The disclosure relates in some aspects to providing miniature power-efficient agile photonic generators of microwave waveforms. Illustrative examples use chip lasers integrated in close thermal proximity with one another to provide a miniature microwave arbitrary waveform generator (AWG). Due to the small size of the lasers and the close integration, common ambient fluctuations from the environment or other sources can be efficiently reduced, yielding improved spectral purity of generated radio-frequency (RF) signals. Tight physical integration also permits a small device footprint with minimal acceleration sensitivity. The lasers may be locked to cavities or other resonators to allow efficient decoupling of the frequency and amplitude modulation of the lasers to provide flexibility to the waveform generator. Exemplary devices described herein can produce frequency chirped signals for radar applications. The frequency chirp may be linear and/or nonlinear. Tuning methods are also described herein.

A photonic synthesizer includes a multifrequency optical source to produce a signal of interest from a pair of lasers, which may be self-injection locked chip lasers. The signal is referenced to a high frequency clock using a photonic mixer/divider based on an electro-optical modulator and a relatively slow photodiode. The electro-optical modulator produces optical harmonics from the beams from the pair of lasers, where one harmonic from the first laser beam and one harmonic from the second laser beam beat on the photodiode. A phase locked control signal is generated for controlling the output frequency of one or both of the two lasers. The output signal of the photonic synthesizer is generated using a relatively fast photodiode based on a difference in frequencies of the pair of lasers. The output signal may be a millimeter wave-band signal. The photonic synthesizer can be formed as a photonic integrated circuit (PIC).

Embodiments of the present disclosure include optical transmitters and transceivers with improved reliability. In some embodiments, the optical transmitters are used in network devices, such as in conjunction with a network switch. In one embodiment, lasers are operated at low power to improve reliability and power consumption. The output of the laser may be modulated by a non-direct modulator and received by integrated optical components, such as a modulator and/or multiplexer. The output of the optical components may be amplified by a semiconductor optical amplifier (SOA). Various advantageous configurations of lasers, optical components, and SOAs are disclosed. In some embodiments, SOAs are configured as part of a pluggable optical communication module, for example.

An injection locking laser source is provided for an optical communications system. The injection locking laser source includes a laser cavity configured to receive an externally injected low linewidth primary light source. The laser cavity includes a cavity length, a cavity facet reflectivity, and a cavity quality factor. The injection locking laser source further includes an emitting region configured to output a secondary light source injection locked to the externally injected low linewidth primary light source at a stable detuning frequency based on a photon number, a steady-state phase, and a carrier number of the primary light source injected into the cavity.

A light emitting device includes a first active layer on a substrate, a current spreading length, and a plurality of mesa regions on the first active layer. At least a first portion of the first active layer can comprise a first electrical polarity. Each mesa region can include, at least a second portion of the first active layer, a light emitting region on the second portion of the first active layer with a dimension parallel to the substrate smaller than twice the current spreading length, and a second active layer on the light emitting region. The light emitting region can be configured to emit light with a target wavelength from 200 nm to 300 nm. At least a portion of the second active layer can comprise a second electrical polarity.

A light-emitting device includes an optical amplifier and gives off output light from optical amplifier by making a plurality of seed light rays, having mutually different wavelengths, incident on optical amplifier. Optical amplifier includes a medium portion containing a wavelength-converting element. Optical amplifier has wavelength-converting element thereof excited by excitation light to produce a plurality of partially coherent light rays, of which wavelengths are respectively the same as the mutually different wavelengths of plurality of seed light rays, thereby giving off, as output light, a multi-wavelength light beam. Excitation light has a shorter wavelength than any of plurality of seed light rays and is incident on the medium portion. Multi-wavelength light beam includes a plurality of light rays amplified. Plurality of light rays amplified have wavelengths, which are respectively the same as mutually different wavelengths of plurality of seed light rays.

Embodiments of the present disclosure include optical transmitters and transceivers with improved reliability. In some embodiments, the optical transmitters are used in network devices, such as in conjunction with a network switch. In one embodiment, lasers are operated at low power to improve reliability and power consumption. The output of the laser may be modulated by a non-direct modulator and received by integrated optical components, such as a modulator and/or multiplexer. The output of the optical components may be amplified by a semiconductor optical amplifier (SOA). Various advantageous configurations of lasers, optical components, and SOAs are disclosed. In some embodiments, SOAs are configured as part of a pluggable optical communication module, for example.

An embodiment semiconductor optical device includes an optical waveguide including a core, and an active layer extending in the waveguide direction of the optical waveguide for a predetermined distance and arranged in a state in which the active layer can be optically coupled to the core. The core and the active layer are arranged in contact with each other. The core is formed of a material with a refractive index of about 1.5 to 2.2, such as SiN, for example. In addition, the core is formed to a thickness at which a higher-order mode appears. The higher-order mode is an E.sub.12 mode, for example.

Laser Side Mode Suppression Ratio (SMSR) control is provided via a logic controller configured to measure an SMSR of a carrier wave upstream of a modulator and measure an Average Optical Power (AOP) of the carrier wave downstream of the modulator; transmit a bias voltage based on the SMSR and the AOP to a laser driver for a laser generating the carrier wave; and transmit an attenuation level based on the SMSR and the AOP to a Variable Optical Attenuator (VOA) upstream of the modulator. In various embodiments the attenuation level and bias voltage can rise or fall together, or one may rise and one may fall to ensure the output optical signal meets specified SMSR and AOP values.

A laser device includes a laser configured to generate laser light and a laser control module configured to receive at least a portion of the laser light generated by the laser, to generate a control signal and to feed the control signal back to the laser for stabilizing the frequency, wherein the laser control module includes a tunable frequency discriminating element which is preferably continuously frequency tunable, and where the laser control module is placed outside the laser cavity.