A MEMS tunable VCSEL includes a membrane device having a mirror and a distal-side electrostatic cavity for displacing the mirror to increase a size of an optical cavity. A VCSEL device includes an active region for amplifying light. Then, one or more proximal-side electrostatic cavities are defined between the VCSEL device and the membrane device and used to displace the mirror to decrease a size of an optical cavity.

Narrow-optical linewidth laser generation devices and methods for generating a narrow-optical linewidth laser beam are provided. One narrow-optical linewidth laser generation devie includes a single-wavelength mirror or multiwavelength mirror (for comb lasers) formed from one or more optical ring resonators coupled with an optical splitter. The optical splitter may in turn be coupled with a quantum dot optical amplifier (QDOA), itself coupled with a phase-tuner. The phase tuner may be further coupled with a broadband mirror. The narrow-optical linewidth laser beam is generated by using a long laser cavity and additionally by using an integrated optical feedback.

A MEMS tunable VCSEL includes a membrane device having a mirror and a distal-side electrostatic cavity for displacing the mirror to increase a size of an optical cavity. A VCSEL device includes an active region for amplifying light. Then, one or more proximal-side electrostatic cavities are defined between the VCSEL device and the membrane device and used to displace the mirror to decrease a size of an optical cavity.

A semiconductor component for emitting light includes a main body that comprises at least one mesa body. The mesa body has an emission region for emitting the light. The emission region is assigned a first mirror portion, a second mirror portion, and an active portion arranged between the two mirror portions and serving to produce the light. The semiconductor component further includes electrical contacts for feeding electrical energy into the active portion, with at least one stress element that is attached to a surface of the main body. The stress element is configured to generate in the main body a material stress which has an effect on one or more polarization properties of the emitted light.

A tunable laser includes a reflective semiconductor optical amplifier (SOA), a grating codirectional coupler, and a reflective microring resonator. The grating codirectional coupler and the reflective microring resonator are both formed on a silicon base. An anti-reflection film is disposed on a first end surface of the reflective SOA, and the first end surface is an end surface, coupled to a first waveguide of the grating codirectional coupler, of the reflective SOA. A second waveguide of the grating codirectional coupler is coupled to the first waveguide, a first grating is disposed on the first waveguide, a second grating disposed opposite to the first grating is disposed on the second waveguide, and the first grating and the second grating constitute a narrow-band pass filter. The second waveguide is connected to the reflective microring resonator.

A light emitting element includes a laminated structure 20 in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are laminated, a first light reflecting layer 41, and a second light reflecting layer 42 having a flat shape, a base surface 90 located on a side of a first surface of the first compound semiconductor layer 21 has a first region 91 (upwardly convex first-A region 91A and first-B region 91B) including a protruding portion protruding in a direction away from the active layer and a second region 92 having a flat surface, the first light reflecting layer 41 is formed at least on the first-A region 91A, a second curve formed by the first-B region 91B and a straight line formed by the second region 92 intersects at an angle exceeding 0°, and the second curve includes at least one kind of figure selected from the group consisting of a combination of a downwardly convex curve, a line segment, and an arbitrary curve.

A laser device includes a laser oscillator configured to emit a laser beam, and an optical unit configured to receive the laser beam and emit the laser beam outside. The optical unit includes: a partially transmissive mirror configured to reflect a part of the laser beam toward the outside and transmit a remaining part of the laser beam; a diffusion plate configured to diffuse the laser beam which has passed through the partially transmissive mirror and deflect the laser beam in a predetermined direction, at a predetermined diffusion angle; and a photodiode configured to receive the laser beam deflected by the diffusion plate, and output an electric signal. The laser device is configured such that deviation of an optical axis of the laser beam is monitored based on the electric signal of the photodiode.

The present invention concerns a tunable Dense Wavelength Division Multiplex (DWDM) intra cavity laser device having a first optical wave guide having a first optical grating section, a second optical wave guide having a second optical grating section, an active gain section spatially separated from the second optical grating section and a phase section, and a DWDM-filter having an intra-cavity ring resonator located between the first optical wave guide and the second optical wave guide for coupling optical waves between the first and second optical wave guides. The tunable laser device is tunable in a discrete manner depending on a length of the ring resonator that is selected such that the free spectral range of the ring resonator matches a predetermined fixed wavelength spacing grid.

An apparatus and method for calculating the frequency of the light.

The invention may be embodied in other forms than those specifically disclosed herein without departing from itMulti-kW-class blue (400-495 nm) fiber-delivered lasers and module configurations. In embodiments, the lasers propagate laser beams having beam parameter products of <5 mm*mrad, which are used in materials processing, welding and pumping a Raman laser. In an embodiment the laser system is an integration of fiber-coupled modules, which are in turn made up of submodules. An embodiment has sub-modules having a plurality of lensed blue semiconductor gain chips with low reflectivity front facets. These are locked in wavelength with a wavelength spread of <1 nm by using volume Bragg gratings in an external cavity configuration. An embodiment has modules having of a plurality of submodules, which are combined through wavelength multiplexing with a bandwidth of <10 nm, followed by polarization beam combining. The output of each module is fiber-coupled into a low NA fiber. In an embodiment a kW-level blue laser system is realized by fiber bundling and combining multiple modules into a single output fiber.