of light received from the gain section based on a second drive current or voltage supplied from the second current or voltage source to the modulator. Light emitted from the modulator is provided to the display.

A controller stabilizes a distributed feedback plus reflection (DFB+R) laser, which has a back facet, a DFB section, a passive section, and a front facet with a low reflective element. An etalon filter is formed by a portion of the DFB section, the passive section, and the low reflective element. Control circuitry directly modulates the DFB section with a modulation signal and biases the passive section with a bias signal. In operation, a lasing mode of the DFB section is aligned to a long wavelength edge of one of the periodic peaks of a reflection profile of the etalon filter. Meanwhile, photodiodes are arranged to monitor the output power emitted from the laser's front and back facets. The control circuitry monitors a ratio of the detected output power and adjusts the bias based on the monitored ratio.

A semiconductor laser drive circuit includes: an anode electrode divided into at least one gain region and at least one light absorption region; a cathode electrode shared between the gain region and the light absorption region; and a resistance connected to the anode electrode of the light absorption region.

A method (900) includes delivering a first bias current (I.sub.GAIN) to an anode of gain-section diode (590a) and delivering a second bias current (I.sub.PH) to an anode of a phase-section diode (590b). The method also includes receiving a burst mode signal (514) indicative of a burst-on state or a burst-on state, and sinking a first sink current (I.sub.SINK) away from the first bias current when the burst mode signal is indicative of the burst-off state. When the burst mode signal transitions to be indicative of the burst-on state from the burst-off state, the method also includes sinking a second sink current away from the second bias current at the anode of the phase-section diode and ceasing the sinking of the first sink current away from the first bias current at the anode of the gain section diode.